BC847BS NPN GENERAL PURPOSE DUAL TRANSISVOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking : 47S ABSOLUTE MAXIMUM RATINGS PARAMETER Symbol Value Uni ts C ollector - Emi tter Voltage VCEO 45 V C ollector - Base Voltage VCBO 50 V Emi tter - Base Voltage VEBO 6.0 V IC 100 mA C ollector C urrent - C onti nuous THERMAL CHARACTERISTICS PARAMETER Symbol Value Units Total Device Dissipation Per Device FR-5 Board (Note 1)TA=25OC Derate above 25OC 300 150 3.0 mW PD Thermal Resistance , Junction to Ambient RθJA 328 Junction Temperature TJ -55 to 150 O C Storage Temperature TSTG -55 to 150 O C mW/OC O C/W Note 1: FR-4 board 70 x 60 x 1mm. REV.0.1-MAR.9.2009 PAGE . 1 BC847BS ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t O F F C H A R A C T E R IS T IC S C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V(B R )C E O IC = 1 0 m A 45 - - V C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V(B R )C E S IC = 1 0 u A , V E B = 0 50 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V(B R )C B O IC = 1 0 u A 50 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V(B R )E B O IE = 1 0 u A 6 .0 - - V - - 15 5 .0 nA uA 200 - 450 - C o l l e c t o r C ut o f f C ur r e nt IC B O V C B =3 0 V, V C B = 3 0 V, TA = 1 5 0 O C hF E IC = 2 . 0 m A , V C E = 5 V O N C H A R A C T E R IS T IC S D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e VC E (S AT) IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A - - 0 .2 5 0 .6 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V B E ( S AT) IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A 0 .6 0 .8 - 0 .9 1 .0 V B a s e - E mi tte r Vo lta g e V B E (ON) IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V 580 - 660 - 700 770 mV IC = 1 0 m A , V C E = 5 . 0 V d c , f = 1 0 0 M H Z 100 - - MHZ V C B =1 0 V,f=1 .0 MHZ - - 4 .5 pF IC = 0 . 2 m A , V C E = 5 . 0 V d c , RS =2 .0 k Ω,f=1 .0 k HZ , B W =2 0 0 HZ - - 10 dB S M A L L - S IG N A L C H A R A C T E R IS T IC S C ur r e nt - G a i n- B a nd w i d t h P r o d uc t O ut p ut C a p a c i t a nc e N o i s e F i g ur e fT Cobo NF 6 5 4 1 2 3 Fig.54 REV.0.1-MAR.9.2009 PAGE . 2 BC847BS 2.0 1.0 V CE =10V O T A =25 C 1.5 O T A =25 C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN ELECTRICAL CHARACTERISTICS CURVE 1.0 0.8 0.6 0.4 V BE (on) @ V CE =10V 0.6 0.4 0.2 0.3 V CE (sat) @ I C /I B =10 0.2 0 0.5 0.2 1.0 5.0 2.0 10 20 100 50 200 0.1 0.2 0.3 0.5 0.7 1.0 Figure 1. Normalized DC Current Gain 5.0 7.0 10 20 30 50 70 100 Figure 2. "Saturation" and " On " Voltages 2.0 O qVB, TEMPER ATURE COEFFI CIENT (mA/ C) 1.0 O T A =25 C 1.6 200mA 1.2 I C= I C= 10mA 2 0mA 100mA 50mA 0.8 0.4 -55 OC to 125 OC 1.2 1.6 2.0 2.4 2.8 0 0.1 0.02 1.0 10 20 0.2 1.0 I B , BASE CURRENT (mA) Cio 30 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance REV.0.1-MAR.9.2009 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) O T A =25 C 50 100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 10 I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region C, CAPACITA NCE (pF) 2.0 3.0 I C , COLLECTOR CURRENT(mAdc) I C , COLLECTOR CURRENT(mAdc) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) V BE (sat) @ I C /I B =10 400 300 200 V CE =10V O T A =25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain-Bandwidth Product PAGE . 3 BC847BS ELECTRICAL CHARACTERISTICS CURVE r(t), TRANSIEN T THERMAL RESISTAN CE(NORM ALIZED) 1.0 D-0.5 0.2 0.1 0.1 0.05 0.02 0.01 Z q JA (t)=r(t) R q JA R q JA =328 OC/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) -TC=P (pk) R q JC (t) P(pk) t1 0.01 t2 DUTY CYCLE, D-t1/t2 SINGEL PULSE 0.001 0 10 1.0 100 1.0K t, TIME(ms) 10K 100K 1.0M Figure 7. Thermal Response I C , COLLECTO R CURRENT (mA) -200 3ms 1s -100 O T J =25 C O T A =25 C -50 BC558 BC557 BC556 -10 The safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon Tj(pk)=150 OC; Tc or Ta is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% prodided Tj(pk) < 150 OC. Tj(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary break-down. -5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -1.0 -10 -30 -45 -65 -100 V CE , COLLECTOR-EMITTER VOLTAGE(V) Figure 8. Active Region Safe Operating Area REV.0.1-MAR.9.2009 PAGE . 4 BC847BS MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-MAR.9.2009 PAGE . 5