TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • Unit: mm A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package. Maximum Ratings Transistor (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-collector voltage VECO −9.5 V Emitter-base voltage VEBO −9.5 V DC IC −1.2 A Pulse ICP −2.0 A Base current IB −120 mA Collector power dissipation (Q1 single-device operation) PC (Note 1) 400 mW Junction temperature Tj 150 °C Collector current Diode (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 0.7 A IFSM 7.0 A Peak one cycle surge forward current (sine wave) Power dissipation (D1 single-device operation) PD (Note 1) 320 mW Junction temperature Tj 125 °C JEDEC ― JEITA ― TOSHIBA 2-3T1F Weight: 0.011 g (typ.) Maximum Ratings for Transistor and Diode (Ta = 25°C) Characteristics Total power dissipation (simultaneous operation) Storage temperature range Symbol Rating Unit 600 mW −55~150 °C Symbol Max Unit Rth (j-a) (Note 1) 312 °C/W PT (Note 2) Tstg Thermal Resistance Characteristics (for transistor and diode) Characteristics Thermal resistance, junction to ambient (single-device operation) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, 2 Cu area: 645 mm ) 2 Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Total power dissipation value when two devices are operated at the same time 1 2004-09-02 TPC6D03 Electrical Characteristics (Ta = 25°C) Transistor Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −9.5 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO V Collector-emitter breakdown voltage DC current gain IC = −10 mA, IB = 0 −20 ⎯ ⎯ hFE (1) VCE = −2 V, IC = −0.15 A 140 ⎯ 350 hFE (2) VCE = −2 V, IC = −0.5 A 85 ⎯ ⎯ IC = −0.5 A, IB = −16.7 mA ⎯ ⎯ −0.17 V V Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage VBE (sat) Rise time Switching time tr Storage time tstg Fall time tf IC = −0.5 A, IB = −16.7 mA ⎯ ⎯ −1.10 See Figure 1 circuit diagram. ⎯ 40 ⎯ VCC ∼ − −12 V, RL = 24 Ω ⎯ 135 ⎯ IB1 = −IB2 = −16.7 mA ⎯ 37 ⎯ ns VCC IB2 Input RL 20 µs IB1 Output IB1 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Circuit Configuration 6 5 Q1 1 Marking 4 Lot code (month) D1 2 Part No. (or abbreviation code) Pin #1 3 H8C Product-specific code Lot code (year) Diode Characteristics Symbol Test Condition IF = 0.5 A Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Min Typ. Max Unit ⎯ 0.35 0.4 V Peak forward voltage VFM (1) Peak forward voltage VFM (2) IF = 0.7 A ⎯ 0.38 0.43 V Repetitive peak reverse voltage VRRM IR = 3 mA 30 40 ⎯ V Repetitive peak reverse current IRRM VR = 10 V ⎯ 25 100 µA VR = 10 V, f = 1 MHz ⎯ 19 ⎯ pF Junction capacitance Cj Handling Precaution Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design. 2 2004-09-02 TPC6D03 Transistor IC – VCE Common emitter Ta = 25°C Single nonrepetitive pulse −30 −20 Ta = 100°C −15 25 hFE −1.2 hFE – IC 1000 −10 DC current gain Collector current IC (A) −1.6 −8 −0.8 −6 −4 IB = −2 mA −0.4 100 −55 10 Common emitter VCE = −2 V Single nonrepetitive pulse 1 −0.001 −0.01 −0.1 0 0 0 −0.1 −0.2 −0.3 −0.4 −0.5 Collector-emitter voltage −0.6 VCE −0.7 (V) VCE (sat) – IC VBE (sat) – IC −10 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 25 −0.1 Ta = 100°C −55 −0.01 −0.001 −0.001 −0.01 −10 Collector current IC (A) −1 IC/IB = 30 Single nonrepetitive pulse −1 −0.1 −1 Common emitter IC/IB = 30 Single nonrepetitive pulse 25 −55 −1 Ta = 100°C −0.1 −0.001 −10 −0.01 Collector current IC (A) −0.1 −1 −10 Collector current IC (A) Safe Operating Area −10 IC (A) VCE = −2 V Single nonrepetitive pulse Collector current IC (A) Collector current −1.2 Common emitter −0.9 Ta = 100°C −0.6 25 −55 −0.3 0 0 −0.3 −0.6 −0.9 Base-emitter voltage VBE −1.2 −1.5 (V) *: Single nonrepetitive pulse Ta = 25°C Q1 single-device operation. When the device is mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) IC max (pulsed) * 10 ms* 1 ms* 100 µs* IC max (continuous) 100 ms* −1 10 s* DC operation (Ta = 25°C) −0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.62mm thick, Cu area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 Collector-emitter voltage 3 VCEO max IC – VBE −1.5 −10 VCE −100 (V) 2004-09-02 TPC6D03 Diode IF – VF PF (AV) – IF (AV) 10 0.5 Average forward power dissipation PF (AV) (W) Instantaneous forward current IF (A) DC 1 125 0.1 Ta = 25°C 0.01 0.4 90 0.3 60 α = 30° Rectangular waveform 0.2 0.1 0° α 360° Conduction angle α 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous forward voltage 1.4 0 0 1.6 VF (V) 0.2 0.4 0.6 Average forward current Ta max – IF (AV) 140 0.8 Cj – VR (typical) f = 1 MHz Ta = 25°C (pF) DC Cj 0° α 360° IF (AV) Conduction angle α 80 VR = 15 V 60 40 180 α = 120° 20 0 0 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 1.2 IF (AV) (A) 120 100 1.0 100 Rectangular waveform Junction capacitance Maximum allowable temperature Ta max (°C) 180 120 10 1.4 1 1 IF (AV) (A) 10 Reverse voltage 4 100 VR (V) 2004-09-02 TPC6D03 Diode Surge forward current (non-repetitive) 8 IR – Tj 100 Pulse measurement (one cell) IR (mA) 6 Reverse current Surge forward current IFSM (A) f = 50 Hz Ta = 25°C 4 2 (typical) 30 20 10 15 5 10 1 0.1 VR = 3 V 0 1 10 0.01 0 100 Number of cycles Junction temperature PR (AV) – VR Average reverse power dissipation PR (AV) (W) 1.2 1.0 0.6 100 Tj 150 (°C) (typical) Rectangular waveform 360° 0° VR 0.8 50 DC 300 α Conduction angle α Tj = 125°C 240 180 0.4 120 0.2 0 0 α = 60° 10 Reverse voltage 20 30 VR (V) 5 2004-09-02 TPC6D03 Transistor and Diode rth (j-a) – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 Curves should be applied in thermal limited area. 10 Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Either at Q1 or D1 single-operation 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Permissible Power Dissipation for Simultaneous Operation Permissible power dissipation for Q1 PC (W) 0.5 0.4 (0.25, 0.35) 0.3 0.2 DC operation 0.1 0 0 Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.1 0.2 0.3 0.4 0.5 Permissible power dissipation for D1 PD (W) 6 2004-09-02 TPC6D03 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-09-02