BTA208X-1000C0 High commutation three-quadrant triacs Rev. 01 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description Passivated high voltage, high commutation triac in a full pack, plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 1.2 Features and benefits 3Q technology with superior commutation performance for improved noise immunity Enhanced immunity to voltage transients and noise High false trigger immunity Isolated package Very high blocking voltage capability of 1000 V 1.3 Applications General purpose motor control Reversible induction motor control 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 1000 V VDRM repetitive peak off-state voltage ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4 and 5 - - 65 A IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; see Figure 3, 1 and 2 - - 8 A VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 5 11 35 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 5 14 35 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 5 25 35 mA Static characteristics IGT gate trigger current BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 T1 G sym051 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name BTA208X-1000C0 TO-220F Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current I2t I2t for fusing dIT/dt rate of rise of on-state current Conditions Min Max Unit - 1000 V full sine wave; Th ≤ 73 °C; see Figure 3, 1 and 2 - 8 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4 and 5 - 65 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 71 A tp = 10 ms; sine-wave pulse - 21 A2s IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 2 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 003aaa970 25 IT(RMS) 003aaa969 10 IT(RMS) (A) 73 °C (A) 20 8 15 6 10 4 5 2 0 10−2 10−1 0 −50 1 10 surge duration (s) Fig 2. Fig 1. 0 50 100 Th (°C) 150 RMS on-state current as a function of heatsink temperature; maximum values RMS on-state current as a function of surge duration; maximum values 003aaa967 12 Ptot (W) 10 8 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° 71 Th(max) (°C) 80 90° α 89 60° 6 98 30° 4 107 2 116 0 0 2 4 6 125 10 8 IT(RMS) (A) Fig 3. Total power dissipation as a function of RMS on-state current; maximum values BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 3 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 003aaa968 80 ITSM (A) 60 40 ITSM IT 20 t T Tj(init) = 25 °C max 0 102 10 1 103 number of cycles Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aab121 103 ITSM IT t ITSM (A) tp Tj(init) = 25 °C max (1) 102 10 10−2 10−1 1 102 10 tp (ms) Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 4 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-h) thermal resistance from full cycle or half cycle with heatsink junction to heatsink compound; see Figure 6 thermal resistance from junction to ambient Rth(j-a) Min Typ Max Unit - - 4.5 K/W - - 6.5 K/W - 55 - K/W 003aaa972 10 Zth(j-h) (1) (K/W) (2) 1 (3) (4) 10−1 P t tp 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 5 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 7. Characteristics Table 7. Symbol Characteristics Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 5 11 35 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 5 14 35 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 5 25 35 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 - 25 50 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 - 48 75 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 - 30 50 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; see Figure 9 - 20 50 mA VT on-state voltage IT = 10 A; Tj = 25 °C; see Figure 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V ID off-state current VD = 1000 V; Tj = 125 °C - 0.1 0.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 670 V; Tj = 125 °C; exponential waveform; gate open circuit 1500 4000 - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; gate open circuit; see Figure 12 12 32 - A/ms tgt gate-controlled turn-on time ITM = 12 A; VD = 1000 V; IG = 0.1 A; dIG/dt = 5 A/µs - 2 - µs BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 6 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 003aac888 3 001aab100 3 (1) IGT IL IGT(25°C) IL(25°C) 2 2 (2) (3) 1 0 −50 1 0 50 100 0 −50 150 Tj (°C) Fig 8. Fig 7. 0 50 100 150 Tj (°C) Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 001aab099 3 003aaa971 25 IT (A) IH 20 IH(25°C) 2 15 10 1 5 (1) 0 −50 Fig 9. (2) (3) 0 0 50 100 150 0 Tj (°C) 1 2 VT (V) 3 Normalized holding current as a function of junction temperature Fig 10. On-state current as a function of on-state voltage BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 7 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 001aab101 1.6 VGT 003aaa973 103 dIcom/dt (A/ms) VGT(25°C) 102 1.2 typ min 0.8 0.4 −50 10 1 0 50 100 150 20 Tj (°C) Fig 11. Normalized gate trigger voltage as a function of junction temperature 100 Tj (°C) 140 Fig 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values BTA208X-1000C0_1 Product data sheet 60 © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 8 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 13. Package outline SOT186A (TO-220F) BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 9 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA208X-1000C0_1 20090903 Product data sheet - - BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 10 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 10. Legal information 10.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BTA208X-1000C0_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 September 2009 11 of 12 BTA208X-1000C0 NXP Semiconductors High commutation three-quadrant triacs 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 September 2009 Document identifier: BTA208X-1000C0_1