APT20M11JLL
200V 176A 0.011Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M11JLL
UNIT
200
Volts
Drain-Source Voltage
176
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
704
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
176
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 88A)
TYP
MAX
Volts
0.011
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7022 Rev D
Symbol
DYNAMIC CHARACTERISTICS
APT20M11JLL
Test Conditions
Characteristic
Symbol
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
4220
Crss
Reverse Transfer Capacitance
f = 1 MHz
90
VGS = 10V
180
VDD = 100V
80
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 176A @ 25°C
td(off)
tf
65
VDD = 100V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
6
ns
55
ID = 176A @ 25°C
Turn-off Delay Time
nC
24
VGS = 15V
Rise Time
pF
65
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
10320
VGS = 0V
3
MAX
9
INDUCTIVE SWITCHING @ 25°C
1190
VDD = 133V, VGS = 15V
ID = 176A, RG = 5Ω
2485
INDUCTIVE SWITCHING @ 125°C
1260
VDD = 133V, VGS = 15V
ID = 176A, RG = 5Ω
µJ
2815
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
IS
TYP
MAX
176
Continuous Source Current (Body Diode)
UNIT
Amps
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -176A, dl S /dt = 100A/µs)
460
ns
Q rr
Reverse Recovery Charge (IS = -176A, dl S /dt = 100A/µs)
7.0
µC
dv/
Peak Diode Recovery
dt
dv/
704
(Body Diode)
(VGS = 0V, IS = -176A)
dt
1.3
5
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
TYP
0.18
40
4 Starting Tj = +25°C, L = 0.23mH, RG = 25Ω, Peak IL = 176A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID176A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.15
0.7
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7022 Rev D
9-2004
0.20
0.10
0.3
0.05
t2
0.1
0
10-5
t1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT20M11JLL
300
VGS =15 &10V
Junction
temp. (°C)
0.0268
Power
(watts)
0.109
0.0426
0.0456F
0.765F
23.5F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
250
8V
200
7.5V
150
7V
100
6.5
50
6V
Case temperature. (°C)
5.5V
0
250
200
TJ = +125°C
150
TJ = +25°C
100
TJ = -55°C
50
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
180
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
140
120
100
80
60
40
20
0
25
I
V
D
D
1.20
1.10
VGS=10V
1.00
0.90
0.80
VGS=20V
0
50
100 150 200 250 300 350
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 88A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 88A
GS
1.30
1.15
160
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
9-2004
300
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7022 Rev D
ID, DRAIN CURRENT (AMPERES)
350
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
704
100
50
1mS
C, CAPACITANCE (pF)
100µS
10
= 176A
14
12
VDS=40V
10
VDS=100V
8
VDS=160V
6
4
2
0
100
10
5
10
50 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
1,000
Crss
10mS
1
I
Coss
50
TC =+25°C
TJ =+150°C
SINGLE PULSE
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
10,000
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
160
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
500
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
500
APT20M11JLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
0
TJ =+150°C
100
TJ =+25°C
50
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
300
V
140
T = 125°C
J
L = 100µH
80
V
DD
R
G
200
= 130V
tr and tf (ns)
td(on) and td(off) (ns)
120
100
= 5Ω
T = 125°C
J
L = 100µH
60
30
60
0
90
120 150 180 210 240 270
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
R
G
I
= 5Ω
E ON includes
diode reverse recovery.
4000
Eoff
2000
SWITCHING ENERGY (µJ)
J
L = 100µH
60
V
= 130V
T = 125°C
SWITCHING ENERGY (µJ)
30
10000
V
9-2004
tr
120 150 180 210 240 270
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8000
050-7022 Rev D
150
50
20
6000
tf
100
td(on)
40
0
= 5Ω
G
250
td(off)
= 130V
DD
R
DD
D
90
= 130V
= 176A
T = 125°C
8000
J
L = 100µH
EON includes
Eoff
diode reverse recovery.
6000
4000
Eon
2000
Eon
0
30
60
90
120 150 180 210 240 270
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M11JLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(on)
tr
TJ125°C
td(off)
Drain Current
Drain Voltage
90%
90%
tf
5%
10%
5%
10%
Switching Energy
0
Drain Voltage
Switching Energy
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT2X101D20
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
9-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7022 Rev D
7.8 (.307)
8.2 (.322)