BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 5 and 6) Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • • SOT-363 TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Thermal Characteristics Symbol VDSS VDGR VGSS ID Continuous Continuous Value -50 -50 ±20 -130 Units V V V mA Value 300 417 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS -75 ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 µA µA nA ±10 nA VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS -50 ⎯ ⎯ ⎯ ⎯ VGS(th) RDS (ON) gFS -0.8 ⎯ 0.05 -1.6 6 ⎯ -2.0 10 ⎯ V Ω S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 18 ⎯ ⎯ ns ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: V Test Condition 1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Short duration pulse test used to minimize self-heating effect. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS84DW Document number: DS30204 Rev. 13 - 2 1 of 3 www.diodes.com November 2007 © Diodes Incorporated BSS84DW -600 400 TA = 25°C ID, DRAIN-SOURCE CURRENT (mA) PD , POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 -500 -400 -300 -200 -100 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 25 -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 10 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 -0.0 0 15 9 8 7 6 5 4 3 2 T A = 125°C 1 0 -5 -2 -3 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage -1 TA = 25°C 0 -1 -5 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE (Ω) 12 RDS(ON), ON-RESISTANCE (Ω) -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 0 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 5.0 VGS = -6V VGS = -8V VGS = -10V 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature BSS84DW Document number: DS30204 Rev. 13 - 2 2 of 3 www.diodes.com 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 -1.0 November 2007 © Diodes Incorporated BSS84DW Ordering Information (Note 7) Part Number BSS84DW-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 YM 1999 K 2000 L 2001 M K84 Date Code Key Year 1998 Code J K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2002 N 2003 P 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS84DW Document number: DS30204 Rev. 13 - 2 3 of 3 www.diodes.com November 2007 © Diodes Incorporated