RB715F Diodes Shottky barrier diode RB715F zApplication Low current rectification zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) 1.3 zFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 2.0±0.2 0.15±0.05 0.9MIN. 0.8MIN. UMD3 (2) 0.1Min 0～0.1 zConstruction Silicon epitaxial planer (1) （0.65） 0.65 2.1±0.1 1.25±0.1 (3) 1.6 0.3±0.1 各リードとも Each lead has same dimension 同寸法 （0.65） zStructure 0.7±0.1 1.3±0.1 0.9±0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) zTaping dimensions (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 2.25±0.1 0 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Symbol VRM Limits VR Io 40 30 IFSM Tj Tstg 200 125 -40 to +125 Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ0.5±0.05 4.0±0.1 2.4±0.1 8.0±0.2 5.5±0.2 0～0.1 2.4±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit V 40 V mA mA ℃ ℃ (*1)Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. - Typ. 2.0 Max. 0.37 1 - Unit V µA pF Conditions IF=1mA VR=10V VR=1V f=1MHz Rev.B 1/3 RB715F Diodes zElectrical characteristic curves (Ta=25°C) 1000 100 10 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 0.001 0.01 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 30 0 5 270 260 0.8 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 0.1 7 6 5 4 AVE:1.97pF 3 2 Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm 15 15 8.3ms 10 8.3ms 8.3ms 1cyc 10 5 AVE:7.30A 35 Ta=25℃ f=1MHz VR=1V n=10pcs 8 IR DISPERSION MAP 1cyc 30 0 VF DIPERSION MAP Ifsm 25 1 0 20 20 9 0.7 250 15 10 Ta=25℃ VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 AVE:267.4mV 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 100 1 0.04 1000 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA 10 1ms FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.03 D=1/2 Sin(θ＝180) 0.02 DC 0.01 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 0.9 Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 290 1 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.002 DC 0.001 D=1/2 Sin(θ＝180) time 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB715F Diodes 0.10 Io 0A 0V 0.08 t 0.06 DC 0.04 D=1/2 T VR D=t/T VR=20V Tj=125℃ 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 t 0.06 DC 0.04 D=1/2 0.02 T VR D=t/T VR=20V Tj=125℃ Sin(θ＝180) Sin(θ＝180) 0 Io 0A 0V 0.08 0.00 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1