SFH620A 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40–320% at 1 mA: 45% typical (>13) • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VACRMS • High Collector-Emitter Voltage, VCEO=70 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100"(2.54 mm) Spacing • High Common-Mode Interference Immunity (Unconnected Base) • Underwriters Lab File #52744 • VDE 0884 Available with Option 1 • SMD Option, See SFH6206 Data Sheet Package Dimensions in Inches (mm) 2 1 Pin One I.D. .268 (6.81) .255 (6.48) 3 Anode/ Cathode 1 4 Collector Cathode/ Anode 2 3 Emitter 4 .190 (4.83) .179 (4.55) .305 (7.75) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4° Typ. .022 (.56) .018 (.46) 10° Typ. .040 (1.02) .030 (.76 ) 3°–9° 1.00 (2.54) Typ. .012 (.30) .008 (.20) DESCRIPTION The SFH620A features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Maximum Ratings Emitter Reverse Voltage ................................................................... 6 V DC Forward Current ..................................................... ± 60 mA Surge Forward Current (tP≤10 µs) .................................. ± 2.5 A Total Power Dissipation ................................................ 100 mW Detector Collector-Emitter Voltage ................................................... 70 V Emitter-Collector Voltage ...................................................... 7 V Collector Current .............................................................50 mA Collector Current (tP≤1 ms) ...........................................100 mA Total Power Dissipation ................................................ 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ................................................. 5300 VACRMS Creepage........................................................................ ≥7 mm Clearance ....................................................................... ≥7 mm Insulation Thickness between Emitter and Detector ... ≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 .................................. 175 Isolation Resistance VIO=500 V, TA=25°C.................................................. ≥1012 Ω VIO=500 V, TA=100°C................................................ ≥1011 Ω Storage Temperature Range .............................. –55 to +150°C Ambient Temperature Range.............................. –55 to +100°C Junction Temperature ...................................................... 100°C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane ≥1.5 mm) ........................... 260°C 5–252 Characteristics (TA=25°C) Description Symbol Unit Condition Emitter Forward Voltage VF 1.25 (≤1.65) V IF=± 60 mA Capacitance C0 50 pF VR=0 V, f=1 MHz Thermal Resistance RthJA 750 K/W Capacitance CCE 6.8 pF Thermal Resistance RthJA 500 K/W Collector-Emitter Saturation Voltage VCESAT 0.25 (≤0.4) V Coupling Capacitance CC 0.2 pF Detector VCE=5 V, f=1 MHz Package IF=10 mA, IC=2.5 mA Note: 1. Still air, coupler soldered to PCB or base. Current Transfer Ration (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current by Dash Number Description -1 -2 -3 IC/ IF (IF=± 10 mA) 40–125 63–200 100–320 % IC/ IF (IF=± 1 mA) 30 (>13) 45 (>22) 70 (>34) % Collector-Emitter Leakage Current, ICEO VCE=10 V 2 (≤50) 2 (≤50) 5 (≤100) nA Switching Times Linear Operation (without saturation) IF RL=75 Ω IC VCC=5 V 47 Ω IF=10 mA, VCC=5 V, TA=25°C Load Resistance RL 75 Ω Turn-on Time tON 3.0 µs Rise Time tR 2.0 µs Turn-off Time tOFF 2.3 µs Fall Time tF 2.0 µs Cut-off Frequency FCO 250 kHz SFH620A 5–253 Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=0.5 V Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25°C Figure 3. Diode forward voltage (typ.) vs. forward current Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25°C, f=1 MHz Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, TA=25°C Figure 6. Permissible power dissipation vs. ambient temp. 20 pF C 15 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 7. Permissible diode forward current vs. ambient temp. SFH620A 5–254