VISHAY 63CTQ100G-N3

VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
FEATURES
Base
common
cathode
2
•
•
•
•
TO-220AB
•
3
2
Common Anode
cathode
1
Anode
•
•
•
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2 x 30 A
VR
100 V
VF at IF
0.69 V
IRM max.
20 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
11.25 mJ
175 °C TJ operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
60
A
100
V
Rectangular waveform (per device)
VRRM
IFRM
TC = 139 °C (per leg)
IFSM
tp = 5 μs sine
VF
30 Apk, TJ = 125 °C
TJ
Range
60
A
1500
0.69
V
- 65 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-63CTQ100GPbF
VS-63CTQ100G-N3
UNITS
100
100
V
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
per leg
per device
Peak repetitive forward current per leg
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 139 °C, rectangular waveform
IFRM
Rated VR, square wave, 20 kHz, TC = 140 °C
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
30
60
60
A
1500
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.75 A, L = 40 mH
11.25
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.75
A
Revision: 29-Aug-11
10 ms sine or 6 ms rect. pulse
300
Document Number: 94508
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
30 A
VFM (1)
Maximum forward voltage drop
TJ = 25 °C
60 A
30 A
TJ = 125 °C
60 A
TJ = 25 °C
VR = Rated VR
Maximum instantaneous reverse current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
LS
Measured from top of terminal to mounting plane
Typical series inductance
Maximum voltage rate of change
dV/dt
TJ = 125 °C
Rated VR
TYP.
MAX.
0.78
0.82
0.94
1.0
0.64
0.69
0.78
0.83
0.02
0.3
11
20
UNITS
V
mA
1100
pF
8.0
nH
10 000
V/µs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
- 65 to 175
°C
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.2
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C/W
Approximate weight
Mounting torque
Marking device
Revision: 29-Aug-11
minimum
maximum
Non-lubricated threads
Case style TO-220AB
2
g
0.07
oz.
6 (5)
kgf cm
(lbf in)
12 (10)
63CTQ100G
Document Number: 94508
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
1000
150˚C
125˚C
R
10
100˚C
Reverse Current - I
(A)
F
1
75˚C
0.1
50˚C
25˚C
0.01
0.001
100
0.0001
0
20
40
60
80
100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
(pF)
Tj = 25˚C
T
10
Junction Capacitance - C
Instantaneous Forward Current - I
Tj = 175˚C
100
(mA)
1000
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1
0
0.2 0.4 0.6 0.8
1
100
1.2 1.4 1.6 1.8
0
Forward Voltage Drop - VFM (V)
20
40
60
80
100
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
10
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
0.01
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-Aug-11
Document Number: 94508
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
30
170
Average Power Loss (Watts)
Allowable Case Temperature (°C)
180
DC
160
150
140
130
120 Square wave (D = 0.50)
80% Rated Vr applied
110
100 see note (1)
90
0
F(AV)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
5
0
5 10 15 20 25 30 35 40 45
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
FSM
(A)
DC
RMS Limit
15
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Non-Repetitive Surge Current - I
20
0
5 10 15 20 25 30 35 40 45
Average Forward Current - I
25
1000
100
10
100
1000
Square Wave Pulse Duration - t
10000
(microsec)
p
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-Aug-11
Document Number: 94508
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
63
C
T
Q
100
G
PbF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (60 A)
3
-
C = Common cathode
4
-
T = TO-220
5
-
Q = Schottky “Q” series
6
-
Voltage rating (100 = 100 V)
7
-
G = Schottky generation
8
-
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-63CTQ100GPbF
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-63CTQ100G-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 29-Aug-11
www.vishay.com/doc?95222
TO-220AB PbF
www.vishay.com/doc?95225
TO-220AB -N3
www.vishay.com/doc?95028
Document Number: 94508
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
DiodesAmeri[email protected], [email protected], [email protected]
www.vishay.com
1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000