Inchange Semiconductor Product Specification BD643 Silicon NPN Dalington Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD644 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 150 A PC Collector power dissipation 62.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BD643 Silicon NPN Dalington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A, IB=0 45 V V(BR)CBO Collector-base breakdown voltage IC=5mA, IE=0 45 V V(BR)EBO Emitter-base breakdown voltage IE=2mA, IC=0 5 V Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VBE Base-emitter voltage IC=3A , VCE=3V 2.5 V ICBO Collector cut-off current VCB=VCBMax; IE=02 0.2 mA ICEO Collector cut-off current VCE=1/2 VCEMax; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=0.5A ; VCE=3V hFE-2 DC current gain IC=3A ; VCE=3V hFE-3 DC current gain IC=6A ; VCE=3V 750 VF Diode forward voltage IF=3A 1.8 V fT Transition frequency IC=3A;VCE=3V;f=1MHz 7 MHz VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 1500 750 Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD643