AM0912-300 RF POWER TRANSISTOR PACKAGE - .400 2L FLG(A) DESCRIPTION: 2xB .040 x 45° C F E D G FEATURES INCLUDE: 2xR H J K I • Gold Metallization • Hermetic Package • Input/Output Matching L N P M M AX IM UM DIM M INIMU M inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 24 A D .376 / 9.55 E .110 / 2.79 .130 / 3.30 50 V F .395 / 10.03 .407 / 10.34 940 W @ TC = ≤ 100 °C H MAXIMUM RATINGS IC VCC PDISS A 4x .062 x 45° The ASI AM0912-300 is a Common Base Transistor Designed for DME and TACAN Pulse Power Amplifier Applications. TSTG -65 °C to +200 °C θJC 0.16 °C/W CHARACTERISTICS .193 / 4.90 G .490 / 12.45 .510 / 12.95 .100 / 2.54 I -65 °C to +250 °C TJ .396 / 10.06 J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P TC = 25 °C SYMBOL TEST CONDITIONS BVCBO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 15 mA ICES VCB = 50 V hFE VCE = 5.0 V POUT PG ηC f = 960 to 1215 MHz PIN = 60 W VCC = 50 V Pulse Width = 10 µS Duty Cycle = 10% RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.0 V 30 IC = 5.0 A UNITS --- 10 300 7.0 38 330 7.4 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA W dB % REV. B 1/1 AM A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 AM0912-300 REV. B 2/2