DIODES ZXGD3005E6

A Product Line of
Diodes Incorporated
ZXGD3005E6
ADVANCE INFORMATION
10A (PEAK) GATE DRIVER IN SOT26
Description and Applications
Features and Benefits
The ZXGD3005E6 is a high-speed non-inverting single gate driver
capable of driving up to 10A into a MOSFET or IGBT gate capacitive
load from supply voltages up to 25V. With propagation delay times
down to <10ns and correspondingly rise/fall times of <20ns.
•
This gate driver ensures rapid switching of the MOSFET or IGBT to
minimize power losses and distortion in high current switching
applications. It is ideally suited to act as a voltage buffer between the
typically high output impedances of a controller IC and the effectively
low impedance on the gate of a power MOSFET or IGBT during
switching. Its low input voltage requirement and high current gain
allows high current driving from low voltage controller ICs.
The ZXGD3005E6 has separate source and sink outputs that enables
the turn-on and turn-off times of the MOSFET or IGBT to be
independently controlled. In addition, the wide supply voltage range
allows full enhancement of the MOSFET or IGBT to minimize on-state
losses and permits +15V to -5V gate drive voltage to prevent dV/dt
induced false triggering of IGBTs. The ZXGD3005E6 has been
designed to be inherently rugged to latch-up and shoot-through
issues. The optimized pin-out SOT26 package eases board layout,
enabling reduced parasitic inductance of traces.
VCC
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•
•
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Mechanical Data
Case: SOT26
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.018 grams (approximate)
Source
IN
1
•
•
•
•
•
•
•
Power MOSFET and IGBT Gate Driving in:
•
Synchronous switch-mode power supplies
•
Power Factor Correction (PFC) in power supplies
•
Secondary side synchronous rectification
•
Plasma Display Panel power modules
•
1, 2 and 3-phase motor control circuits
•
Audio switching amplifier power output stages
•
Solar inverters
SOT26
•
•
•
•
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Emitter-follower configuration for ultra-fast switching
•
<10ns propagation delay time
•
<20ns rise/fall time
Non-inverting voltage buffer stage
Wide supply voltage up to 25V to minimize on-losses
10A peak current drive into capacitive loads
Low input current of 1mA to deliver 4A output current
Separate source and sink outputs for independent control of rise
and fall time
Optimized pin-out to ease board layout and minimize parasitic
inductance of traces
Rugged design that avoids latch-up or shoot-through issues
Near - Zero quiescent and output leakage current
“Lead-Free”, RoHS Compliant (Note 1)
“Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Do Not Connect
Sink
GND
Top View
Pin-Out
Top View
Pin Name
Pin Function
VCC
Driver supply
IN
Driver input pin
GND
Ground
SOURCE
Source current output
SINK
Sink current output
Ordering Information (Note 3)
Product
ZXGD3005E6TA
Notes:
Marking
3005
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
3005
ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
3005 = Product Type Marking Code
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Typical Application Circuit
VS
VCC
VCC
Controller IC
ADVANCE INFORMATION
ZXGD3005E6
SOURCE RSOURCE
IN
ZXGD3005
SINK
RSINK
GND
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Supply voltage
Input voltage
Peak output current
Input current
Symbol
VCC
VIN
IPK
IIN
Value
25
25
±10
±100
Unit
V
V
A
mA
Value
1.1
8.8
113
105
-55 to +150
Unit
W
mW/°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Notes 4 & 5)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 4 & 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
RθJL
TJ, TSTG
°C/W
°C
4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (GND) connected separately to each half.
5. For device with two active die running at equal power.
6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (GND).
ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
ADVANCE INFORMATION
ZXGD3005E6
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Output voltage, high
Output voltage, low
Source output leakage current (Quiescent supply)
Sink output leakage current
Source current
Sink current
Symbol
BVOH
BVOL
IL(source)
IL(sink)
I(source)
I(sink)
Source current
with varying input resistances
I(source)
Sink current
with varying input resistances
I(sink)
td(rise)
tr
td(fall)
tf
td(rise)
tr
td(fall)
tf
td(rise)
tr
td(fall)
tf
Switching times
with low input resistance
Switching times
with high input resistance
Switching times
with asymmetric source and sink resistance
Min
-
Typ
VCC - 0.79
0.78
4.0
3.8
Max
50
50
-
Unit
-
6.4
5.5
3.9
2.2
0.44
-
A
-
7.7
6.5
4.4
2.3
0.46
-
A
-
8
48
16
35
-
ns
-
46
419
47
467
-
ns
Test Condition
ISOURCE = 1μA
ISINK = 1μA
VCC= 25V, VIN = 0V
VCC= 25V,VIN = VCC
VCC= 5V, IIN= 1mA, VOUT= 0V
VCC= 5V, IIN=-1mA, VOUT= 5V
CL = 100nF
RIN = 200Ω
RL = 0.18Ω
RIN = 1kΩ
VCC = 15V
RIN = 10 kΩ
VIN = 15V
RIN = 100 kΩ
RSOURCE = 0 Ω
RIN = 1000 kΩ
RSINK = 0 Ω
CL = 100nF
RIN = 200Ω
RL = 0.18Ω
RIN = 1 kΩ
VCC = 15V
RIN = 10 kΩ
VIN = 15V
RIN = 100 kΩ
RSOURCE = 0 Ω
RIN = 1000 kΩ
RSINK = 0 Ω
RIN = 1kΩ, CL = 10nF
RL = 0.18Ω, VCC = 15V
VIN = 15V,
RSOURCE = 0 Ω, RSINK = 0 Ω
RIN = 1kΩ, CL = 100nF
RL = 0.18Ω, VCC = 15V
VIN = 15V,
RSOURCE = 0 Ω, RSINK = 0 Ω
RIN= 1kΩ CL = 10nF
RL = 0.18Ω, VCC = 15V
VEE = -5V, VIN =-5V to 15V
RSOURCE=4.7Ω, RSINK=0Ω
V
nA
A
24
133
16
37
ns
Switching Test Circuit and Timing Diagram
VCC
90%
VCC
VIN
RIN
50Ω
SOURCE
IN
ZXGD3005
V
RSOURCE
10%
SINK
td(fall)
td(rise)
RSINK
50Ω
VIN
VOUT
CL
90%
GND
RL
90%
VOUT
10%
10%
tr
ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
3 of 7
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tf
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Typical Gate Driver Switching Characteristics
T A = 25°C
15
VOUT
VIN
5
CL = 10nF
RL = 0.18Ω
Voltage (V)
Voltage (V)
RIN = 1kΩ
10
T A = 25°C
15
VCC= 15V
VIN = 15V
VCC= 15V
VIN = 15V
RIN = 1kΩ
10
CL = 100nF
VIN
VOUT
RL = 0.18Ω
5
0
0
0
0.0
100 200 300 400 500 600 700 800
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Time (μs)
Time (ns)
Switching Speed
Switching Speed
10
15
T A = 25°C
VEE=V-IN=-5V
10
RIN = 1kΩ
5
VOUT
VIN
CL = 10nF
RL = 0.18Ω
RSOURCE=4.7Ω
0
RSINK = 0Ω
-5
Supply Current (A)
TA = 25°C
VCC=V+IN=15V
Voltage (V)
ADVANCE INFORMATION
ZXGD3005E6
1
CL=100nF
VCC= 15V
VIN = 15V
0.1
0.01
Square Wave
CL=1μF
CL=1nF
1E-3
CL=10nF
1E-4
0
100 200 300 400 500 600 700 800
Time (ns)
Switching Speed
Asymmetric Source and Sink Resistance
ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
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10
100
1k
10k
100k
1M
(Frequency (Hz))
Supply Current
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Typical Gate Driver Switching Characteristics
10
CL=1uF
1
CL=100nF
T A = 25°C
0.1
VCC= 15V
CL=10nF
VIN = 15V
RL = 0.18Ω
CL=1nF
0.01
1k
10k
100k
1M
Peak Sink Current (A)
Peak Source Current (A)
10
CL=1uF
1
CL=100nF
T A = 25°C
0.1
VIN = 15V
RL = 0.18Ω
10M
1k
RIN Input Resistance (Ω)
100k
1M
10M
RIN=1MΩ
1000
RIN=100kΩ
td(fall) (ns)
td(rise) (ns)
10k
RIN Input Resistance (Ω)
100
RIN=100kΩ
100
TA = 25°C
10
RIN=200Ω
1
CL=1nF
Sink Current vs. Input Resistance
RIN=1MΩ
1000
CL=10nF
VCC= 15
0.01
Source Current vs. Input Resistance
1
RIN=1kΩ
VCC= 15V
RIN=10kΩ
VIN = 15V
RIN=200Ω
RL = 0.18Ω
10
TA = 25°C
10
100
1
1k
1
CL Load Capacitance (nF)
10000
RIN=100kΩ
1000
RIN=10kΩ
100
TA = 25°C
RIN=200Ω
10
1
tf (ns)
1000
10
RIN=1kΩ
100
1k
RIN=1MΩ
RIN=100kΩ
T A = 25°C
RIN=1kΩ
VIN = 15V
10
RL = 0.18Ω
1k
1
RIN=200Ω
10
VCC= 15V
VIN = 15V
RL = 0.18Ω
100
1k
CL Load Capacitance (nF)
Turn-On Rise Time
Document Number DS35095 Rev. 1 – 2
10
100 RIN=10kΩ
CL Load Capacitance (nF)
ZXGD3005E6
VIN = 15V
RL = 0.18Ω
VCC= 15V
100
VCC= 15V
RIN=10kΩ
Turn-Off Delay Time
RIN=1MΩ
10000
RIN=1kΩ
CL Load Capacitance (nF)
Turn-On Delay Time
tr (ns)
ADVANCE INFORMATION
ZXGD3005E6
Turn-Off Fall Time
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ADVANCE INFORMATION
ZXGD3005E6
Package Outline Dimensions
A
B C
H
K
M
J
L
D
SOT26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
X
ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
ADVANCE INFORMATION
ZXGD3005E6
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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ZXGD3005E6
Document Number DS35095 Rev. 1 – 2
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