New Product SiA910EDJ Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 2400 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6.2 nC APPLICATIONS PowerPAK SC-70-6 Dual • Load Switch for Portable Applications • High Frequency dc-to-dc Converter • DC/DC Converter 1 S1 D1 D2 2 G1 3 D2 D1 D1 6 Marking Code D2 5 2.05 mm 4 S2 2.05 mm Part # code G2 G1 CFX G2 XXX Lot Traceability and Date code S2 S1 Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter b, f t≤5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 www.vishay.com 1 New Product SiA910EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IGSS IDSS ID(on) RDS(on) gfs ID = 250 µA VDS = VGS , ID = 250 µA V 8 mV/°C - 2.5 0.4 1.0 VDS = 0 V, VGS = ± 8 V ±5 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 10 V µA A VGS = 4.5 V, ID = 5.2 A 0.023 0.028 VGS = 2.5 V, ID = 4.8 A 0.027 0.033 VGS = 1.8 V, ID = 2.5 A 0.035 0.042 VDS = 10 V, ID = 5.2 A 23 VDS = 10 V, VGS = 0 V, f = 1 MHz 190 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 455 VDS = 10 V, VGS = 8 V, ID = 6.8 A td(off) tf tr tf 16 6.2 9.5 nC 1.6 f = 1 MHz VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω td(on) td(off) 10.5 0.8 VDS = 10 V, VGS = 4.5 V, ID = 6.8 A td(on) tr pF 150 VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 0.8 4 8 10 15 12 20 25 40 12 20 5 10 10 15 20 30 10 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4.5 20 IS = 5.4 A, VGS = 0 V IF = 5.4 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 25 50 ns 10 20 nC 13 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 New Product SiA910EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10-2 10-3 3 I GSS - Gate Current (A) I GSS - Gate Current (mA) TJ = 25 °C 2 1 10-4 10-5 10-6 TJ = 150 °C 10-7 10-8 TJ = 25 °C 10-9 10-10 0 0 3 6 9 12 0 15 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 10 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 1.5 V 12 8 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.3 VDS - Drain-to-Source Voltage (V) 1.2 1.5 Transfer Characteristics 0.08 800 0.06 600 VGS = 1.8 V 0.04 VGS = 2.5 V VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.9 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.02 0.6 Ciss 400 Coss Crss 200 0 0.00 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 New Product SiA910EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 ID = 6.8 A 1.4 VGS = 1.8 V; ID = 2.5 A VDS = 6 V 4 VDS = 9.6 V VDS = 3 V 2 1.3 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 1.2 1.1 VGS = 4.5 V, 2.5 V; ID = 5.5 A 1.0 0.9 0.8 0.7 - 50 0 0 4 8 12 - 25 0 Gate Charge 75 100 125 150 On-Resistance vs. Junction Temperature 0.08 R DS(on) - On-Resistance (Ω) 100 I S - Source Current (A) 50 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 25 ID = 2.5 A; TJ = 125 °C 0.06 ID = 5.2 A; TJ = 125 °C 0.04 ID = 2.5 A; TJ = 25 °C ID = 5.2 A; TJ = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 20 0.7 15 ID = 250 µA Power (W) VGS(th) (V) 0.6 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 New Product SiA910EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 www.vishay.com 5 New Product SiA910EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65535. www.vishay.com 6 Document Number: 65535 S09-2267-Rev. A, 02-Nov-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1