SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0035 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package ID (A) 110 a 0.005 @ VGS = 4.5 V APPLICATIONS D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Current D DC/DC Converters D TO-263 G G D S Top View S SUM110N06-04L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 125_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_C)d Unit V 110a 110a A 440 IAR 75 EAR 280 mJ 437.5c PD 3.7 W TJ, Tstg –55 to 200 _C Symbol Limit Unit Junction-to-Ambient—PCB Mountd RthJA 40 Junction-to-Case (Drain) RthJC 0.4 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71704 S-20417—Rev. B, 08-Apr-02 www.vishay.com 1 SUM110N06-04L New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) V 3 VDS = 48 V, VGS = 0 V, TJ = 200_C Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 10 V 10 120 VGS = 10 V, ID = 30 A 0.0028 VGS = 4.5 V, ID = 20 A 0.004 VDS = 15 V, ID = 30 A mA 0.0035 0.005 W 0.0058 VGS = 10 V, ID = 30 A, TJ = 200_C gfs m mA A VGS = 10 V, ID = 30 A, TJ = 125_C Forward Transconductancea nA 0.0088 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 700 Total Gate Chargec Qg 150 Gate-Source Chargec Qgs 25 Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 20 30 tr 135 200 80 120 150 220 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 110 A 1050 pF 220 nC 45 VDD = 30 V, RL = 0.4 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 440 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 110 A, VGS = 0 V 1.1 1.4 V 75 120 ns IF = 110 A, di/dt = 100 A/ms 2.5 5 A 0.09 0.25 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71704 S-20417—Rev. B, 08-Apr-02 SUM110N06-04L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 5 V 200 I D – Drain Current (A) I D – Drain Current (A) 200 4V 150 100 50 150 100 TC = 125_C 50 25_C 3V –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.006 350 TC = –55_C r DS(on) – On-Resistance ( W ) g fs – Transconductance (S) 300 25_C 250 200 125_C 150 100 50 0 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 0.001 0.000 0 20 40 60 80 100 0 120 20 40 ID – Drain Current (A) 80 100 120 250 300 ID – Drain Current (A) Capacitance Gate Charge 12000 20 V GS – Gate-to-Source Voltage (V) 10000 C – Capacitance (pF) 60 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VGS = 30 V ID = 85 A 16 12 8 4 0 12 24 36 48 VDS – Drain-to-Source Voltage (V) Document Number: 71704 S-20417—Rev. B, 08-Apr-02 60 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com 3 SUM110N06-04L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C 0.5 0.0 –50 –25 0 25 50 75 1 0 100 125 150 175 200 0.3 TJ – Junction Temperature (_C) IAV (A) @ TA = 25_C V(BR)DSS (V) I Dav (a) 75 10 IAV (A) @ TA = 150_C 0.0001 0.001 tin (Sec) ID = 10 mA 70 65 0.1 www.vishay.com 1.2 80 100 0.00001 0.9 Drain Source Breakdown vs. Junction Temperature 1000 1 0.6 VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 4 TJ = 25_C 10 0.01 0.1 60 –50 –25 0 25 50 75 100 125 150 175 200 TJ – Junction Temperature (_C) Document Number: 71704 S-20417—Rev. B, 08-Apr-02 SUM110N06-04L New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 120 10 ms 100 I D – Drain Current (A) I D – Drain Current (A) 100 80 60 40 Limited by rDS(on) 1 ms 10 10 ms 100 ms dc 1 20 0 100 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) Document Number: 71704 S-20417—Rev. B, 08-Apr-02 www.vishay.com 5