50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • UL approved file E78996 MTP • Speed 60 kHz to 100 kHz • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS PRODUCT SUMMARY VCES 600 V • Optimized for welding, UPS and SMPS applications VCE(on) typical at VGE = 15 V 2.3 V • Low EMI, requires less snubbing IC at TC = 25 °C 114 A • Direct mounting to heatsink • PCB solderable terminals • Very low stray inductance design for high speed operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS TC = 25 °C TC = 109 °C MAX. UNITS 600 V 114 50 Pulsed collector current ICM 350 Peak switching current ILM 350 Diode continuous forward current IF A TC = 109 °C 34 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation Document Number: 94468 Revision: 01-Mar-10 PD V Any terminal to case, t = 1 minute 2500 TC = 25 °C 658 TC = 100 °C 263 For technical questions, contact: [email protected] W www.vishay.com 1 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current SYMBOL V(BR)CES VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS VGE = 0 V, IC = 500 μA MIN. TYP. MAX. UNITS 600 - - V VGE = 15 V, IC = 50 A - 2.3 3.15 VGE = 15 V, IC = 100 A - 2.5 3.2 VGE = 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17 IC = 0.5 mA 3 - 6 VGE = 0 V, IC = 600 A - - 0.4 VGE = 0 V, IC = 600 A, TJ = 150 °C - - 10 IF = 50 A, VGE = 0 V - 1.58 1.80 IF = 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68 IF = 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 331 385 VCC = 400 V VGE = 15 V - 44 52 - 133 176 Internal gate resistors (see electrical diagram) IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 25 °C - 0.26 - - 1.2 - - 1.46 - Internal gate resistors (see electrical diagram) IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 150 °C - 0.73 - - 1.66 - - 2.39 - - 7100 - - 510 - - 140 - - 82 97 ns - 8.3 10.6 A - 340 514 nC V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 TEST CONDITIONS IC = 52 A VGE = 0 V VCC = 30 V f = 1.0 MHz VCC = 200 V, IC = 50 A dI/dt = 200 A/μs VCC = 200 V, IC = 50 A dI/dt = 200 A/μs TJ = 125 °C For technical questions, contact: [email protected] nC mJ mJ pF - 137 153 ns - 12.7 14.8 A - 870 1132 nC Document Number: 94468 Revision: 01-Mar-10 50MT060WHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Warp Speed IGBT), 114 A THERMISTOR SPECIFICATIONS PARAMETER SYMBOL Resistance (1) β (1)(2) R0 Sensitivity index of the thermistor material TEST CONDITIONS MIN. TYP. MAX. UNITS T0 = 25 °C - 30 - kΩ T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS - 40 - 150 - 40 - 125 Notes (1) T , T are thermistor´s temperatures 0 1 R0 1 1 ------- = exp β ⎛⎝ ------ – ------⎞⎠ , temperature in Kelvin T0 T1 R1 (2) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction temperature range SYMBOL TEST CONDITIONS IGBT, Diode Thermistor TJ - 40 - 125 - - 0.38 - - 0.8 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - Clearance (1) External shortest distance in air between 2 terminals 5.5 - - Creepage (1) Shortest distance along the external surface of the insulating material between 2 terminals 8 - - Mounting torque to heatsink A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Storage temperature range TStg IGBT Junction to case Diode Case to sink per module RthJC RthCS °C °C/W mm 3 ± 10 % Nm 66 g Weight Note Standard version only i.e. without optional thermistor 100 94468_01 Maximum DC Collector Current (A) IC - Collector to Emitter Current (A) (1) VGE = 15 V 20 μs pulse width 10 TJ = 150 °C TJ = 25 °C 1 0.1 1.0 100 80 60 40 20 0 10 VCE - Collector to Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Document Number: 94468 Revision: 01-Mar-10 120 25 94468_02 50 75 100 125 150 TC - Case Temperature (°C) Fig. 2 - Maximum Collector Current vs. Case Temperature For technical questions, contact: [email protected] www.vishay.com 3 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A 160 IC = 50 A 2.0 120 100 IF = 50 A, TJ = 25 °C 1.5 80 IC = 20 A 20 40 60 80 100 120 140 60 100 160 TJ - Junction Temperature (°C) 94468_03 1000 dIF/dt (A/µs) 94468_06 Fig. 3 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 100 20 VR = 200 V VCC = 400 V IC = 52 A VGE - Gate to Emitter Voltage (V) IF = 50 A, TJ = 125 °C IC = 100 A 1.0 16 IF = 50 A, TJ = 125 °C IRRM (A) 12 8 10 IF = 50 A, TJ = 25 °C 4 1 100 0 0 100 200 300 400 OG - Typical Gate Charge (nC) 94468_04 1000 dIF/dt (A/µs) 94468_07 Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt 100 2000 VR = 200 V 1500 Qrr (nC) IF - Instantaneous Forward Current (A) VR = 200 V 140 2.5 trr (ns) VCE - Typical Collector to Emitter Voltage (V) 3.0 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C IF = 50 A, TJ = 125 °C 1000 500 IF = 50 A, TJ = 25 °C 1 0.4 0.8 1.2 1.6 2.0 VFM - Forward Voltage Drop (V) 94468_05 Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.vishay.com 4 0 100 2.4 1000 dIF/dt (A/μs) 94468_08 Fig. 8 - Typical Stored Charge vs. dIF/dt For technical questions, contact: [email protected] Document Number: 94468 Revision: 01-Mar-10 50MT060WHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Warp Speed IGBT), 114 A 3, 4 3, 4 2 T 10 Ω 11 11 12 10 Ω 12 R 5, 6 1 5, 6 10 Ω 9 Thermistor option 9 10 10 Ω 10 7, 8 7, 8 Fig. 9 - Functional Diagram Fig. 10 - Electrical Diagram ORDERING INFORMATION TABLE Device code 50 MT 060 W H T A PbF 1 2 3 4 5 6 7 8 1 - Current rating (50 = 50 A) 2 - Essential part number 3 - Voltage rating (060 = 600 V) 4 - Speed/type (W = Warp IGBT) 5 - Circuit configuration (H = Half bridge) 6 - T = Thermistor 7 - A = Al2O3 substrate 8 - Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94468 Revision: 01-Mar-10 www.vishay.com/doc?95175 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.25 Note • Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1