ONSEMI BAS21SLT1G

BAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
•
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ESD Rating − Machine Model: Class B
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ANODE
1
3
CATHODE/ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
CATHODE
2
Symbol
Value
Unit
VR
250
Vdc
VRRM
250
Vdc
IF
225
mAdc
IFM(surge)
625
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
3
1
2
SOT−23
CASE 318
STYLE 11
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
MARKING DIAGRAM
JT M G
G
1
Thermal Resistance,
Junction to Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
JT = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS21SLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
BAS21SLT1/D
BAS21SLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
−
−
0.1
100
250
−
−
−
1000
1250
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR)
Adc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr
−
50
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 3.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = −55°C
1000
25°C
800
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
1200
155°C
600
400
200
1
1
10
100
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
TA = 155°C
TA = 25°C
TA = −55°C
1
FORWARD CURRENT (mA)
2
5
10
20
50
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
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2
100 200 300
BAS21SLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE‐ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAS21SLT1/D