BST39,BST40 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Current z High Voltage 1. BASE 2. COLLECTOR APPLICATIONS z General Purpose Switching and Amplification 3. EMITTER MARKING:BCT39:AT1 BCT40:AT2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value BST39 400 BST40 300 BST39 350 BST40 250 Emitter-Base Voltage VEBO Unit V V 5 V IC Collector Current 100 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min BST39 400 BST40 300 BST39 350 BST40 250 Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 Collector cut-off current ICBO VCB=300V,IE=0 20 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=10V, IC=20mA 0.5 V Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob VCB=10V, IE=0, f=1MHz V 5 V 40 IC=50mA,IB=4mA VCE=10V,IC=10mA, f=100MHz V 70 MHz 2 pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５