ABB 5SHZ08F6000

VDRM
VRRM
ITGQM
VT0
rT
=
=
=
=
=
6000
6000
800
3.25
6.4
V
V
A
V
Reverse Blocking Integrated
Gate-Commutated Thyristor
5SHZ 08F6000
mΩ
Ω
Doc. No. 5SYA1231-01 Sep. 01
• Optimized for current source inverter (CSI)
• Fast response (tdon < 3 µs, tdoff < 7 µs)
• Precise timing (∆
∆tdoff < 400 ns)
• Direct fiber optic control
• Status feedback
• Cosmic radiation withstand rating
• Very high EMI immunity
Blocking
VDRM
VRRM
IDRM
IRRM
VAC
Repetitive peak off-state voltage
Reverse repetitive peak off-state
voltage
Repetitive peak off-state current
6000 V
6000 V
Reverse repetitive peak off-state
current
Max. AC voltage for 100
FIT failure rate
Mechanical data
≤
50 mA
VD = VDRM
≤
50 mA
VR = VRRM
3600 V
0 ≤ Tjop ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
(see Fig. 8)
min.
12 kN
max.
16 kN
Fm
Mounting force
Dp
Pole-piece diameter
47 mm
±0.1 mm
H
Housing thickness
26 mm
±0.5 mm
m
Weight IGCT
DS
Surface creepage distance
≥
33 mm
Da
Air strike distance
≥
13 mm
l
Length IGCT
250 mm
+0/-0.5 mm
h
Height IGCT
44 mm
±1.0 mm
w
Width IGCT
208 mm
+0/-0.5 mm
1.00 kg
ABB Semiconductors AG reserves the right to change specifications without notice.
5SHZ 08F6000
On-state
(see Fig. 2)
ITAVM
Max. average on-state current
290 A
ITRMS
Max. RMS on-state current
450 A
VT
On-state voltage
VT0
Threshold voltage
rT
Slope resistance
≤
8.40 V
3.25 V
6.4 mΩ
Half sine wave, TC = 85 °C
IT
=
800 A
IT
=
200 - 800 A
Tj
=
Tj = 125 °C
Self commutation (VD > 0 V)
Turn-on switching (see Fig. 3, 10, 11)
di/dtcrit
Max. rate of rise of on-state
current
ton (min)
Min. on-time
tdon
Turn-on delay time
≤
3 µs
VD
=
3000 V
tr
Rise time
≤
1.5 µs
IT
=
800 A
di/dt =
500 A/µs
Eon
Turn-on energy per pulse
≤
0.8 J
RS
=
10 Ω
Lcomm =
6 µH
CS
=
0.1 µF
Tj
=
0…125 °C
1300 A/µs
0…125 °C
10 µs
Tj
=
125 °C
LS
=
350 nH
Tj
=
125 °C
Turn-off switching (see Fig. 4, 6, 10, 11)
ITGQM
Max. contr. turn-off current
800 A
toff (min)
Min. off-time
tf
Fall time
≤
4.0 µs
VD
=
3000 V
tdoff
Turn-off delay time
≤
7.0 µs
ITGQ =
800 A
Eoff
Turn-off energy per pulse
≤
7.2 J
10 µs
RS
=
10 Ω
CS
=
0.1 µF
Tj
= 0…125 °C
VDM ≤ VDRM
Lcomm =
6 µH
LS
=
350 nH
Tj
=
125 °C
Load commutation (VD < 0 V)
Turn-off switching (see Fig. 5, 6, 10, 11)
di/dtcrit
Max. rate of rise of on-state
current
Irr
Reverse recovery current
≤ 750 A
VD
=
-3000 V
Qrr
Reverse recovery charge
≤ 1500 µC
IT
=
800 A
di/dt =
500 A/µs
Err
Turn off energy per pulse
≤
RS
=
10 Ω
Lcomm =
6 µH
CS
=
0.1 µF
1300 A/µs
6.0 J
LS
=
350 nH
VRM ≤ VRRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 3 of 8
5SHZ 08F6000
Gate Unit
Gate Unit
Power supply (see Fig. 7 to 10)
VGDC
Gate Unit supply voltage
PGin
Gate Unit power consumption
X1
Gate Unit power connector
20 ±0.5 VDC
≤
58 W
Without galvanic isolation to power
circuit.
fS = 750 Hz, ITGQ = 400 A, δ = 0.33
Phoenix, Type MSTB 2.5/2-G-5.08 Au Note 1
Optical control input/output (see Fig. 8 to 10)
Pon CS
Optical input power
>
-20 dBm
Poff CS
Optical noise power
<
-45 dBm Valid for 1mm plastic optical fibre
Pon SF
Optical output power
>
-15 dBm (POF)
Poff SF
Optical noise power
<
-50 dBm
tGLITCH
Pulse width threshold
≤ 400 ns
CS
Receiver for command signal
Agilent, Type HFBR-2528 Note 2
SF
Transmitter for status feedback
Agilent, Type HFBR-1528 Note 2
Max. pulse width without response
Visual feedback (see Fig. 8, 9)
LED1 (green)
Power supply voltage ok
"Light" when power supply is within specified rang
LED2 (green)
Gate-cathode interface ok
"Light" when no short circuit, no open and mouning
force is applied.
LED3 (yellow)
Off gated
"Light" when gate-current is flowing
LED4 (red)
Off gated
"Light" when GCT is off
LED5 (red)
Not ready (failure)
(optional)
Note 1: Phoenix Contact, www.phoenixcontact.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 4 of 8
5SHZ 08F6000
Thermal
Tj
Operating junction temperature range
0…125 °C
Tstg
Storage temperature range
-40…60 °C
Tamb
Ambient operational temperature range
RthJC
Thermal resistance junction to case
≤
23 K/kW
Double side cooled
RthCH
Thermal resistance case to heatsink
≤
7.5 K/kW
Double side cooled
0…60 °C
Analytical function for transient thermal
impedance:
4
Z thJC (t) =
å R (1 - e
i
- t /τi
)
i
1
2
3
4
Ri (K/kW)
15.5
3.35
2.92
1.17
τi (s)
0.57
0.087
0.013
0.0035
i=1
ZthJC [K/kW]
Fm = 12...16 kN
Double side cooled
25
20
15
10
5
0
10-3
2
3
4
5 6 7 8
10-2
2
3
4
5 6 7 8
10-1
2
3
4
5 6 7 8
100
2
3
4
5 6 7 8
101
t [s]
Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 5 of 8
5SHZ 08F6000
Eon [J]
1.2
IT [A]
1200
Tj = 125 °C
Tj = 125°C
Tj = 25°C
1000
1.0
800
0.8
600
0.6
400
0.4
200
0.2
VD = 3000V
VD = 2000V
0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0
0
VT [V]
Fig. 2 On-state characteristics.
VD = 1000V
200
400
600
800
1000
IT [A]
Fig. 3 Turn-on energy per pulse
Self commutation (VD > 0 V)
Err [J]
8.0
Eoff [A]
8.0
Tj = 125 °C
Tj = 125 °C
7.0
VD = 3000V
7.0
VD = 3000V
6.0
6.0
VD = 2000V
5.0
5.0
4.0
4.0
VD = 2000V
VD = 1000V
3.0
3.0
2.0
2.0
VD = 1000V
1.0
1.0
0.0
0.0
0
200
400
600
800
Fig. 4 Turn-off energy per pulse
Self commutation (VD > 0 V).
1000
ITGQ [A]
0
200
400
600
800
1000
IT [A]
Fig. 5 Turn-off energy per pulse
Load commutation (VD < 0 V).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 6 of 8
5SHZ 08F6000
ITGQ [A]
PGin [W]
900
80
800
70
Tj = 0..125 °C
V DM ≤ V DRM
700
fs = 1000 Hz
V RM ≤ V RRM
Lcomm = 3...6 µ H
60
Cs = 0.1 µ F
Rs = 5...10 Ω
600
duty cycle δ = 0.33
VD > 0 V
fs = 750 Hz
50
500
40
400
30
300
fs = 250 Hz
20
200
10
100
0
0
0
1000
2000
3000
4000
0
100
VD [V]
Fig. 6 Max. repetitive turn-off current.
200
300
400
ITGQ [A]
Fig. 7 Gate Unit power consumption.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 7 of 8
5SHZ 08F6000
Fig. 8 Device Outline Drawing.
Gate Unit
X1
RB-GCT
Supply (20VDC)
Internal Supply (without galvanic isolation to power circuit)
LED1
LED2
LED3
LED4
LED5
CS
SF
TurnOn
Circuit
Command Signal (Light)
Status Feedback (Light)
Rx
Tx
Logic
Monitoring
TurnOff
Circuit
Anode
Gate
Cathode
Fig. 9 Block diagram RB-IGCT.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 8 of 8
5SHZ 08F6000
Turn-on (VD > 0 V)
Turn-off (VD > 0 V)
di/dt
VDM
VD
0.9 VD
IT
IT
VG
0.8 ITGQ
CS
0.1 VD
CS
tr
VD
0.3 ITGQ
tdon
VG
tf
tdoff
Turn-off (VD < 0 V)
di/dt
IT
VG
Irr
Qrr
VD
Fig. 10General current and voltage waveforms with RB-IGCT specific symbols.
½ Lcomm
LS
DUT1
RS
Ld
CS
+
CDC
LS
DUT2
RS
CS
½ Lcomm
Fig. 11Test circuit.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Doc. No. 5SYA1231-01 Sep. 01