T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved D-55 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. PRODUCT SUMMARY IF(AV) 40 A/70 A/85 A Type Modules - Diode, Fast MAJOR RATINGS AND CHARACTERISTICS SYMBOL T40HFL T70HFL T85HFL UNITS IF(AV) 40 70 85 A IF(RMS) 63 110 133 A 50 Hz 475 830 1300 60 Hz 500 870 1370 50 Hz 1130 3460 8550 60 Hz 1030 3160 7810 IFSM I2t CHARACTERISTICS A A2s VRRM Range 100 to 1000 V trr Range 200 to 1000 ns TJ Range - 40 to 125 °C Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE trr CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 S02, S05, S10 100 150 20 S02, S05, S10 200 300 40 S02, S05, S10 400 500 60 S02, S05, S10 600 700 80 S05, S10 800 900 100 S05, S10 1000 1100 T40HFL.. T70HFL.. T85HFL.. IRRM MAXIMUM AT TJ = 25 °C μA 100 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) TEST CONDITIONS IF(RMS) UNITS 40 70 85 A t = 8.3 ms No voltage reapplied °C 63 110 133 475 830 1300 500 870 1370 400 700 1100 420 730 1150 1130 3460 8550 1030 3160 7810 800 2450 6050 730 2230 5520 11 300 34 600 85 500 IFSM t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum I2t A2s t = 10 ms t = 8.3 ms I2√t 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied Low level value of threshold voltage VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 0.82 0.87 0.84 High level value of threshold voltage VF(TO)2 TJ = 25 °C, (I > π x IF(AV)) 0.84 0.90 0.86 rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 7.0 2.77 2.15 High level value of forward slope resistance rf2 TJ = 25 °C, (I > π x IF(AV)) 6.8 2.67 2.07 IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.60 1.73 1.55 www.vishay.com 2 A2√s V Low level value of forward slope resistance Maximum forward voltage drop A A t = 10 ms t = 10 ms Maximum I2√t for fusing T85HFL 70 t = 8.3 ms Maximum I2t for fusing T70HFL 180° conduction, half sine wave t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current T40HFL mΩ VFM For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time Maximum reverse recovery charge trr Qrr T40HFL TEST CONDITIONS (1) T70HFL T85HFL S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290 TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000 200 500 1000 TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 UNITS ns μC Note (1) Tested on LEM 300 A diodemeter tester BLOCKING PARAMETER SYMBOL Maximum peak reverse leakage current RMS isolation voltage TEST CONDITIONS IRRM TJ = 125 °C VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s T40HFL T70HFL T85HFL UNITS 20 mA 3500 V T40HFL T70HFL T85HFL UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Storage temperature range TStg - 40 to 150 Maximum internal thermal resistance, junction to case per module RthJC DC operation Thermal resistance, case to heatsink per module RthCS Mounting surface, flat, smooth and greased 0.85 Mounting torque ± 10 % K/W 1.3 ± 10 % Nm M5 screws terminals Non-lubricated threads busbar to terminal 3 ± 10 % See dimensions link at the end of datasheet Approximate weight 0.46 0.2 M3.5 mounting screws (1) Non-lubricated threads base to heatsink 0.53 °C Case style 54 g 19 oz. D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24 T70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19 T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015 UNITS K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 T40HFL, T70HFL, T85HFL Series T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 10 20 30 40 50 130 T70HFL.. Series RthJC (DC) = 0.53 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Period 90 80 30° 60° 70 90° 120° 180° 60 DC 50 0 10 20 30 40 50 60 70 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 130 T70HFL.. Series R thJC (DC) = 0.53 K/ W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 50 60 70 80 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 Maximum Allowable Case Temperature (°C) Maximum Allowab le Case Temperature (°C) Maximum Allowa ble Case Temperature (°C) Maximum Allowable Case Temp erature (°C) 130 Maximum Allowa ble Case Temperature (°C) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 140 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series 180° 120° 90° 60° 30° 60 50 RMSLimit 40 30 20 Conduc tion Angle 10 T40HFL.. Series TJ= 125°C 0 0 5 10 15 20 25 30 35 Maximum Average Forward Power Loss (W) 70 Vishay Semiconductors 140 DC 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduc tion Period 40 T70HFL.. Series TJ = 125°C 20 0 0 40 20 40 60 80 100 120 Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics 90 DC 180° 120° 90° 60° 30° 80 70 60 50 RMS Limit 40 30 Conduc tion Period 20 T40HFL.. Series T J = 125°C 10 0 0 10 20 30 40 50 60 Maximum Average Forward Power Loss (W) Average Forward Current (A) 110 180° 120° 90° 60° 30° 100 90 80 70 RMS Limit 60 50 40 Conduc tion Angle 30 T85HFL.. Series TJ= 125°C 20 10 0 70 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Fig. 11 - Forward Power Loss Characteristics 100 180° 120° 90° 60° 30° 90 80 70 60 RMS Limit 50 40 30 Conduc tion Angle 20 T70HFL.. Series TJ= 125°C 10 0 0 10 20 30 40 50 60 70 Average Forward Current (A) Fig. 9 - Forward Power Loss Characteristics Document Number: 93184 Revision: 19-May-10 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Ma ximum Average Forward Power Lo ss (W) Maximum Average Forward Power Lo ss (W) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 160 DC 180° 120° 90° 60° 30° 140 120 100 80 RMSLimit 60 Conduc tion Period 40 T85HFL.. Series TJ = 125°C 20 0 0 20 40 60 80 100 120 140 Average Forward Current (A) Fig. 12 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 T40HFL, T70HFL, T85HFL Series 450 Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 400 350 300 250 200 150 T40HFL.. Series 100 1 10 850 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forwa rd Current (A) Vishay Semiconductors Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 125°C No Voltage Reapplied Rated V RRM Reapplied 750 650 550 450 350 250 T70HFL.. Series 150 0.01 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 450 400 350 300 250 200 150 T40HFL.. Series 100 0.01 0.1 1 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 500 400 T70HFL.. Series 200 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 15 - Maximum Non-Repetitive Surge Current www.vishay.com 6 1000 900 800 700 600 500 T85HFL.. Series 400 300 10 100 Fig. 17 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 800 300 At Any Rated Load Condition And With Rated V RRM Ap p lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 600 1200 1 Pulse Train Duration (s) 700 1 Fig. 16 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forwa rd Current (A) Fig. 13 - Maximum Non-Repetitive Surge Current 500 0.1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 1300 1200 1100 1000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied 900 800 700 600 500 400 300 0.01 T85HFL.. Series 0.1 1 Pulse Train Duration (s) Fig. 18 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Maximum Reverse Rec overy Time - Trr (µs) 0.51 0.5 I FM= 300A 0.49 220A 172A 0.48 100A 50A 0.47 T40HFL..S02 T70HFL..S02 TJ = 125 °C 0.45 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Maximum Reverse Rec overy Charge - Qrr (µC) Fig. 19 - Recovery Time Characteristics 8 7 6 I FM= 300A 220A 172A 100A 50A 5 4 3 T40HFL..S02 T70HFL..S02 TJ = 125 °C 2 1 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Maximum Re verse Rec overy Current - Irr (A) Fig. 20 - Recovery Charge Characteristics 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 6 T40HFL..S02 T70HFL..S02 TJ = 125 °C 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 21 - Recovery Current Characteristics Document Number: 93184 Revision: 19-May-10 Vishay Semiconductors 1.1 1 I FM= 300A 0.9 220A 172A 100A 0.8 50A 0.7 T40HFL..S05 T70HFL..S05 TJ = 125 °C 0.6 10 100 Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs) Fig. 22 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (µC) 0.46 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 T40HFL..S05 T70HFL..S05 TJ = 125 °C 6 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs) Fig. 23 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 28 26 24 22 I FM= 300A 220A 172A 100A 50A 20 18 16 14 12 10 8 T40HFL..S05 T70HFL..S05 TJ = 125 °C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 24 - Recovery Current Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 T40HFL, T70HFL, T85HFL Series Maximum Reverse Rec overy Time - Trr (µs) 1.8 1.7 I FM= 300A 1.6 200A 1.5 100A 1.4 50A 1.3 1.2 1.1 T40HFL..S10 T70HFL..S10 TJ = 125 °C 1 10 Maximum Reverse Recovery Time - Trr (µs) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors 100 1.2 1.1 1 IFM = 300A 0.9 200A 100A 0.8 50A 0.7 T85HFL..S02 T J = 125°C 0.6 10 100 Fig. 25 - Recovery Time Characteristics Fig. 28 - Recovery Time Characteristics 35 I FM= 300A 200A 30 100A 25 50A 20 15 10 T40HFL..S10 T70HFL..S10 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Fig. 26 - Recovery Charge Characteristics 45 40 I FM= 300A 200A 100A 35 50A 30 25 20 15 T40HFL..S10 T70HFL..S10 TJ = 125 °C 10 10 20 30 40 50 60 70 80 90 100 25 IFM = 300A 20 200A 100A 15 50A 10 T85HFL..S02 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 29 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) 40 Maximum Reverse Rec overy Charge - Qrr (µC) Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs) Maximum Reverse Re covery Charge - Qrr (µC) Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs) 28 26 24 IFM = 300A 200A 100A 50A 22 20 18 16 14 12 10 8 T85HFL..S02 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Fig. 27 - Recovery Current Characteristics Fig. 30 - Recovery Current Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series 1.3 1.2 IFM = 300A 1.1 200A 1 100A 50A 0.9 T85HFL..S05 TJ = 125°C 0.8 10 Maximum Reverse Rec overy Time - Trr (µs) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 100 Vishay Semiconductors 2 1.9 1.8 IFM = 300A 1.7 1.6 200A 1.5 100A 1.4 1.3 1.2 1.1 50A T85HFL..S10 TJ = 125°C 1 10 100 Fig. 31 - Recovery Time Characteristics Fig. 34 - Recovery Time Characteristics 30 IFM = 300A 27 200A 24 21 18 100A 50A 15 12 9 T85HFL..S05 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Rec overy Charge - Qrr (µC) Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs) Maximum Reverse Recovery Charge - Qrr (µC) Ra te Of Fall Of Forward Current - di/ d t (A/ µs) 55 50 IFM = 300A 45 200A 40 100A 35 30 50A 25 20 15 T85HFL..S10 TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 Fig. 32 - Recovery Charge Characteristics Fig. 35 - Recovery Charge Characteristics 35 IFM = 300A 200A 30 100A 50A 25 20 15 T85HFL..S05 TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Rec overy Current - Irr (A) Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) 60 55 IFM = 300A 200A 50 100A 45 50A 40 35 30 25 20 T85HFL..S10 TJ = 125°C 15 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs) Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs) Fig. 33 - Recovery Current Characteristics Fig. 36 - Recovery Current Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 9 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors Peak Forward Current (A) 1E4 tp T40HFL.. Series Trapezoidal Pulse T C = 70 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 tp 1E1 1E1 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse T = 70°C C 1E2 1E1 1E4 1E1 1E4 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics 1E4 Peak Forward Current (A) tp T40HFL.. Trapezoidal Pulse TC= 90 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 tp 1E1 1E1 2500 1500 1000 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse TC= 90°C 1E2 1E3 1E1 1E1E4 4 E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 38 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 1E3 0.1 0.04 0.02 1E2 0.4 4 10 0.4 0.04 0.02 0.01 0.01 1E1 tp 1E0 1E1 0.2 1 2 T40HFL.. Series Sinusoid al Pulse TJ = 125 °C 1E2 tp 1E3 Pulse Basewidth (µs) 1E1E4 4 1E1 1E1 1 2 4 10 20 joules per pulse 0.2 0.1 T40HFL.. Series Trapezoidal Pulse TJ= 125°C di/ dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 39 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors Peak Forward Current (A) 1E4 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 1E2 tp 1E1 1E1 T70HFL.. Series Sinusoid a l Pulse TC= 70°C tp 1E2 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 70°C 1E1 1 1E41E 1E4 1E3 2500 1500 1000 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 40 - Frequency Characteristics Peak Forward Current (A) 1E4 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 tp 1E1 1E1 T70HFL.. Series Sinusoidal Pulse TC= 90°C tp 1E2 1E3 2500 1500 1000 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 90°C 1E4 1E41E1 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 41 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 4 1E3 1 0.1 0.04 0.02 1E2 20 joules per pulse 10 2 1 0.4 0.2 tp 0.02 T70HFL.. Series Sinusoidal Pulse TJ = 125°C 1E2 10 0.1 0.04 0.2 0.01 tp 1E0 1E1 4 0.4 0.01 1E1 2 1E3 Pulse Basewidth (µs) 1E41E 1E4 1E1 1 T70HFL.. Series Trapezoidal pulse T J= 125°C di/ dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 42 - Maximum Forward Energy Power Loss Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 11 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz 1E2 tp T85HFL.. Series Sinusoidal Pulse TC= 70°C 1E1 1E1 1E2 tp 1E4 1E41E1 1E1 1E3 T85HFL.. Series Trapezoidal Pulse T C= 70°C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 43 - Frequency Characteristics Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 1E2 tp 1E1 1E1 T85HFL.. Series Sinusoidal Pulse TC= 90°C 1E2 tp 1E3 1E4 1E1 1 1E41E 400 200 50 Hz T85HFL.. Series Trapezoidal Pulse T C= 90°C 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 44 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 20 joules per pulse 10 4 1E3 1 0.4 0.2 0.1 0.04 0.02 0.01 1E2 1E1 tp 1E0 1E1 4 2 0.4 1 0.2 0.1 0.04 0.02 0.01 T85HFL.. Series Sinusoidal Pulse TJ= 125 °C 1E2 10 2 tp 1E3 Pulse Basewidth (µs) 1E4 1E41E1 1E1 T85HFL.. Series Trapezoid al Pulse T J= 125°C di/dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 45 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 12 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A 10000 Instanta neous Forwa rd Current (A) Instantaneous Forward Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 T40HFL.. Series 1 0.5 Vishay Semiconductors 1000 100 TJ= 25°C TJ= 125°C 10 T70HFL.. Series 1 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics Instantaneous Forward Current (A) 10000 1000 TJ= 25°C TJ= 125°C 100 T85HFL.. Series 10 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Transient Thermal Impedanc e ZthJC (K/ W) Fig. 48 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: R thJC = 0.85 K/ W R thJC = 0.53 K/ W R thJC = 0.46 K/ W (DC Operation) T40HFL.. Series T70HFL.. Series T85HFL.. Series 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 49 - Thermal Impedance ZthJC Characteristics Document Number: 93184 Revision: 19-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 13 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A ORDERING INFORMATION TABLE Device code T 40 HFL 100 S10 1 2 3 4 5 1 - Module type 2 - Current rating 3 - Fast recovery diode 4 - Voltage code x 10 = VRRM 5 - trr code 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) S02 = 200 ns S05 = 500 ns S10 = 1000 ns CIRCUIT CONFIGURATION CIRCUIT Single switch diode CIRCUIT CONFIGURATION CODE N/A CIRCUIT DRAWING + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 14 www.vishay.com/doc?95313 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93184 Revision: 19-May-10 Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 11 (0.43) 18 (0.71) + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95313 Revision: 01-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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