BLF4G20LS-130 UHF power LDMOS transistor Rev. 01 — 1 June 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Tcase = 25 °C; IDq = 900 mA; unless otherwise specified; in a class-AB production test circuit. Mode of operation f VDS PL PL(AV) Gp ηD ACPR400 ACPR600 EVMrms IMD3 (MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (%) (dBc) CW 1930 to 1990 28 130 - 14.5 50 - - - - GSM EDGE 1930 to 1990 28 - 60 14.8 36 −62[1] −73[1] 2.1 - 2-tone 1930 to 1990 28 - 65 14.6 38.5 - - - −30 [1] ACPR400 and ACPR600 at 30 kHz resolution bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical GSM EDGE performance at frequencies of 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: u Average output power = 60 W u Power gain = 14.8 dB u Efficiency = 36 % u ACPR400 = −62 dBc u ACPR600 = −73 dBc u EVMrms = 2.1 % n Easy power control n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (1800 MHz to 2000 MHz) n Internally matched for ease of use BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 1.3 Applications n RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name BLF4G20LS-130 - Description Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 15 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF4G20LS-130_1 Product data sheet Min © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 2 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; 0.49 0.58 K/W PL = 50 W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 230 mA 2.5 2.9 3.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 2.65 3.15 3.65 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 35 42 - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 11 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 7.5 A - 0.065 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 3 pF - 7. Application information Table 7. Application information Mode of operation: 2-tone (200 kHz tone spacing); f1 = 1930 MHz; f2 = 1990 MHz; VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(PEP) = 130 W 13 14.6 - dB RLin input return loss PL(PEP) = 130 W - −10 −7 dB ηD drain efficiency PL(PEP) = 130 W 34.5 38.5 - % IMD3 third order intermodulation distortion PL(PEP) = 130 W - −30 −27 dBc IMD5 fifth order intermodulation distortion PL(PEP) = 130 W - −39.5 −35.5 dBc IMD7 seventh order intermodulation distortion PL(PEP) = 130 W - −58.5 −54 dBc 7.1 Ruggedness in class-AB operation The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 130 W (CW); f = 1990 MHz. BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 3 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 7.2 One-tone CW 001aag526 16 60 Gp Gp (dB) ηD (%) ηD 14 40 12 20 10 0 40 80 0 160 120 PL (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 4 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 7.3 Two-tone CW 001aag527 16 ηD (%) Gp (dB) Gp 15 001aag528 0 50 IMD (dBc) 40 −20 IMD3 ηD 30 14 IMD5 −40 13 20 12 10 IMD7 −60 11 0 20 40 60 80 −80 0 100 PL (W) 0 VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. 20 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of load power; typical values Fig 3. Intermodulation distortion as a function of average load power; typical values 001aag529 0 IMD3 (dBc) −20 (1) (2) −40 (3) (4) −60 −80 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; Tcase = 25 °C; f = 1990 MHz. (1) IDq = 800 mA. (2) IDq = 900 mA. (3) IDq = 1000 mA. (4) IDq = 1100 mA. Fig 4. Third order intermodulation distortion as function of average load power; typical values BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 5 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 7.4 GSM EDGE 001aag530 16 50 ηD (%) Gp (dB) Gp 15 40 ηD 001aag531 −50 ACPR (dBc) −60 14 30 13 20 ACPR400 −70 ACPR600 10 12 11 0 20 40 60 80 0 100 PL (W) −80 0 VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. 001aag532 EVM (%) 40 60 80 100 PL (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. Fig 5. GSM EDGE power gain and drain efficiency as functions of load power; typical values 16 20 Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as functions of load power; typical values 001aag533 −54 ACPR (dBc) EVMM 5 EVM (%) −58 4 12 −62 3 ACPR400 8 −66 2 EVMrms 4 −70 1 EVMrms −74 0 0 20 40 60 80 100 PL (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz. Fig 7. GSM EDGE rms EVM and peak EVM as functions of load power; typical values 0 0 40 ηD (%) 60 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz. Fig 8. GSM EDGE ACPR and rms EVM as functions of drain efficiency; typical values BLF4G20LS-130_1 Product data sheet 20 © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 6 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 8. Test information C10 VDD W1 C2 C7 R1 C3 C9 C1 C5 C6 C4 BLF4G20LS-130 BLF4G20LS-130 input - PCS rev. 1 output - PCS rev. 1 001aag534 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. See Table 8 for list of components. Fig 9. Component layout for 1930 MHz to 1990 MHz production test circuit Table 8. List of components (see Figure 9) Component Description Value Dimensions C1, C3, C5, C7 chip capacitor 11 pF C2, C9 tantalum capacitor 10 µF C4 chip capacitor 0.8 pF [1] C6 chip capacitor 0.1 pF [1] C8 American Technical Ceramics (ATC) chip capacitor 1 µF C10 Philips electrolytic capacitor 220 µF; 35 V R1 Philips chip resistor 5.1 Ω W1 hand made wire [1] Remarks [1] 1812X7R105KL2AB 0603 5 mm American Technical Ceramics type 100B or capacitor of same quality. BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 7 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 10. Package outline SOT502B BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 8 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description ACPR Adjacent Channel Power Ratio CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency RMS Root Mean Square VSWR Voltage Standing Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF4G20LS-130_1 20070601 Product data sheet - - BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 9 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF4G20LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 June 2007 10 of 11 BLF4G20LS-130 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5 GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 June 2007 Document identifier: BLF4G20LS-130_1