GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 AM42-0039 GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 22% Typ. 50Ω Input/Output Broadband Matched High Performance Ceramic Bolt Down Package Description M/A-COM’s AM42-0039 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0039 employs a fully matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0039 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0039 is designed for use as an output stage or driver amplifier for VSAT transmitter systems. This amplifier is monolithic and requires a minimum of external components. M/A-COM’s AM42-0039 is fabricated using a mature 0.5 micron GaAs MESFET process. The chip is fully passivated for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications. Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 Ordering Information Part Number AM42-0039 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Freq. = 6.40 to 7.025 GHz Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature (with respect to TA=+25°C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic Abbv. GL VSWRIN VSWROUT PSAT PSAT PSAT IDD VGG ΙGG θJC f2 f3 Test Conditions PIN ≤ -10 dBm PIN ≤ -10 dBm PIN ≤ -10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. TA= -40°C to +70°C PIN = +10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. 25°C Heat Sink PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. Units dB — — dBm dB dB Min. 27 — — 31.5 — — Typ. 30 2.3:1 2.3:1 33.0 1.0 ±0.4 Max. — 2.7:1 — 34.0 1.5 — mA V mA °C/W dBc dBc 900 -2.4 — — — — 1050 -1.2 20 7 (Est.) -35 -45 1100 -0.4 40 — — — V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz 1,2,3,4 Absolute Maximum Ratings Parameter Input Power VDD VGG VDD - VGG IDD Channel Temperature Storage Temperature AM42-0039 4,5,6,7 Typical Bias Configuration Absolute Maximum +23 dBm +12 Volts -3 Volts 12 Volts 1700 mA -40°C to +85°C -65°C to +150°C 1. Exceeding any one or a combination of these limits may cause permanent damage. 2. Case Temperature (TC) = +25°C. 3. Nominal bias is obtained by first connecting -2 volts to pin 5 (VGG), followed by connecting +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc supply voltage will appear at the RF ports. 6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. V DD 3.3 µ F 10 0.01 µ F 3 8 AM42-0039 RF IN 1.0 µ F 2,4,7,9 GND RF OUT 5 V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name N/C GND RF In GND VGG N/C GND RF Out GND VDD Description No Connection DC and RF Ground RF Input DC and RF Ground Gate Supply No Connection DC and RF Ground RF Output DC and RF Ground Drain Supply V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 Typical Performance @ +25°C Output Power vs Frequency @ PIN = +10 dBm 25 9.0 8.5 Power Added Efficiency (PAE) vs. Frequency @ PIN = +10 dBm 20 25 PAE (%) POUT (dBm) 30 20 15 15 10 10 5 5 0 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 0 Frequency (GHz) Frequency (GHz) 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 Output Power vs. Input Power @ 6.7 GHz 25 Power Added Efficiency vs. Input Power @ 6.7 GHz 20 PAE (%) POUT (dBm) 8.0 Frequency (GHz) Frequency (GHz) 35 7.5 3.0 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 -40 7.0 -30 S22 6.5 -20 6.0 0 -10 S11 5.5 10 5.0 20 Input and Output Return Loss vs. Frequency 4.5 Magnitude (dB) Linear Gain (dB) 30 0 -5 -10 -15 -20 -25 -30 -35 -40 4.0 Linear Gain vs. Frequency 3.5 40 15 10 5 0 0 1 2 3 4 5 6 7 8 PIN (dBm) 9 10 11 12 13 14 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PIN (dBm) V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.