SiE820DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A)a RDS(on) (Ω) Silicon Limit Package Limit 0.0035 at VGS = 4.5 V 136 50 0.0064 at VGS = 2.5 V 100 50 VDS (V) 20 Qg (Typ.) 43 nC Package Drawing www.vishay.com/doc?73398 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D 1 G 2 S 3 D S 4 D 5 5 S 4 3 G D 2 1 • VRM • DC/DC Conversion • Synchronous Rectification D G Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free) SiE820DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET For Related Documents www.vishay.com/ppg?74447 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 20 ± 12 136 (Silicon Limit) 50a (Package Limit) 50a 30b, c 24b, c 80 50a 4.3b, c 30 45 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 SiE820DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 20 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient a ID(on) On-State Drain Current Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge a RDS(on) gfs Ciss Coss Crss Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 18 A VGS = 2.5 V, ID = 13.4 A VDS = 10 V, ID = 18 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.6 V 20 - 4.8 1.4 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2 ± 100 1 10 25 V nA µA A 0.0029 0.0053 106 4300 950 450 95 43 11.5 10 1.0 35 115 105 30 15 35 55 10 TC = 25 °C IS = 10 A mV/°C 0.8 101 100 75 25 0.0035 0.0064 Ω S pF 143 65 1.5 55 175 160 45 25 55 85 15 50 80 1.2 150 150 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 20 VGS = 5 V thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 60 40 12 TC = 125 °C 8 20 4 TC = 25 °C VGS = 2 V 0 0.0 0.5 1.0 TC = - 55 °C 1.5 0 1.0 2.0 1.4 0.008 7200 0.007 6000 VGS = 2.5 V 0.005 0.004 4800 Coss 2400 Ciss VGS = 4.5 V 1200 0.002 0 40 60 Crss 0 80 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 I D = 18 A ID = 20 A 1.4 8 VDS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 3600 0.003 20 2.6 Transfer Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (m ) Output Characteristics 0 2.2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.006 1.8 VDS = 16 V 6 4 VGS = 4.5 V 1.2 VGS = 2.5 V 1.0 0.8 2 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.008 TJ = 150 °C R DS(on) - Drain-to-Source On-Resistance ( ) I S - Source Current (A) 100 TJ = 25 °C 10 ID = 18 A 0.007 0.006 TA = 125 °C 0.005 0.004 0.003 TA = 25 °C 0.002 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.8 50 1.6 40 ID = 250 µA Power (W) 1.4 VGS(th) (V) 2 VGS - Gate-to-Source Voltage (V) 1.2 30 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s TA = 25 °C Single Pulse 10 s 0.1 DC BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 160 140 100 Power Dissipation (W) I D - Drain Current (A) 120 100 80 Package Limited 60 80 60 40 40 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74447. www.vishay.com 6 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 Package Information Vishay Siliconix PolarPAK (Option S) M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M3 VIEW A E E1 T2 T1 T4 T3 Q T5 M4 M3 T3 M2 T5 Q M1 D G S S D 1 2 3 4 5 c A (Top View) Q Q H1 6 7 8 9 10 D S S G D b1 b3 H4 H3 b2 H2 b1 H1 Z K4 P1 K1 D1 D A1 K4 P1 b4 b4 DETAIL Z b5 D 5 b5 S S 4 3 b5 G D 2 1 VIEW A (Bottom View) Document Number: 73398 10-Jun-05 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS Dim A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 Q INCHES Min Nom Max Min Nom Max 0.75 0.80 0.85 0.030 0.031 0.033 0.00 − 0.05 0.000 − 0.002 0.48 0.58 0.68 0.019 0.023 0.027 0.41 0.51 0.61 0.016 0.020 0.024 2.19 2.29 2.39 0.086 0.090 0.094 0.89 1.04 1.19 0.035 0.041 0.047 0.23 0.33 0.43 0.009 0.013 0.017 0.20 0.25 0.30 0.008 0.010 0.012 6.00 6.15 6.30 0.236 0.242 0.248 5.74 5.89 6.04 0.226 0.232 0.238 5.01 5.16 5.31 0.197 0.203 0.209 4.75 4.90 5.05 0.187 0.193 0.199 0.23 − − 0.009 − − 0.45 − 0.56 0.020 − 0.022 0.31 0.41 0.51 0.012 0.016 0.020 0.45 − 0.56 0.020 − 0.022 4.22 4.37 4.52 0.166 0.172 0.178 0.24 − − 0.009 − − 4.30 4.50 4.70 0.169 0.177 0.185 3.43 3.58 3.73 0.135 0.141 0.147 0.22 − − 0.009 − − 0.05 − − 0.002 − − 0.15 0.20 0.25 0.006 0.008 0.010 3.48 3.64 4.10 0.137 0.143 0.150 0.56 0.76 0.95 0.22 0.030 0.037 1.20 − − 0.051 − − 3.90 − − 0.154 − − 0 0.18 0.36 0.000 0.007 0.014 0_ 10_ 12_ 0_ 10_ 12_ ECN: S−51049—Rev. B, 13-Jun-05 DWG: 5947 Note: Millimeters govern over inches www.vishay.com 2 Document Number: 73398 10-Jun-05 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1