TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
APT50GP60LDL(G)
600V, 50A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT®
The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Features
Typical Applications
• Low Conduction Loss
• Low Gate Charge
• SSOA Rated
• Induction Heating
• RoHS Compliant
• Welding
G
• Medical
• Low forward Diode Voltage (VF)
• High Power Telecom
• Ultrasoft Recovery Diode
• Resonant Mode Phase Shifted
Bridge
Symbol
E
C
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
UNIT
Ratings
7
@ TC = 25°C
Volts
150
72
1
Amps
190
Switching Safe Operating Area @ TJ = 150°C
190A @ 600V
Total Power Dissipation
Watts
625
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
2.1
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
3
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
525
2
Gate-Emitter Leakage Current (VGE = ±20V)
Volts
µA
2750
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Units
nA
11-2008
MIN
Rev B
Characteristic / Test Conditions
052-6354
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GP60LDL(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
VGE = 0V, VCE = 25V
465
f = 1 MHz
30
Gate Charge
7.5
VGE = 15V
165
VCE = 300V
40
I C = 50A
50
TJ = 150°C, R G = 4.3Ω, VGE =
15V, L = 100µH,VCE = 600V
36
Turn-off Delay Time
VGE = 15V
85
I C = 50A
60
Turn-on Switching Energy
RG = 4.3Ω
4
Turn-on Delay Time
19
Current Rise Time
VCC = 400V
36
Turn-off Delay Time
VGE = 15V
115
I C = 50A
Current Fall Time
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
ns
µJ
55
ns
85
465
RG = 4.3Ω
44
Turn-on Switching Energy
nC
635
Inductive Switching (125°C)
Eon2
V
835
6
Eon1
pF
465
TJ = +25°C
5
UNIT
A
Current Rise Time
Current Fall Time
MAX
190
19
Turn-off Switching Energy
tf
5700
VCC = 400V
Eoff
td(off)
Capacitance
Inductive Switching (25°C)
Turn-on Switching Energy (Diode)
tr
TYP
Turn-on Delay Time
Eon2
td(on)
MIN
TJ = +125°C
µJ
1260
6
1060
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.20
RθJC
Junction to Case (DIODE)
.63
WT
Package Weight
6.10
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
052-6354
Rev B
11-2008
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT50GP60LDL(G)
70
70
60
60
IC, COLLECTOR CURRENT (A)
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
10
0
FIGURE 1, Output Characteristics(VGE = 15V)
70
60
50
TJ = -55°C
TJ = 25°C
30
TJ = 125°C
20
10
0
0
IC = 50A
2.0
IC = 25A
1.5
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
2.5
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
J
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
20
40
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
IC = 100A
2.5
IC = 50A
2
IC = 25A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
200
IC, DC COLLECTOR CURRENT(A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I = 50A
C
T = 25°C
33.5
FIGURE 3, Transfer Characteristics
IC = 100A
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
14
0
1
2 3
4 5 6
7 8
9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
3.5
TJ = 125°C
10
FIGURE 2, Output Characteristics (VGE = 10V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
80
40
TJ = 25°C
20
16
250µs PULSE
TEST<0.5 % DUTY
CYCLE
90
TJ = -55°C
30
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
100
40
180
160
140
120
100
80
60
Lead Temperature
Limited
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
11-2008
40
50
Rev B
50
052-6354
IC, COLLECTOR CURRENT (A)
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
140
VGE = 15V
20
15
10
5 VCE = 400V
TJ = 25°C or 125°C
0
RG = 4.3Ω
L = 100µH
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
120
100
VGE =15V,TJ=125°C
80
60
40
20 VCE = 400V
RG = 4.3Ω
0
20
VGE =15V,TJ=25°C
L = 100µH
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
90
120
RG = 4.3Ω, L = 100µH, VCE = 400V
20
RG = 4.3Ω, L = 100µH, VCE = 400V
80
TJ = 125°C, VGE = 15V
100
tf, FALL TIME (ns)
tr, RISE TIME (ns)
70
60
50
40
30
80
60
TJ = 25°C, VGE = 15V
40
TJ = 25 or 125°C,VGE = 15V
20
20
10
0
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
3500
3500
TJ = 125°C
G
3000
2500
2000
1500
1000
500
TJ = 25°C
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
4000
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
G
2500
TJ = 125°C
2000
1500
1000
TJ = 25°C
500
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
4000
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
5000
Eon2,100A
4000
Eoff,100A
3000
2000
Eon2,50A
1000 E 25A
on2,
0
Eoff,50A
Eoff,25A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
11-2008
Rev B
3000
0
0
052-6354
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
3500
G
Eon2,100A
3000
Eoff,100A
2500
2000
1500
1000
Eon2,50A
500
Eon2,25A
Eoff,50A
0
Eoff,25A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
200
Cies
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
10,000
1,000
500
Coes
100
50
180
160
140
120
100
80
60
Cres
40
20
10
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.20
0.16
0.7
0.12
0.5
Note:
0.08
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
D = 0.9
SINGLE PULSE
0.04
t1
t2
t
0.1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.00463
0.0193
0.00218
0.0658
0.0142
0.0658
.1055
0.0142
.346
Power
(watts)
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
50
10
T = 125°C
J
T = 75°C
C
D = 50 %
= 667V
V
CE
R = 5Ω
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
G
10 20
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
11-2008
0.00908
100
Rev B
RC MODEL
052-6354
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
220
APT50GP60LDL(G)
APT50DL60
10%
Gate Voltage
TJ = 125 °C
td(on)
V CE
IC
V CC
Collector Current
tr
90%
A
5%
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
tf
Collector Voltage
90%
0
Switching Energy
10%
Collector Current
Rev B
11-2008
Figure 23, Turn-off Switching Waveforms and Definitions
052-6354
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
td(off)
10%
TJ = 125 °C
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT50GP60LDL(G)
Maximum Average Forward Current (TC = 124°C, Duty Cycle = 0.5)
UNIT
50
RMS Forward Current (Square wave, 50% duty)
150
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
MAX
IF = 50A
1.25
1.6
IF = 100A
2.0
IF = 50A, TJ = 125°C
UNIT
Volts
1.25
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
52
trr
Reverse Recovery Time
-
399
Qrr
Reverse Recovery Charge
-
1498
-
9
-
649
ns
-
3734
nC
-
13
-
284
ns
-
5134
nC
-
34
Amps
Qrr
IRRM
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 50A, diF/dt = -1000A/µs
Reverse Recovery Charge
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
-
-
Amps
Amps
0.7
0.6
0.5
0.4
0.3
Note:
0.2
t1
t2
0.1
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
0.316
Dissipated Power
(Watts)
11-2008
trr
Reverse Recovery Charge
nC
0.00467
0.312
0.1483
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Rev B
IRRM
IF = 50A, diF/dt = -200A/µs
PDM
Qrr
Reverse Recovery Time
ZEXT
trr
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
ZθJC, THERMAL IMPEDANCE (°C/W)
IRRM
IF = 50A, diF/dt = -200A/µs
ns
052-6354
Symbol
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
700
120
TJ= 125°C
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
100
TJ= 55°C
80
TJ= 25°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
100A
R
7000
6000
50A
5000
25A
4000
3000
2000
1000
0
0.8
CJ, JUNCTION CAPACITANCE (pF)
11-2008
Rev B
200
100
40
T = 125°C
J
V = 400V
R
50A
100A
35
30
25A
25
20
15
10
5
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
70
IRRM
50
40
30
20
0.2
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
500
052-6354
25A
300
60
0.4
0
400
tRR
QRR
0.6
50A
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
500
45
T = 125°C
J
V = 400V
R
600
0
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
0
8000
T = 125°C
J
V = 400V
100A
TJ= 150°C
450
400
350
300
250
200
150
100
50
0
0
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
Duty cycle = 0.5
TJ = 126°C
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
1
4
6
Zero
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
3
2
0.25 IRRM
Slope = diM/dt
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Collector (Cathode)
Emitter (Anode)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
11-2008
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Rev B
2.29 (.090)
2.69 (.106)
052-6354
Collector
(Cathode)
5.79 (.228)
6.20 (.244)