Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V −3.7 APPLICATIONS 0.027 @ VGS = −4.5 V −7.0 0.035 @ VGS = −2.5 V −6.2 D Game Station − Load Switch 0.048 @ VGS = −1.8 V −5.2 VDS (V) Channel-1 −30 Channel-2 −20 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4955DY—E3 Si4955DY-T1—E3 (with Tape and Reel) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol 10 secs Channel-2 Steady State 10 secs Steady State Drain-Source Voltage VDS −30 −20 Gate-Source Voltage VGS "20 "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS PD V −5.0 −3.8 −7.0 −5.3 −4.0 −3.0 −5.6 −4.2 IDM −20 −1.7 −0.9 −1.7 −0.9 2.0 1.1 2 1.1 1.3 0.7 1.3 0.7 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Channel-1 Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Channel-2 Typ Max Typ Max 55 62.5 58 62.5 90 110 91 110 33 40 34 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72241 S-32411—Rev. B, 24-Nov-03 www.vishay.com 1 Si4955DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) rDS(on) gfs f VSD VDS = VGS, ID = −250 mA Ch 1 −1.0 −3 VDS = VGS, ID = −250 mA Ch 2 −0.4 −1 VDS = 0 V, VGS = "20 V Ch 1 "100 VDS = 0 V, VGS = "8 V Ch 2 "100 VDS = −24 V, VGS = 0 V Ch 1 −1 VDS = −16 V, VGS = 0 V Ch 2 −1 VDS = −24 V, VGS = 0 V, TJ = 85_C Ch 1 −5 VDS = −16 V, VGS = 0 V, TJ = 85_C Ch 2 VDS w −5 V, VGS = −10 V Ch 1 −20 VDS p −5 V, VGS = −10 V Ch 2 −20 V nA mA −5 A VGS = −10 V, ID = −5.0 A Ch 1 0.044 0.054 VGS = −4.5 V, ID = −7.0 A Ch 2 0.022 0.027 VGS = −4.5 V, ID = −3.7 A Ch 1 0.082 0.100 VGS = −2.5 V, ID = −6.2 A Ch 2 0.029 0.035 0.048 VGS = −1.8 V, ID = −3 A Ch 2 0.039 VDS = −15 V, ID = −5.0 A Ch 1 10 VDS = −15 V, ID = −3 A Ch 2 25 IS = −1.7 A, VGS = 0 V Ch 1 −0.80 −1.2 IS = −1.7 A, VGS = 0 V Ch 2 −0.80 −1.2 Ch 1 12.5 19 Ch 2 21 25 Ch 1 2.1 Ch 2 2.6 Ch 1 3.5 Ch 2 6.0 W S V Dynamicb Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source-Drain Reverse Recovery Time Channel-1 VDS = −15 V, VGS = −10 V, ID = −5.0 A Channel-2 VDS = −10 10 V V, VGS = −4.5 45V V, ID = −7 7A nC Ch 1 7 15 Ch 2 20 30 tr Channel-1 VDD = −15 V, RL = −15 W ID ^ −1 A, VGEN = −10 V, RG = 6 W Ch 1 10 15 Ch 2 40 60 td(off) d( ff) Channel-2 VDD = −10 10 V, V RL = 10 W ID ^ −1 1 A, VGEN = −4.5 4.5 V, RG = 6 W Ch 1 30 45 Ch 2 125 190 Ch 1 22 35 td(on) d( ) tf trr Ch 2 85 130 IF = −1.7 A, di/dt = 100 A/ms Ch 1 25 60 IF = −1.7 A, di/dt = 100 A/ms Ch 2 64 90 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics CHANNEL 1 Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 4V 8 12 8 TC = 125_C 4 4 25_C 3V −55_C 0 0 0 1 2 3 4 5 0 6 1 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 4 5 Capacitance 1000 0.16 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.20 2 VGS − Gate-to-Source Voltage (V) 0.12 VGS = 4.5 V 0.08 VGS = 10 V 800 Ciss 600 400 Coss 0.04 200 0.00 0 Crss 0 4 8 12 16 20 0 6 ID − Drain Current (A) 18 24 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 5.0 V 8 r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 12 6 4 2 1.4 VGS = 10 V ID = 5.0 V 1.2 1.0 0.8 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) Document Number: 72241 S-32411—Rev. B, 24-Nov-03 12 14 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 30 10 TJ = 25_C 1 0.0 0.16 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C ID = 2 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.6 Single Pulse Power 30 0.4 25 ID = 250 mA 0.2 20 Power (W) V GS(th) Variance (V) ID = 5 A 0.12 0.0 15 10 −0.2 5 −0.4 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) P(t) = 0.0001 10 P(t) = 0.001 ID(on) Limited 1 P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL 1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 16 I D − Drain Current (A) I D − Drain Current (A) Transfer Characteristics 20 VGS = 5 thru 2 V 16 CHANNEL 2 12 1.5 V 8 4 12 8 TC = 125_C 4 25_C 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) Document Number: 72241 S-32411—Rev. B, 24-Nov-03 5 0 0.0 0.4 0.8 −55_C 1.2 1.6 2.0 VGS − Gate-to-Source Voltage (V) www.vishay.com 5 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL 2 On-Resistance vs. Drain Current Capacitance 3000 2500 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.10 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 Ciss 2000 1500 1000 Coss 500 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 7 A r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 4 3 2 1 VGS = 4.5 V ID = 7 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 −50 24 −25 0 Qg − Total Gate Charge (nC) 10 0.08 r DS(on) − On-Resistance ( W ) 20 TJ = 150_C TJ = 25_C 75 100 125 150 ID = 7 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) www.vishay.com 50 On-Resistance vs. Gate-to-Source Voltage 0.10 1 0.0 25 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage I S − Source Current (A) 12 VDS − Drain-to-Source Voltage (V) 5 6 8 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72241 S-32411—Rev. B, 24-Nov-03 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL 2 Single Pulse Power 30 0.3 25 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) Threshold Voltage 0.4 0.1 20 15 0.0 10 −0.1 5 −0.2 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 1 10 100 600 Time (sec) TJ − Temperature (_C) Safe Operating Area 100 IDM Limited I D − Drain Current (A) rDS(on) Limited P(t) = 0.0001 10 P(t) = 0.001 ID(on) Limited 1 P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 7 Si4955DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL 2 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 8 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72241 S-32411—Rev. B, 24-Nov-03