SS9016 SS9016 AM Converter, FM/RF Amplifier of Low Noise. • High total power dissipation. (PT=400mW) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 25 mA PC Collector Dissipation 400 TJ Junction Temperature 150 mW °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100µA, IE =0 30 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 4 ICBO Collector Cut-off Current VCB =30V, IE =0 IEBO Emitter Cut-off Current VEB =3V, IC =0 hFE DC Current Gain VCE =5V, IC =1mA VCE (sat) Collector-Emitter Saturation Voltage VBE (on) Base-Emitter On Voltage Cob 28 V 100 nA 100 nA 90 198 IC =10mA, IB =1mA 0.1 0.3 VCE =5V, IC =1mA 0.72 Output Capacitance VCB =10V, IE =0 f=1MHz 1.2 fT Current Gain Bandwidth Product VCE =5V, IC =1mA NF Noise Figure VCE =5V, IC =1.0mA f=100MHz, RS=50Ω 400 V V 1.6 pF 620 3.0 MHz 5.0 dB hFE Classification Classification D E F G H I hFE 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198 ©2000 Fairchild Semiconductor International Rev. A, February 2000 SS9016 Typical Characteristics 1000 20 IB = 100µ A 16 IB = 90µ A 14 IB = 80µ A 12 IB = 70µ A 10 IB = 60µ A 8 IB = 50µ A IB = 40µ A 6 IB = 30µ A 4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 5V IB = 110µ A 18 100 IB = 20µ A 2 IB = 10µ A 0 10 0 2 4 6 8 10 12 14 16 18 1 20 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain 10 IC = 10 IB 1 0.1 V BE(sat) V CE(sat) 0.01 0.1 VCE = 5V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 1 10 1 0.1 0.0 10 1.8 f = 1MHz IE = 0 1.4 1.2 1.0 0.8 0.6 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 0.4 0.6 0.8 1.0 1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1.6 0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE 10 10000 VCE = 5V 1000 100 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A, February 2000 SS9016 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E