SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 60 0.0065 at VGS = 4.5 V 60 V(BR)DSS (V) 20 • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • OR-ing TO-220AB D DRAIN connected to TAB G G D S Top View S N-Channel MOSFET Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID IDM Pulsed Drain Current Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationb TA = 25 Operating Junction and Storage Temperature Range °Cd Unit V 60a 60a 120 IAS 50 EAS 125 A mJ c PD 120 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) d Junction-to-Case RthJA 40 RthJC 1.25 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 1 SUP60N02-4m5P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 20 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) ± 100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125 °C 50 VDS = 20 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V 100 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea a Forward Transconductance rDS(on) gfs 3 V nA µA A 0.0036 0.0045 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0068 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.008 VGS = 4.5 V, ID = 20 A 0.0052 VDS = 10 V, ID = 20 A 95 Ω 0.0065 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargeb Qg b Gate-Source Charge Qgs Gate-Drain Chargeb Qgd b Rise Timeb Turn-Off Delay Time 33 VDS = 10 V, VGS = 4.5 V, ID = 50 A b Fall Timeb td(off) 50 nC 18 7 0.75 td(on) tr pF 985 365 Rg Gate Resistance Turn-On Delay Time 5950 VGS = 0 V, VDS = 10 V, f = 1 MHz VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1.0 Ω tf 1.5 2.3 15 25 7 11 35 55 8 12 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cc IS 60 Pulsed Current ISM 100 Forward Voltagea VSD Continuous Current Reverse Recovery Time IF = 20 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 20 A, di/dt = 100 A/µs A 0.85 1.5 V 45 90 ns 1.7 3.4 A 0.039 0.155 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69821 S-80182-Rev. A, 04-Feb-08 SUP60N02-4m5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 4 V VGS = 10 thru 5 V 100 I D - Drain Current (A) I D - Drain Current (A) 90 60 80 60 TC = 25 °C 40 30 20 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 200 120 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = -55 °C 160 TC = 25 °C 80 TC = 125 °C 40 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0 0 0 10 20 30 40 0 50 20 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 7500 0.020 ID = 20 A Ciss 6000 0.016 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 40 ID - Drain Current (A) 0.012 0.008 TA = 150 °C 4500 3000 Coss 1500 0.004 TA = 25 °C Crss 0 0 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance Document Number: 69821 S-80182-Rev. A, 04-Feb-08 18 20 www.vishay.com 3 SUP60N02-4m5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 ID = 20 A VDS = 10 V 8 1.7 VDS = 16 V 6 4 r DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A 2 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0 0 20 40 60 0.5 - 50 80 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.5 100 TJ = 150 °C 0.0 VGS(th) Variance (V) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 ID = 5 mA - 0.5 ID = 250 µA - 1.0 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 - 1.5 - 50 1.2 - 25 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage Source-Drain Diode Forward Voltage 33 100 32 30 I DAV (A) Typical Drain-Source Brakdown Voltage ID = 1 mA 31 29 TJ = 25 °C TJ = 150 °C 10 28 27 26 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Typical Drain-source Brakdown Voltage vs. Junction Temperature www.vishay.com 4 175 1 0.00001 0.0001 0.001 0.01 0.10 1 t in (s) Single Pulse Avalanche Current vs. Time Document Number: 69821 S-80182-Rev. A, 04-Feb-08 SUP60N02-4m5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 1000 Limited by rDS(on)* 120 10 µs, 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 90 Package Limited 60 1 ms 10 ms 10 100 ms 1 s, 10 s 1 30 TA = 25 °C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Drain Current vs. Ambient Temperature Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69821. Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1