IL1/IL2/IL5 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Current transfer ratio (see order information) A 1 6 B C 2 5 C • Lead (Pb)-free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Isolation test voltage 5300 VRMS i179004 AGENCY APPROVALS DESCRIPTION The IL1/IL2/IL5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/IL2/IL5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-5 available with option 1 • BSI IEC 60950; IEC 60065 ORDER INFORMATION PART REMARKS IL1 IL2 IL5 IL1-X006 IL2-X006 IL2-X009 IL5-X009 CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 CTR > 50 %, DIP-6 CTR > 20 %, DIP-6 400 mil (option 6) CTR > 100 %, DIP-6 400 mil (option 6) CTR >100 %, SMD-6 (option 9) CTR > 50 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT VR IF 6.0 60 2.5 100 1.33 V mA A mW mW/°C INPUT Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 °C OUTPUT IFSM Pdiss IL1 BVCEO 50 V IL2 BVCEO 70 V IL5 BVCEO 70 V Emitter base breakdown voltage BVEBO 7.0 V Collector base breakdown voltage BVCBO 70 V IC 50 mA IC 400 mA Pdiss 200 mW 2.6 mW/°C Collector emitter breakdown voltage Collector current Power dissipation t < 1.0 ms Derate linearly from 25 °C www.vishay.com 294 For technical questions, contact: [email protected] Document Number: 83612 Rev. 1.5, 08-May-08 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART Vishay Semiconductors SYMBOL VALUE UNIT Ptot 250 mW 3.3 mW/°C 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm COUPLER Package power dissipation Derate linearly from 25 °C Isolation test voltage (between emitter and detector referred to standard climate 23 °C/50 % RH, DIN 50014) VISO Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 40 to + 150 °C Operating temperature Tamb - 40 to + 100 °C Tj 100 °C Tsld 260 °C Isolation resistance Junction temperature Soldering temperature (2) 2.0 mm from case bottom Ω Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.25 1.65 UNIT INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current Capacitance 6.0 30 V V VR = 6.0 V IR 0.01 VR = 0 V, f = 1.0 MHz CO 40 pF Rthjl 750 K/W Thermal resistance junction to lead 10 µA OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Collector base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 8.5 pF Emitter base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 11 VCE = 10 V ICEO 5.0 Collector emitter leakage voltage pF 50 ICE = 1.0 mA, IB = 20 µA VCEsat 0.25 Base emitter voltage VCE = 10 V, IB = 20 µA VBE 0.65 DC forward current gain VCE = 10 V, IB = 20 µA hFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 µA hFEsat 120 400 600 Collector emitter saturation voltage Thermal resistance junction to lead Rthjl nA V V 500 K/W COUPLER Capacitance (input to output) Insulation resistance VI-O = 0 V, f = 1.0 MHz CIO 0.6 pF VI-O = 500 V RS 1014 Ω Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83612 Rev. 1.5, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 295 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER Current transfer ratio (collector emitter saturated) Current transfer ratio (collector emitter) Current transfer ratio (collector base) TEST CONDITION PART SYMBOL IL1 CTRCEsat 75 % IL2 CTRCEsat 170 % IL5 CTRCEsat IL1 CTRCE 20 80 300 IL2 CTRCE 100 200 500 % IL5 CTRCE 50 130 400 % IL1 CTRCB 0.25 % IL2 CTRCB 0.25 % IL5 CTRCB 0.25 % TEST CONDITION PART SYMBOL VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 IF = 10 mA, VCE = 0.4 V IF = 10 mA, VCE = 10 V IF = 10 mA, VCB = 9.3 V MIN. TYP. MAX. 100 UNIT % % SWITCHING CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNIT NON-SATURATED Current time Delay time Rise time Storage time Fall time Propagation H to L Propagation L to H 20 IL1 IF 4.0 IL5 10 IL1 0.8 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output IL2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 tD IL5 1.7 mA µs 1.7 1.9 IL1 tr IL5 2.6 µs 2.6 0.2 IL1 ts IL5 0.4 µs 0.4 1.4 IL1 tf IL5 2.2 µs 2.2 0.7 IL1 tPHL IL5 1.2 µs 1.1 1.4 IL1 tPLH IL5 2.3 µs 2.5 SATURATED 20 IL1 Current time IF IL5 0.8 tD IL5 www.vishay.com 296 µs 1.2 tr IL5 2.0 µs 7.0 7.4 IL1 Storage time 1.0 1.7 IL1 Rise time mA 10 IL1 Delay time 5.0 tS IL5 For technical questions, contact: [email protected] 5.4 µs 4.6 Document Number: 83612 Rev. 1.5, 08-May-08 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V IL2 SYMBOL MIN. TYP. MAX. UNIT SATURATED 7.6 IL1 Fall time 13.5 tf IL5 1.6 IL1 Propagation H to L VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V Propagation L to H µs 20 5.4 tPHL IL5 2.6 IL1 8.6 IL2 µs 7.4 tPLH IL5 µs 7.2 COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Common mode rejection output high VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA |CMH| 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA |CML| 5000 V/µs CCM 0.01 pF Common mode coupling capacitance TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IF VCC = 5 V IF = 10 mA tPHL VO f = 10 kHz DF = 50 % tPLH VO R L = 75 Ω tS 50 % iil1_01 tD iil1_03 Fig. 1 - Non-Saturated Switching Schematic tF tR Fig. 3 - Non-Saturated Switching Timing VCC = 5 V IF f = 10 kHz DF = 50 % RL tD VO VO I = 10 mA tPLH tR F VTH = 1.5 V tPHL iil1_02 iil1_04 Fig. 2 - Saturated Switching Schematic Document Number: 83612 Rev. 1.5, 08-May-08 tF tS Fig. 4 - Saturated Switching Timing For technical questions, contact: [email protected] www.vishay.com 297 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors 1.5 VF - Forward Voltage (V) 1.3 NCTR - Normalized CTR 1.4 TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.8 Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V TA = 70 °C 0.5 NCTR(SAT) NCTR 0.7 0.0 0.1 1 10 100 I F - Forward Current (mA) iil1_05 Fig. 5 - Forward Voltage vs. Forward Current 1 10 100 I F - LED Current (mA) Fig. 8 - Normalized Non-Saturated and Saturated CTR vs. LED Current 1.5 1.5 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 0.5 NCTR(SAT) NCTR NCTR - Normalized CTR NCTR - Normalized CTR 0.1 iil1_08 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 TA = 100 °C 0.5 NCTR(SAT) NCTR 0.0 0.1 iil1_06 1 10 0.0 0.1 100 I F - LED Current (mA) Fig. 6 - Normalized Non-Saturated and Saturated CTR vs. LED Current TA = 50 °C 0.5 NCTR(SAT) NCTR Ice - Collector Current (mA) NCTR - Normalized CTR CTRce(sat) VCE = 0.4 V 1.0 30 25 50 °C 20 15 70 °C 25 °C 100 °C 10 5 0 1 10 0 100 I F - LED Current (mA) Fig. 7 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 298 100 35 Normalized to: VCE = 10 V,IF = 10 mA iil1_07 10 Fig. 9 - Normalized Non-Saturated and Saturated CTR, Tamb = 100 °C vs. LED Current 1.5 0.0 0.1 1 IF - LED Current (mA) iil1_09 iil1_10 10 20 30 40 50 60 IF - LED Current (mA) Fig. 10 - Collector Emitter Current vs. Temperature and LED Current For technical questions, contact: [email protected] Document Number: 83612 Rev. 1.5, 08-May-08 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection 10 10 4 Worst case 10 3 10 2 VCE = 10 V 10 1 Typical 10 0 10 -1 10 -2 - 20 0 20 40 60 80 NIB-TA = - 20 °C NIB-TA = 25 °C NIB-TA = 50 °C NIB-TA = 70 °C 0.1 1 10 Fig. 14 - Normalized Photocurrent vs. IF and Temperature 1.2 Normalized to: IF = 10 mA Vcb = 9.3 V NhFE - Normalized hFE 70 °C 1.0 0.5 25 °C 50 °C 70 °C 0.0 1 10 25 °C - 20 °C 0.8 0.6 1 100 Fig. 12 - Normalized CTRcb vs. LED Current and Temperature 10 1.5 70 °C NhFE(sat) - Normalized SaturatedhFE Icb = 1.0357 * IF ^ 1.3631 10 1 0.1 1000 Fig. 15 - Normalized Non-Saturated hFE vs. Base Current and Temperature 1000 100 100 Ib - Base Current (µA) iil1_15 IF - LED Current (mA) iil1_12 50 °C 1.0 Normalized to: Ib = 20 µA VCE = 10 V 0.4 0.1 Icb - Collector Base Photocurrent - µA 100 IF - LED Current (mA) iil1_14 Fig. 11 - Collector Emitter Leakage Current vs.Temperature 1.5 1 0.01 0.1 100 TA - Ambient Temperature (°C) iil1_11 Normalized to: IF = 10 mA Normalized Photocurrent I CEO - Collector Emitter (nA) 10 5 NCTRcb - Normalized CTRcb Vishay Semiconductors 50 °C 25 °C 1.0 Normalized to: VCE = 10 V IB = 20 µA - 20 °C 0.5 VCE = 0.4 V 0.01 0.1 iil1_13 0.0 1 10 100 IF - LED Current (mA) Fig. 13 - Collector Base Photocurrent vs. LED Current Document Number: 83612 Rev. 1.5, 08-May-08 1 iil1_16 10 100 1000 IB - Base Current (µA) Fig. 16 - Normalized Saturated hFE vs. Base Current and Temperature For technical questions, contact: [email protected] www.vishay.com 299 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL 100 2.0 10 1.5 tpLH 1 1.0 0.1 iil1_17 tpHL - Propagation Delay (µs) tp - Propagation Delay (µs) 1000 1 10 100 RL - Collector Load Resistor (kΩ) Fig. 17 - Propagation Delay vs. Collector Load Resistor PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.048 0.039 (1.00) min. 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 6 Option 9 0.375 (9.53) 0.395 (10.03 ) 0.407 (10.36) 0.391 (9.96) 0.307(7.8) 0.291(7.4) 0.300 (7.62 ) ref. 0.0040 (0.102) 0.0098 (0.249) 18493 www.vishay.com 300 0.014(0.35) 0.010 (0.25) 0.400(10.16) 0.430 (10.92) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. For technical questions, contact: [email protected] 15° max. Document Number: 83612 Rev. 1.5, 08-May-08 IL1/IL2/IL5 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1