MA4FCP200 Silicon Flip Chip PIN Diode Features • • • • • • • • Case Style ODS-12641, 2, 3 Low Series Resistance Low Capacitance High Cut-off Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Rugged by Design Surface Mountable B E G A C Description D M/A-COM’s MA4FCP200 series is a silicon flip chip PIN diode fabricated with M/A-COM’s patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitics. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. 1. 2. Dimensions are in inches, () are in mm. Unless otherwise noted, tolerance are inches + .001” (millimeters + .025 mm). Schematic is for junction side up. 3. DIM. A B C D E F G INCHES MIN. MAX. 0.0082 0.0092 0.0141 0.0151 0.0035 Typ. .00038 0.0048 0.0085 0.0095 0.0023 0.0033 0.0048 0.0058 MILLIMETERS MIN. MAX. 0.209 0.233 0.359 0.383 0.090 Typ. 0.097 0.121 0.217 0.240 0.059 0.083 0.123 0.147 Electrical Specifications @ +25°C Symbol CT CT RS Total Capacitance Total Capacitance Series Resistance Test Conditions -10 Volts, 1 MHz 1 -10 Volts, 1 GHz 1, 3 50 mA, 100 MHz 2, 3 2, 3 Units Typ. Max. pF 0.020 0.030 pF 0.015 Ω 2.4 Ω 2.8 1.25 RS Series Resistance 50 mA, 1 GHz VF Forward Voltage 100 mA V VR Reverse Voltage 10 µA V IR Reverse Current -70 V µA RθJL TL 1. 2. 3. 4. Parameter Thermal Resistance Lifetime 10 mA / 6 mA Min. -70 1.50 -100 10 °C/W < 860 ns 100 Total capacitance is equivalent to the sum of junction capacitance C j and parasitic capacitance. Series resistance RS is equivalent to the total diode series resistance including the junction resistance Rj. RS and CP measures on an HP4291A with die mounted in an ODS-186 package with conductive silver epoxy. Steady-state R θJL measured with die mounted in an ODS-186 package with conductive silver epoxy. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 2.0 1 Silicon Flip Chip PIN Diode MA4FCP200 Handling Procedures Mounting Techniques The following precautions should be observed to avoid damaging these devices. These devices were designed for insertion onto hard or soft substrates with the junction side down. They can be mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. Cleanliness These devices should be handled in a clean environment. Do not attempt to clean die after installation. ESD These devices very susceptible to ESD and are rated Class 0 (0-199V) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kΩ ±1%]. Even though tested die pass 100V ESD, they must be handled in a static-free environment. Solder Die Attach Solder that does not scavenge gold, such as Indalloy #2, is recommended. Sn-Pb based solders are not recommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than 200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment. General Handling The protective polymer coating on the active areas of these devices provides scratch protection, particularly for the metal airbridge that contacts the anode. Die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. Epoxy Die Attach Assembly can be preheated to 125 to 150°C. Use a minimum amount of silver epoxy. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures should be kept below 200°C. Applications Absolute Maximum Ratings1 These devices are well suited as series diodes in broadband multi-throw switches through 26 GHz. In addition, the exceptional RC product makes them useful as shunt switches at millimeter frequencies. The low parasitic values of L and C make additional circuit tuning unnecessary. Parameter Forward Current2 Reverse Voltage Operating Temperature Storage Temperature Dissipated Power2 Mounting Temperature Absolute Maximum 125 mA -70 V -55°C to +150°C -55°C to +150°C 145 mW +235°C for 10 seconds 1. Exceeding these limits may cause permanent damage. 2. Steady-state R θJL measured with die mounted in an ODS-186 package with conductive silver epoxy.. Typical Performance Curves @ +25°C1 Typical Total Resistance RS vs. Forward Current and Frequency Typical Total Capacitance CP vs. Reverse Voltage and Frequency 5 0.025 4 0.020 10mA 3 50mA Ct (pF) Rs (ohms) 0V 2 0.015 0.010 -10V 100mA 1 0.005 0 0 200 400 600 800 1000 FREQUENCY (MHz) 0.000 0 200 400 600 800 1000 FREQUENCY (MHz) 1. RS and CP measures on an HP4291A with die mounted in an ODS-186 package with conductive silver epoxy. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 2.0 2