Inchange Semiconductor Product Specification BD204 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low saturation voltage ・Complement to type BD203 ・Wide area of safe operation APPLICATIONS ・For medium power switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter -base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak -12 A IBM Base current-Peak -3 A PT Total power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 2.08 ℃/W Inchange Semiconductor Product Specification BD204 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V Base-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V ICEO Collector cut-off current VCE=-30V ;IB=0; -0.2 mA ICBO Collector cut-off current VCB=-40V ;IE=0;Tj=150℃ -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 mA hFE DC current gain IC=-2A ; VCE=-2V 30 Transition frequency IC=-0.3A ; VCE=-3V 7.0 Base-emitter on voltage IC=-3A;VCE=-2V VBEsat fT VBE CONDITIONS 2 MIN TYP. MAX UNIT MHz -1.5 V Inchange Semiconductor Product Specification BD204 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3