12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 4x4mm Standard QFN Package 100% RF Testing General Description The XP1043-QH is a packaged linear power amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. XP1043-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings1 Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) Max Power Dissipation (Pdiss) RF Input Power Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch) MSL Level (MSL) ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) +8.0V 1500 mA -2.4V 5.5W +19 dBm -55 to +85 ºC -65 to +150 ºC 165 ºC MSL3 Class A Class 1A (1) Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power; however, maximum total power dissipated is specified at 5.5 W (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Small Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) P1dB Psat OIP3 at Pout = 18 dBm per Tone Power Detector Range Drain Bias Voltage (Vd1,2,3) Detector Bias Voltage (Vdet,ref ) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Units GHz dB dB dB dB dBm dBm dBm dB VDC VDC VDC mA mA mA Min.1 12.0 19.0 10.0 10.0 31.0 40.0 - -2 Typ. 21.5 15.0 10.0 55.0 30.0 32.0 41.0 37.0 7.0 5.0 -1.0 100 200 400 Max. 16.0 7.0 0.0 200 400 800 (1) Note: Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 Power Amplifier Measurements XP1043-QH: Pout (dBm) vs Pin (dBm) at Room Temp. Vd = 7 V, Iq = 700mA 30 34 25 32 20 30 15 28 Output Power (dBm) S-parameter (dB) XP1043-QH: S-parameters (dB) vs. Freq (GHz), (VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA) 10 5 S21 S11 S22 0 -5 -10 -15 26 24 22 Pout, Freq = 12.5 GHz 20 Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz 18 Pout, Freq = 14.0 GHz 16 Pout, Freq = 14.5 GHz -20 14 Pout, Freq = 15.0 GHz -25 12 Pout, Freq = 15.5 GHz 10 11 12 13 14 15 16 17 10 18 -10 Freq (GHz) -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) XP1043-QH: Pout (dBm) vs Pin (dBm) at +85 °C. Vd = 7 V, Iq = 700mA XP1043-QH: V_Detect (mV) vs Output Power (dBm) Freq = 12.5-15.5 GHz, Temp = -45 to 85 Degree C 10000 12.5GHz, 25C 15.5GHz, 25C 12.5GHz, -45C 15.5GHz, -45C 34 Detector Voltage = Vref - Vdet (mV) 32 Output Power (dBm) 30 28 26 24 22 Pout, Freq = 12.5 GHz 20 Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz 18 Pout, Freq = 14.0 GHz 16 Pout, Freq = 14.5 GHz 14 Pout, Freq = 15.0 GHz 12 Pout, Freq = 15.5 GHz 1000 12.5GHz, 85C 15.5GHz, 85C 100 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 10 Input Power (dBm) 0 3 6 9 12 15 18 21 24 27 Output Power (dBm) XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at Room Temp. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at at +85 °C. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 60 65 55 60 55 50 50 45 45 CI/3 (dBc) CI/3 (dBc) 40 35 30 25 40 35 30 25 CI3, Freq = 12.5 GHz, Temp = 85 C 20 CI3, Freq = 12.5 GHz, Temp = 35 C 20 CI3, Freq = 13.5 GHz, Temp = 85 C 15 CI3, Freq = 13.5 GHz, Temp = 35 C 15 CI3, Freq = 14.5 GHz, Temp = 85 C 10 CI3, Freq = 14.5 GHz, Temp = 35 C 10 5 CI3, Freq = 15.5 GHz, Temp = 35 C 5 CI3, Freq = 15.5 GHz, Temp = 85 c 0 0 14 15 16 17 18 19 Output Power (dBm per tone) 20 21 22 14 15 16 17 18 19 20 21 Output Power (dBm per tone) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 22 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. XP1043-QH-0G00: MTTF hours vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 1.0E+14 1.0E+13 1.0E+12 MTTF (hours) 1.0E+11 1.0E+10 1.0E+09 1.0E+08 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (°C) XP1043-QH-0G00: Tch vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 225 200 Tch (°C) 175 150 125 100 75 50 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (°C) XP1043-QH-0N00: Operating Power De-rating Curve (continuous) 6 5 Pdiss (W) 4 3 2 1 0 25 50 75 100 125 150 175 Package Base Temp (ºC) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 Package Dimensions / Layout Functional Schematic Pin Designations VD3 19 VD2 20 21 22 GND GND VD1 23 24 nc GND 2 17 GND nc 3 16 nc RF IN 4 15 GND 5 14 nc GND 6 13 nc nc Vdet Vref 8 VG1 VG2 VG3 7 12 GND 11 18 10 1 9 GND RF OUT Pin Number Pin Name Pin Function Ground GND 1-2 nc Not Connected 3 4 RF In RF Input Ground 5-6 GND Gate 1 Bias VG1 7 VG2 Gate 2 Bias 8 9 VG3 Gate 3 Bias Not Connected 10 nc Pwr Det 11 Vdet Vref Pwr Det Reference 12 Not Connected 13-14 nc RF Out RF Output 15 nc Not Connected 16 17-18 GND Ground Drain 3 Bias 19 VD3 Drain 2 Bias VD2 20 VD1 Drain 1 Bias 21 22-23 GND Ground nc Not Connected 24 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Nominal Value GND GND GND ~ -1.0V ~ -1.0V ~ -1.0V GND 5.0V 5.0V GND GND GND 7.0V, 400 mA 7.0V, 200 mA 7.0V, 100 mA GND GND Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias conditions of VD1,2,3 at 7.0V with 100, 200, 400mA respectively. The device can also be safely biased to a maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF power. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Under heavy RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10µF decoupling caps. App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5V bias and measuring the difference in output voltage with standard op-amp in a differential mode configuration. Bias Circuit R To Gate From Bias Circuit The output impedance of the bias circuit’s gate output should be small. When in saturation, the gates of the XP1043-QH can draw several mA which may cause adverse affects in a gate circuit with high output impedance. It is recommended that an Emitter Follower circuit be used (shown above), which follows the bias circuit’s gate output. This will result in a high-input impedance, low-output impedance buffer between the gate output of the bias circuit and the gate input of the XP1043-QH. -5V Emitter Follower placed between the (gate) output of the bias circuit MMIC gate Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 Recommended Layout Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-16.0 GHz Power Amplifier QFN, 4x4mm P1043-QH February 2010 - Rev 13-Feb-10 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Electrostatic Sensitive Device Observe all necessary precautions when handling. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Typical Reflow Profiles Reflow Profile Ramp Up Rate Activation Time and Temperature Time Above Melting Point Max Peak Temperature Time Within 5 ºC of Peak Ramp Down Rate SnPb 3-4 ºC/sec 60-120 sec @ 140-160 ºC 60-150 sec 240 ºC 10-20 sec 4-6 ºC/sec Pb Free 3-4 ºC/sec 60-180 sec @ 170-200 ºC 60-150 sec 265 ºC 10-20 sec 4-6 ºC/sec Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is 100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (260°C reflow) “Pb Free” processes. Ordering Information Part Number for Ordering XP1043-QH-0G00 XP1043-QH-0G0T XP1043-QH-EV1 Description Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantity Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reel XP1043-QH evaluation board C a u t i o n : E S D S e n s i t i ve Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 7 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.