TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features ● ● ● ● ● Block Diagram Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Ordering Information Part No. Package Packing TSM1N60SCT B0 TO-92 1Kpcs / Bulk TSM1N60SCT A3 TO-92 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 600 ±30 V V Continuous Drain Current Pulsed Drain Current ID IDM 0.3 1.2 A A IS 1 A EAS 50 mJ PDTOT TJ 3 +150 TJ, TSTG TL -55 to +150 10 a,b Continuous Source Current (Diode Conduction) Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) o Total Power Dissipation @TC = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case) 1/8 W C o o C S Version: C07 TSM1N60S 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Case Symbol Limit RӨJA 125 o C/W 50 o C/W 40 o C/W RӨJC Thermal Resistance - Junction to Lead Notes: Surface mounted on FR4 board t ≤ 10sec RӨJL Unit Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.3A RDS(ON) -- 11 13 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ± 100 nA Forward Transconductance VDS ≧50V, ID = 0.3A gfs -- 5 -- S Diode Forward Voltage IS = 1A, VGS = 0V VSD -- -- 1.5 V Qg -- 4.5 6 Qgs -- 1.1 -- Qgd -- 2 -- Ciss -- 155 200 Coss -- 20 26 Crss -- 3 4 td(on) -- 10 30 tr -- 20 50 td(off) -- 25 45 -- 24 60 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 1A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 1A, Turn-Off Delay Time VDS = 300V, RG = 6Ω Turn-Off Fall Time tf Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/8 nC pF nS Version: C07 TSM1N60S 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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