New Product VSIB620 thru VSIB680 Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability ~ • High case dielectric strength of 1500 VRMS ~ ~ ~ • Solder dip 260 °C, 40 s Case Style GSIB-5S • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 200 V to 800 V IFSM 180 A MECHANICAL DATA Case: GSIB-5S IR 10 µA Epoxy meets UL 94 V-0 flammability rating VF 0.95 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSIB620 VSIB640 VSIB660 VSIB680 UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V VDC 200 400 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at (1) TC = 100 °C TA = 25 °C IF(AV) 6.0 2.8 (2) A Peak forward surge current single sine-wave superimposed on rated load IFSM 180 A I 2t 120 A2 s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length Document Number: 84656 Revision: 15-Dec-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VSIB620 thru VSIB680 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VSIB620 VSIB640 VSIB660 VSIB680 UNIT Maximum instantaneous forward voltage drop per diode 3.0 A VF 0.95 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 125 °C IR 10 250 µA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSIB620 VSIB640 RθJA RθJC Typical thermal resistance VSIB660 VSIB680 UNIT (2) 22 3.4 (1) °C/W Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 7.0 45 20 Tube VSIB660-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 210 TJ = TJ Max. Single Sine-Wave Heatsink Mounting, TC Peak Forward Surge Current (A) Average Forward Output Current (A) 10 8 6 4 P.C.B. Mounting, TA 2 0 180 150 120 90 60 30 1.0 Cycle 0 0 50 100 150 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 84656 Revision: 15-Dec-08 New Product VSIB620 thru VSIB680 Vishay General Semiconductor 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 25 °C 1 TJ = 125 °C 0.1 0.01 0.3 0.4 0.5 0.6 0.8 0.7 1.0 0.9 1.1 100 10 1 0.1 1.2 100 10 Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (µA) 1 Instantaneous Forward Voltage (V) TJ = 150 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 10 1 0.01 20 40 60 80 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 Document Number: 84656 Revision: 15-Dec-08 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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