SM6S10 thru SM6S36A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop DO-218AB • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS VWM 10 V to 36 V PPPM (10 x 1000 μs) 4600 W PPPM (10 x 10 000 μs) 3600 W PD 6W IFSM 600 A TJ max. 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: Heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range VALUE UNIT 4600 with 10/1000 μs waveform PPPM PD W 3600 6.0 W See next table A IFSM 600 A TJ, TSTG - 55 to + 175 °C IPPM (1) Note (1) Non-repetitive current pulse at T = 25 °C A Document Number: 88384 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 194 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAXIMUM MAX. PEAK PULSE CURRENT CLAMPING VOLTAGE AT 10/1000 μs AT IPPM WAVEFORM (A) VC (V) MIN. MAX. TEST CURRENT IT (mA) SM6S10 11.1 13.6 5.0 10.0 15 250 245 18.8 SM6S10A 11.1 12.3 5.0 10.0 15 250 271 17.0 SM6S11 12.2 14.9 5.0 11.0 10 150 229 20.1 SM6S11A 12.2 13.5 5.0 11.0 10 150 253 18.2 SM6S12 13.3 16.3 5.0 12.0 10 150 209 22.0 SM6S12A 13.3 14.7 5.0 12.0 10 150 231 19.9 SM6S13 14.4 17.6 5.0 13.0 10 150 193 23.8 SM6S13A 14.4 15.9 5.0 13.0 10 150 214 21.5 SM6S14 15.6 19.1 5.0 14.0 10 150 178 25.8 SM6S14A 15.6 17.2 5.0 14.0 10 150 198 23.2 SM6S15 16.7 20.4 5.0 15.0 10 150 171 26.9 SM6S15A 16.7 18.5 5.0 15.0 10 150 189 24.4 SM6S16 17.8 21.8 5.0 16.0 10 150 160 28.8 SM6S16A 17.8 19.7 5.0 16.0 10 150 177 26.0 SM6S17 18.9 23.1 5.0 17.0 10 150 151 30.5 SM6S17A 18.9 20.9 5.0 17.0 10 150 167 27.6 SM6S18 20.0 24.4 5.0 18.0 10 150 143 32.2 SM6S18A 20.0 22.1 5.0 18.0 10 150 158 29.2 SM6S20 22.2 27.1 5.0 20.0 10 150 128 35.8 SM6S20A 22.2 24.5 5.0 20.0 10 150 142 32.4 SM6S22 24.4 29.8 5.0 22.0 10 150 117 39.4 SM6S22A 24.4 26.9 5.0 22.0 10 150 130 35.5 SM6S24 26.7 32.6 5.0 24.0 10 150 107 43.0 SM6S24A 26.7 29.5 5.0 24.0 10 150 118 38.9 SM6S26 28.9 35.3 5.0 26.0 10 150 99 46.6 SM6S26A 28.9 31.9 5.0 26.0 10 150 109 42.1 SM6S28 31.1 38.0 5.0 28.0 10 150 92 50.1 SM6S28A 31.1 34.4 5.0 28.0 10 150 101 45.4 SM6S30 33.3 40.7 5.0 30.0 10 150 86 53.5 SM6S30A 33.3 36.8 5.0 30.0 10 150 95 48.4 SM6S33 36.7 44.9 5.0 33.0 10 150 78 59.0 SM6S33A 36.7 40.6 5.0 33.0 10 150 86 53.3 SM6S36 40.0 48.9 5.0 36.0 10 150 72 64.3 SM6S36A 40.0 44.2 5.0 36.0 10 150 79 58.1 DEVICE TYPE Note • For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 195 For technical questions within your region, please contact one of the following: Document Number: 88384 [email protected], [email protected], [email protected] Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RJC 0.95 °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM6S10AHE3/2D (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 2.550 2D 750 13" diameter plastic tape and reel, anode towards the sprocket hole Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Input Peak Pulse Current (%) Power Dissipation (W) 8.0 6.0 4.0 2.0 tr = 10 μs TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td 0 0 50 0 150 100 1.0 2.0 3.0 t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 6000 4.0 10 000 Reverse Surge Power (W) 5000 Load Dump Power (W) 0 200 Case Temperature (°C) 4000 3000 2000 1000 0 1000 25 50 75 100 125 150 175 100 10 Case Temperature (°C) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 4 - Reverse Power Capability Document Number: 88384 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 196 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor Transient Thermal Impedance (°C/W) 100 RθJA 10 RθJC 1 0.1 0.01 0.01 0.1 1 10 100 t - Pulse Width (s) Fig. 5 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) Lead 1 0.138 (3.5) 0.098 (2.5) 0.016 (0.4) MIN. Lead 2/Metal Heatsink www.vishay.com 197 0.091 (2.3) 0.067 (1.7) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) For technical questions within your region, please contact one of the following: Document Number: 88384 [email protected], [email protected], [email protected] Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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