ROHM RB530S-30

Data Sheet
Schottky barrier Diode
RB530S-30
Applications
General rectification
Land size figure (Unit : mm)
Dimensions (Unit : mm)
0.6
0.8
1.7
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
EMD2
Construction
Silicon epitaxial planer
Structure
Taping specifications (Unit : mm)
0.2±0.05
φ1.5±0.05
2.0±0.05
φ1.55±0.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
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Symbol
VF
IR
空ポケット
Empty
pocket
Limits
30
100
500
125
-40 to +125
Min.
-
1/3
2.0±0.05
4.0±0.1
Typ.
-
1.25
0.06
1.26±0.05
00
3.5±0.05
0.6
1.25
1.3±0.06
0.06
0
0
2.40±0.05
2.45±0.1
φ0.5
0.95±0.06
0.90±0.05
0
8.0±0.15
1.75±0.1
4.0±0.1
0.2
0.76±0.05
0.75±0.05
Unit
V
mA
mA
C
C
Max.
0.45
0.5
Unit
V
μA
Conditions
IF=10mA
VR=10V
2011.03 - Rev.B
Data Sheet
RB530S-30
Electical characteristics curves
Ta=125
10
Ta=75C
1
Ta=-25C
0.1
Ta=25C
0.01
Ta=75C
10000
1000
Ta=25C
100
10
Ta=-25C
1
200
300
400
500
0
600
370
Ta=25C
VF=10mA
n=30pcs
1
30
0
350
340
AVE : 347.5mV
330
800
700
600
500
400
300
AVE : 108.3nA
200
Ta=25C
f=1MHz
VR=0V
n=10pcs
17
16
15
AVE : 16.28pF
14
13
12
11
0
10
Ct DISPERSION MAP
10
AVE : 4.20A
5
10
PEAK SURGE
FORWARD CURRENT : I FSM(A)
8.3ms
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
1cyc
Ifsm
8.3ms
8.3ms
1cyc
5
0
0
Ifsm
t
5
0
1
10
100
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
0.02
FORWARD POWER
DISSIPATION : Pf(W)
100
DC
0.08
Rth(j-a)
Rth(j-c)
10
D=1/2
0.06
Sin(=180)
0.04
0.02
0.015
0.01
DC
0.005
Sin(=180)
1
0.001
20
18
IR DISPERSION MAP
Ifsm
15
19
100
VF DISPERSION MAP
20
10
20
Ta=25C
VR=10V
n=30pcs
900
320
15
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
360
10
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100
REVERSE POWER
DISSIPATION : PR (W)
0
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
0.1
0.001
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
f=1MHｚ
100000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ta=125C
100
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
100
1000000
1000
D=1/2
0
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
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1000
0
0.05
0.1
0.15
0.2
0
0
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2/3
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2011.03 - Rev.B
0.3
0.3
0A
0V
DC
0.2
Io
VR
t
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Data Sheet
RB530S-30
0A
0V
0.2
DC
Io
VR
t
T
D=t/T
VR=15V
Tj=125C
100
125
D=1/2
0.1
Sin(=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
0
25
50
75
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2011.03 - Rev.B
Notice
Notes
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R1120A