80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY The 80EPS..PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. 1.17 V This product has been designed and qualified for industrial level. IFSM 1450 A Compliant to RoHS directive 2002/95/EC. VRRM 800/1200 V VF at 80 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 80 A, TJ = 25 °C VALUES UNITS 80 A 800/1200 V 1450 A 1.17 V - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 80EPS08PbF 800 900 80EPS12PbF 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS TC = 100 °C, 180° conduction half sine wave VALUES UNITS 80 10 ms sine pulse, rated VRRM applied 1450 10 ms sine pulse, no voltage reapplied 1500 10 ms sine pulse, rated VRRM applied 10 500 10 ms sine pulse, no voltage reapplied 14 000 t = 0.1 ms to 10 ms, no voltage reapplied 105 000 A A2 s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94347 Revision: 07-Jul-09 For technical questions, contact: [email protected] www.vishay.com 1 80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES UNITS 1.17 V 3.17 mΩ 0.73 V 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 0.35 40 Mounting surface, flat, smooth and greased Approximate weight Mounting torque VALUES °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Case style TO-247AC (JEDEC) For technical questions, contact: [email protected] 80EPS08 80EPS12 Document Number: 94347 Revision: 07-Jul-09 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products 160 80EPS.. Series RthJC (DC) = 0.35 K/W 140 130 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperture (°C) 150 Ø Conduction angle 120 110 30° 60° 100 90° 120° 90 180° DC 180° 120° 90° 60° 30° 140 120 100 80 RMS limit Ø 60 Conduction period 40 80EPS.. Series TJ = 150 °C 20 0 80 0 10 20 30 40 50 60 70 80 90 0 150 1600 80EPS.. Series RthJC (DC) = 0.35 K/W 140 130 Ø Conduction period 120 30° 60° 90° 110 120° 180° 100 40 60 80 120 100 140 At any rated load condition and with rated VRRM applied following surge. 1400 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 20 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Average Forward Current (A) Fig. 1 - Current Rating Characteristics Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1200 1000 800 80EPS.. Series 600 DC 90 400 0 20 40 60 80 100 120 1 140 Fig. 2 - Current Rating Characteristics 1800 180° 120° 90° 60° 30° Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 1600 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 120 80 100 Number of Equal Amplitudr Halfe Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) 100 10 RMS limit 60 Ø 40 Conduction angle 80EPS.. Series TJ = 150 °C 20 1400 1200 1000 800 600 80EPS.. Series 400 0 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 94347 Revision: 07-Jul-09 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 3 80EPS..PbF High Voltage Series Instantaneous Forward Current (A) Vishay High Power Products Input Rectifier Diode, 80 A 1000 100 TJ = 25 °C 10 TJ = 150 °C 80EPS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value (DC operation) 0.1 Single pulse 0.01 0.0001 0.001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 80EPS.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94347 Revision: 07-Jul-09 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 80 E P S 12 PbF 1 2 3 4 5 6 1 - Current rating (80 = 80 A) 2 - Circuit configuration: E = Single diode 3 - 4 - Package: P = TO-247AC Type of silicon: S = Standard recovery rectifier 5 - 6 - Voltage ratings 08 = 800 V 12 = 1200 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226 Document Number: 94347 Revision: 07-Jul-09 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1