MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
CM500HA-34A
●I C ….………………….…….. 500 A
●V CES ……………..…...….. 1700 V
●Flat base Type
Copper (non-plating) base plate
No accessory (terminal screw) attach
●RoHS Directive compliant
Single
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Di1
Tolerance otherwise specified
Division of Dimension
Tolerance
0.5
to
3
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
C
E
Tr1
E
G
1
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1700
V
VGES
Gate-emitter voltage
C-E short-circuited
±20
V
IC
Item
Conditions
DC, TC=87 °C
Collector current
ICRM
(Note.2)
Pulse, Repetitive
500
(Note.3)
A
1000
Total power dissipation
TC=25 °C
(Note.2, 4)
Emitter current
(Free wheeling diode forward current)
TC=25 °C
(Note.2, 4)
Tj
Junction temperature
-
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Ptot
IE
(Note.1)
IERM
(Note.1)
Pulse, Repetitive
(Note.3)
5000
500
W
A
1000
3500
°C
V
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Mounting torque
Mt
Limits
Conditions
Ms
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
1.96
2.45
2.94
Auxiliary terminals
M 4 screw
0.98
1.18
1.47
Mounting to heat sink
M 6 screw
1.96
2.45
2.94
-
480
-
g
±0
-
+100
μm
m
Weight
-
ec
Flatness of base plate
On the centerline X, Y
(Note.5)
N·m
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
IGES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
3
μA
VGE(th)
Gate-emitter threshold voltage
IC=50 mA, VCE=10 V
5.5
7
8.5
V
T j =25 °C
-
2.2
3.0
T j =125 °C
-
2.45
-
-
-
120
-
-
14
-
-
2.6
-
3300
-
-
-
900
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
IC=500 A
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=500 A, VGE=15 V
VCC=1000 V, IC=500 A, VGE=±15 V,
RG=3.0 Ω, Inductive load
Fall time
500
700
350
nC
ns
2.3
3.2
V
VCC=1000 V, IE=500 A, VGE=±15 V,
-
-
650
ns
μC
IE=500 A
trr
(Note.1)
Reverse recovery time
Qrr
(Note.1)
Err
-
nF
-
Emitter-collector voltage
(Note.1)
-
V
-
(Note.1)
Eoff
,
VGE=15 V
VEC
Eon
(Note.6)
(Note.6)
, G-E short-circuited
Reverse recovery charge
RG=3.0 Ω, Inductive load
-
50
-
Turn-on switching energy per pulse
VCC=1000 V, IC=IE=500 A,
-
267.8
-
Turn-off switching energy per pulse
VGE=±15 V, RG=3.0 Ω,
-
138.5
-
mJ
Reverse recovery energy per pulse
T j =125 °C, Inductive load
-
98.1
rg
Internal gate resistance
TC=25 °C
-
1.0
-
Ω
RG
External gate resistance
-
3.0
-
10
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Conditions
(Note.2)
Contact thermal resistance
(Note.2)
Limits
Min.
Typ.
Max.
Unit
Junction to case, IGBT part
-
-
25
K/kW
Junction to case, FWDi part
Case to heat sink,
(Note.7)
Thermal grease applied
-
-
42
K/kW
-
20
-
K/kW
2
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
-: Concave
+: Convex
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating.
Note.5: Base plate flatness measurement point is as in the following figure.
Bottom
X
Y
Bottom
-: Concave
Bottom
+: Convex
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.
3
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C
C
VGE=15 V
IC
G
V
shortcircuited
IE
G
V
Es
Es
E
E
VEC test circuit
V C E s a t test circuit
iE
∼
vGE
90 %
0V
t rr
IE
+
VCC
0A
90 %
RG
Irr
vCE
vGE
0.5×I r r
iC
-V GE
10 %
0A
tr
td ( o n )
tf
t d( o ff)
t
t r r , Q r r test waveform
Switching characteristics test circuit and waveforms
iE
vCE
t
∼
iC
0V
Q rr =0.5×I rr ×t r r
t
Load
-V GE
+V GE
iE
0
iC
iC
ICM
VCC
ICM
VCC
IEM
vEC
vCE
VCC
t
0A
0
0.1×ICM
0.1×VCC
t
0
0.1×VCC
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0V
t
ti
FWDi Reverse recovery energy
Turn-on, Turn-off switching and Reverse recovery energy test waveforms (integral range)
4
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
4
1000
13 V
VGE=20 V
12 V
15 V
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
T j =125 °C
COLLECTOR CURRENT
IC (A)
800
11 V
600
400
10 V
200
3
T j =25 °C
2
1
9 V
8 V
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
0
10
200
VCE (V)
400
600
800
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
1000
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j =25 °C
G-E short-circuited
1000
10
T j =125 °C
IC=1000 A
6
IE (A)
IC=500 A
IC=200 A
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
8
4
T j =25 °C
100
2
0
10
5
10
15
GATE-EMITTER VOLTAGE
0.5
20
VGE (V)
1.5
2.5
EMITTER-COLLECTOR VOLTAGE
5
3.5
VEC (V)
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 Ω, T j =125 °C
INDUCTIVE LOAD
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC=500 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD
10000
10000
SWITCHING TIME (ns)
SWITCHING TIME (ns)
td(off)
1000
tf
td(on)
100
tr
1000
td(off)
td(on)
tf
tr
10
100
10
100
COLLECTOR CURRENT
1000
1
IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 Ω, T j =125 °C
INDUCTIVE LOAD, PER PULSE
RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC/IE=500 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1000
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
10
EXTERNAL GATE RESISTANCE
Eon
100
Err
Eoff
10
Eon
Eoff
100
Err
10
10
100
1000
1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
10
EXTERNAL GATE RESISTANCE
6
RG (Ω)
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
IC=500 A, T j =25 °C
1000
20
GATE-EMITTER VOLTAGE
Cies
100
CAPACITANCE (nF)
VGE (V)
VCC= 8 0 0 V
10
Coes
1
Cres
0.1
15
VCC= 1 0 0 0 V
10
5
0
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
0
VCE (V)
Zth(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
t r r (ns), I r r (A)
Irr
10
EMITTER CURRENT
4000
5000
QG (nC)
Single pulse, TC=25°C
trr
100
3000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
1000
10
2000
GATE CHARGE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 Ω, T j =125 °C
INDUCTIVE LOAD
100
1000
1000
IE (A)
7
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
R t h ( j - c ) Q =25 K/kW, R t h ( j - c ) D =42 K/kW
TIME (S)
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is
always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property
damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
·These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best
suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging
to Mitsubishi Electric Corporation or a third party.
·Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the
use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information
on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi
Semiconductor home page (http://www.mitsubishichips.com/Global/index.html).
·When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and
algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the
information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from
the information contained herein.
·Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under
circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus
or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the
Japanese government and cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
·Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these
materials or the products contained therein.
8
July-2010