TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching to Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 32 ± 38 830 15 TSHG5510 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHG5510 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81887 Rev. 1.1, 25-Jun-09 For technical questions, contact: [email protected] www.vishay.com 1 TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V IF = 100 mA, tp = 20 ms VF 1.3 1.45 1.7 IF = 450 mA, tp = 100 µs VF 1.5 1.75 2.1 IF = 1 A, tp = 100 µs VF 2.1 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie Forward voltage Junction capacitance Radiant intensity mV/K 10 µA 54 mW/sr 110 18 32 320 V V pF mW/sr IF = 100 mA, tp = 20 ms φe 55 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 38 deg Peak wavelength IF = 100 mA λp 830 nm Spectral bandwidth IF = 100 mA Δλ 55 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz Radiant power Temperature coefficient of φe Angle of half intensity Cut-off frequency Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81887 Rev. 1.1, 25-Jun-09 TSHG5510 High Speed Infrared Emitting Diode, Vishay Semiconductors 830 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Tamb < 50 °C tP/T = 0.01 1000 φe - Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 10 0.1 100 0.01 0.1 1 10 1 100 21062 tP - Pulse Duration (ms) 16031 Φe, rel - Relative Radiant Power IF - Forward Current (A) 100 1000 1.25 10 1 0.1 0.01 1.0 0.75 0.5 0.25 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 740 4 VF - Forward Voltage (V) 21009 900 800 λ- Wavelength (nm) 16972_1 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 1.1 Ie, rel - Relative Radiant Intensity 1000 Ie - Radiant Intensity (mW/sr) 10 IF - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration 100 10 1 tP = 100 µs tP/T = 0.002 1 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81887 Rev. 1.1, 25-Jun-09 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 0.1 21010 tP = 100 µs tP/T = 0.002 1 21012 30 50 70 90 Angle (°) Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Ø 5.9 ± 0.15 PACKAGE DIMENSIONS in millimeters SR2.35 (1.72) 3.8 ± 0.15 C 9.5 ± 0.3 4.4 ± 0.3 A Area not plane 1.1 ± 0.25 1 min. 31.4 ± 0.55 Ø 4.8 ± 0.15 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5390.01-4 Issue: 2; 19.05.09 20796 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81887 Rev. 1.1, 25-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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