HTSEMI BAT54X

BAT54X
Schottky
Diodes
SOD-523
+
FEATURES
z Extremely Fast Switching Speed
z Low forward voltage
MARKING: JV
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
30
V
DC Blocking Voltage
VR
21
V
Average Rectified Output Current
IO
100
mA
Forward continuous Current
IF
200
mA
Repetitive peak Forward Current
IFRM
300
mA
Forward Surge Current
IFSM
600
mA
Power Dissipation
Pd
200
mW
RθJA
625
℃/W
TJ
125
℃
TSTG
-65-150
℃
Thermal resistance,junction to ambient air
Junction temperature
Storage temperature range
Electrical Characteristics @TA=25℃
Parameter
Symbol
Conditions
Min.
V (BR)R
IR=100μA
30
VF1
IF=0.1mA
240
mV
VF2
IF=1.0mA
320
mV
VF3
IF=10mA
400
mV
VF4
IF=30mA
500
mV
VF5
IF=100mA
1000
mV
Reverse current
IR
VR=25V
2.0
uA
Reverse recovery time
trr
5.0
ns
Capacitance between terminals
CT
10
pF
Reverse Breakdown Voltage
Forward voltage
IF=10mA, IR=10mA to 1mA ,
RL=100Ω
VR=1V,f=1MHz
Typ.
Max.
Unit
V
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
BAT54X
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05