Inchange Semiconductor Product Specification BUX40 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 125 V VEBO Emitter-base voltage Open collector 7 V 20 A 28 A 4 A 120 W IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.46 ℃/W tp=10ms TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUX40 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0 125 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=15 A;IB=1.88 A 1.6 V Base-emitter saturation voltage IC=15 A;IB=1.88 A 2.0 V ICEX Collector cut-off current VCE=160V;VBE=-1.5V TC=125℃ 1.0 5.0 mA ICEO Collector cut-off current VCE=100V;IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=4V 15 hFE-2 DC current gain IC=15A ; VCE=4V 8 Transition frequency IC=1A ; VCE=15V; f=10MHz VBEsat fT CONDITIONS MIN TYP. MAX UNIT 45 8.0 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=15A ;IB1=1.88A VCC=30V IC=15A ;IB1=-IB2=1.88A VCC=30V 2 1.2 μs 1.0 μs 0.4 μs Inchange Semiconductor Product Specification BUX40 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3