SiBar Thyristor Surge Protectors TVAxxxNSA-L Series SiBar thyristor surge protection devices help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors assist designers to meet telecommunication and computer telephony equipment requirements and industry specifications. Features: Benefits: • RoHS compliant • Bidirectional crowbar transient voltage protection • Helps provide protection for sensitive telecom electronic equipment • Low leakage current • Voltage range: 170V – 275V with improved Vdrm/Vbo range • Low power dissipation • High off-state impedance • Fast, reliable operation • Low on-state voltage • No wear-out mechanisms • High surge capability • Assists designers to meet worldwide telecom standards • Short-circuit failure mode • Helps reduce warranty and service costs • DO-214AC SMA package • Easy installation • 10 x 1000 μs 50A surge rating • Helps improve power efficiency of equipment • Helps equipment comply with TIA-968, Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45 • Surface-mount technology Applications: • Modems • Set top boxes • Fax machines • POS systems • Phones, answering machines • Analog and digital linecards (xDSL, T1/E1...) • PBX systems • Other customer premise and central office network equipment requiring protection Document: SCD 27217 SiBar Thyristor Surge Protectors © 2007 Tyco Electronics Corporation. All rights Reserved. Status: Released 1 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB1 - Electrical Characteristics TVA170NSA-L 170 220 150 4 20 39 Off-State Current VD2=VDM (μA) 5 TVA220NSA-L 220 300 150 4 17 33 5 TVA275NSA-L 275 350 150 4 16 31 5 Part Number VDM Max. (V) VBO Max. (V) IH Min. (mA) VT Max. (V) C1 (Typ) 50VDC Bias C2 (Typ) 2VDC Bias Notes: All electrical characteristics are measured at 25°C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. VBO measured at 100V/µs. C1 measured at 1 MHz with a 50 VDC bias. C2 measured at 1MHz with a 2VDC bias. Table SB2 – Surge Current Rating TIA-968 Type A Part Number TVAxxxNSA-L Ipp(A) 5 x 320 µs Telcordia GR-1089* IEC61000-4-5 Ipp (A) Ipp (A) 10 x 1000 µs 2 x 10 µs Ipp (A) 8 x 20 µs ITU K.20/21/45* Type B Ipp(A) pp (A) 10 x 560 µs 10 x 160 µs 90 70 100 50 150 150 ITSM IPP (A) di/dt dV/dt 5 x 310 μs Min. (A/µs) (V/µs) (VOC: 10 x 700μs) (A) 90 22 500 2000 Notes: *Lightning current wave forms for applicable industry specification. ITSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C Document: SCD 27217 SiBar Thyristor Surge Protectors © 2007 Tyco Electronics Corporation. All rights Reserved. Status: Released 2 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB3 – Dimensions in Millimeters A Dimension B Min. TVAxxxNSA-L Max. TVAxxxNSA-L Max. Min. D Max. Min. Max. 4.06 4.57 2.25 2.92 1.90 2.41 1.25 1.65 (0.160) (0.180) (0.089) (0.115) (0.075) (0.095) (0.049) (0.065) H Dimension C Min. J K P S Min. Max. Min. Max. Min. Max. Ref Min 0.051 0.200 0.150 0.41 0.76 1.52 0.051 4.80 Max. 5.59 (0.002) (0.008) (0.006) (0.016) (0.030) (0.060) (0.0020) (0.189) (0.220) Notes: *D dimension is measured within dimension P. TVA series devices use industry standard SMA package type. All devices are bidirectional and may be oriented in either direction for installation Table SB4 – Physical Characteristics and Environmental Specifications Lead material Matte tin finish (-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) -55 to 150 Operating temperature (°C) -40 to 125 Junction temperature (°C) 175 Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260 Table SB5 – Reliability Tests Test High temperature, reverse bias Conditions +100°C, 50VDC bias Duration 1000 hours High humidity, high temperature, reverse bias 85% RH, +85°C, 50VDC bias 1000 hours High temperature storage life +150°C 1000 hours Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121°C, 15 PSI 96 hours Document: SCD 27217 SiBar Thyristor Surge Protectors © 2007 Tyco Electronics Corporation. All rights Reserved. Status: Released 3 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Document: SCD 27217 SiBar Thyristor Surge Protectors © 2007 Tyco Electronics Corporation. All rights Reserved. Status: Released 4 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB6 – Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part Description Tape and Reel Quantity Standard Package Part Marking Dimension A (Nom.) Dimension B (Nom.) Dimension C (Nom.) Agency Recognition* TVA170NSA-L 5,000 20,000 17NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) ** TVA220NSA-L 5,000 20,000 22NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) ** TVA275NSA-L 5,000 20,000 27NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) ** * UL 497B, File # E179610 **UL Pending 308 Constitution Drive, MS R21/2A Menlo Park, CA USA 94025-1164 Tel (800) 227-7040 (650) 361-6900 Fax (650) 361-2508 www.circuitproection.com www.circuitprotection.com.hk (Chinese) www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Document: SCD 27217 SiBar Thyristor Surge Protectors © 2007 Tyco Electronics Corporation. All rights Reserved. Status: Released 5 Rev: B Date: DECEMBER 12, 2007