isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD158 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) ·DC Current Gain: hFE = 30~240(Min) @ IC= 50mA APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 325 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak 1.0 A IB Base Current-Continuous 0.25 A PC Collector Power Dissipation TC=25℃ 20 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD158 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 325 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.0 V ICBO Collector Cutoff Current VCB= 325V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 50m A; VCE= 10V isc Website：www.iscsemi.cn CONDITIONS B MIN 30 MAX 240 UNIT