UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor RoHS Compliant 100 MHz to 500 MHz operation ABSOLUTE MAXIMUM RATINGS AT 25° C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 4.2 A Power Dissipation PD 48.6 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to 150 °C θJC 3.6 °C/W Thermal Resistance LETTER TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 6.4-j25.0 22.0+j16.0 300 6.5-j12.0 15.0+j14.0 500 1.7-j10.5 8.0=j10.5 VDD=28V, IDQ=150 mA, POUT =15.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 20.70 20.96 .815 .825 B 14.35 14.61 .565 .575 C 14.73 15.24 .580 .575 D 6.27 6.53 .247 .257 E 6.22 6.48 .245 .255 F 1.14 1.40 .045 .055 G 1.52 1.78 .060 .070 H 2.92 3.17 .115 .125 J 1.40 1.65 .055 .065 K 2.03 2.39 .080 .094 L 3.66 4.32 .144 .170 M .10 .15 .004 .006 ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 6.0 mA Drain-Source Leakage Current IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 30.0 mA Forward Transconductance GM .240 - S VDS = 10.0 V , IDS 300.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 21 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 15 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 7.2 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz Drain-Source Breakdown Voltage Gate Threshold Voltage Load Mismatch Tolerance Test Conditions 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz 16 20 POPWER OUTPUT (W) CISS 14 CAPACTANCES (pF) POWER OUTPUT VS VOLTAGE PIN=1.0 W IDQ=150 mA POUT=500 W 12 10 COSS 8 6 CRSS 4 2 15 10 5 0 0 5 10 20 15 25 5 30 10 15 VDS(V) 70 EFFICIENCY (W) GAIN (dB) 30 20 10 100 200 25 300 65 60 55 50 100 500 400 EFFICIENCY VS FREQUENCY VDD=28V IDQ =150 mA POUT =15 W 200 FREQUENCY (MHz) 300 400 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =150 mA 20 100MHz POWER OUTPUT (W) 30 VDD(V) GAIN VS FREQUENCY VDD =28 V POUT=15 W IDQ =100 mA 0 20 15 300MHz 10 500MHz 5 0 0.02 0.05 0.08 0.1 0.25 0.5 0.75 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 500 UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.