HTSEMI BAT54CT

BAT54T/AT/CT/ST
SWITCHING DIODE
SOT-523
FEATURES
z
Low Forward Voltage Drop
Fast Switching
z
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
DC Blocking Voltage
VR
30
V
Average Rectified Output Current
IO
200
mA
Power Dissipation
Pd
150
mW
Junction temperature
TJ
125
℃
TSTG
-65-125
℃
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Total
leakage current
voltage
capacitance
Reverse recovery time
Symbol
Test
V(BR)
IR= 100μA
IR
VF
CT
t rr
conditions
VR=25V
MIN
MAX
30
V
2
uA
IF=0.1mA
240
IF=1mA
320
IF=10mA
400
IF=30mA
500
IF=100mA
1000
VR=1V,f=1MHz
IF=IR=10mA,
Irr=0.1xIR,RL=100Ω
UNIT
mV
10
pF
5
nS
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
BAT54T/AT/CT/ST
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05