SID20N06-90I 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-251P DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount package saves board space. Fast switching speed. High performance trench technology. A B C D GE K APPLICATION H F DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. M REF. A B C D E F J Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.40 0.60 6.80 7.20 4.00 P REF. G H J K M P Millimeter Min. Max. 6.00 6.30 0.90 1.50 2.30 0.60 0.90 0.70 1.20 0.40 0.60 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 19 A IDM 40 A IS 30 A PD 50 W TJ, TSTG -55 ~ 175 °C Continuous Drain Current 1 Pulsed Drain Current TC=25°C 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TC=25°C Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient 1 Maximum Junction to Case RθJA 50 RθJC 3 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SID20N06-90I 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 30 - - - - 94 - - 109 gFS - 22 - S VDS=15V,,ID=19A VSD - 1.1 - V IS=24A, VGS=0 On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 3.6 - Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.3 - Turn-On Delay Time Td(ON) - 16 - Tr - 5 - Td(OFF) - 23 - Fall Time Tf - 3 - Source-Drain Reverse Recovery Time Trr - 50 - Turn-Off Delay Time A mΩ VDS=48V, VGS=0 VDS=48V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=19A VGS=4.5V, ID=18A 2 Total Gate Charge Rise Time μA nC ID=19A VDS=15V VGS=4.5V nS VDD=25V VGEN=10V RL=25Ω ID=24A nS IF=24A, Di/Dt=100A/μS Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4