Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) DESCRIPTION 7W 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 2 (0.25) INDEX MARK (Gate) 0.9+/-0.1 0.2+/-0.05 For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets. Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 Junction to case RATINGS 25 -5/+10 50 0.8* 3 150 -40 to +125 2.5 UNIT V V W W A °C °C °C/W Note: Above parameters are guaranteed independently. *: 175MHz spec. is 0.6W ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 Pout3 D3 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Output power Drain efficiency VSWRT Load VSWR tolerance (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS MIN 0.5 7** 58** - VDS=17V, VGS=0V VGS=5V, VDS=0V VDS=7.2V, IDS=1mA f=175MHz,VDD=7.2V Pin=0.3W,Idq=250mA f=527MHz ,VDD=7.2V Pin=0.4W,Idq=250mA f=870MHz ,VDD=7.2V Pin=0.5W,Idq=250mA VDD=9.5V,Po=7W(Pin Control) f=527MHz,Idq=250mA,Zg=50 Load VSWR=20:1(All Phase) Note: Above parameters, ratings, limits and conditions are subject to change. * At 135-175MHz broad matching ** At 450-527MHz broad matching RD07MUS2B LIMITS TYP MAX. 10 1 1 1.5 7.2* 65* 8** 63** 7*** 58*** No destroy *** UNIT uA uA V W % W % W % - At 763-870MHz broad matching 23 Dec 2010 1/17 (0.22) 3 (0.25) APPLICATION SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c 3.5+/-0.05 1 FEATURES Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) V DS-IDS CHARACTERISTICS V GS-IDS CHARACTERISTICS 7 3.5V 3V 7 Ta=+25°C 6 2.5V 5 IDS (A),g m (S) 5 IDS (A) Ta=+25°C V DS=10V 6 4 2V 3 4 gm 3 IDS 2 2 1 1 V GS=1.5V 0 0 0 2 4 6 8 0 10 0.5 1 V DS (V) V DS V S. Ciss CHARACTERISTICS 2 2.5 3 V DS VS. Coss CHARACTERISTICS 160 120 140 Ta=+25°C f=1MHz 120 Ta=+25°C f=1MHz 100 80 Coss(pF) 100 Ciss(pF) 1.5 V GS (V ) 80 60 60 40 40 20 20 0 0 0 5 10 V DS (V) 15 20 0 5 10 V DS (V) 15 20 V DS V S. Crss CHARACTERISTICS 20 18 Ta=+25°C f =1MHz 16 Crss(pF) 14 12 10 8 6 4 2 0 0 5 10 V DS (V) 15 20 RD07MUS2B 23 Dec 2010 2/17 Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS ( 135-175MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) f-Po CHARACTERISTICS @f=135-175M Hz 100 f-Po CHARACTERISTICS @f=135-175MHz 10 100 Po 80 20 60 Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA ηd Gp 40 Pout(W) , Idd(A) 30 8 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 40 80 6 60 ηd Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA 4 Idd 10 20 ηd(%) 50 40 2 20 Idd 0 0 135 140 145 150 155 160 165 170 175 f (MHz) Pin-Po CHARACTERISTICS @f=175MHz 100 10 80 8 100 60 20 40 Gp Ta=+25°C f=175MHz Vdd=7.2V Idq=250mA 10 5 10 2 0 0 15 20 Pin(dBm) 25 10 Idd 5 0 6 7 Vdd(V) 8 9 0 0.2 0.4 Pin(W) 0.6 0.8 Vgg-Po CHARACTERISTICS @f=175MHz 4 8 3 6 Po(W) Po(W) Po 5 20 10 Idd(A) Ta=+25°C f=175MHz Pin=0.3W Idq=250mA Zg=ZI=50 ohm 4 40 Idd 0 30 5 3 60 Ta=+25°C f =175MHz Vdd=7.2V Idq=250mA 4 Vdd-Po CHARACTERISTICS @f=175MHz 15 ηd 6 20 25 20 80 Idd 0 0 Pout(W) , Idd(A) ηd 30 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 40 ηd(%) Pin-Po CHARACTERISTICS @f=175MHz 2 4 1 2 0 0 10 5 Ta=+25°C f =175MHz Pin=0.3W Idq=250mA Zg=ZI=50 ohm 4 3 2 Idd 1 0 0 RD07MUS2B Po Idd(A) 50 0 0 135 140 145 150 155 160 165 170 175 f (MHz) 0.4 0.8 1.2 Vgg(V) 1.6 2 23 Dec 2010 3/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS ( 450-527MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) f-Po CHARACTERISTICS @f=450-527MHz 100 f-Po CHARACTERISTICS @f=450-527M Hz 10 60 Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA ηd 20 Gp 8 40 Pout(W) , Idd(A) 80 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 40 30 100 Po 80 6 60 ηd Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA 4 Idd 10 20 ηd(%) 50 40 2 20 Idd 0 0 450 460 470 480 490 500 510 520 530 f (MHz) Pin-Po CHARACTERISTICS @f=527MHz 100 100 Po Ta=+25°C f=527MHz Vdd=7.2V Idq=250mA Po 80 30 60 ηd(%) ηd 20 8 40 Gp 80 ηd 6 60 Ta=+25°C f=527MHz Vdd=7.2V Idq=250mA 4 ηd(%) 40 Pin-Po CHARACTERISTICS @f=527MHz 10 Pout(W) , Idd(A) 50 Po(dBm) , Gp(dB) , Idd(A) 0 0 450 460 470 480 490 500 510 520 530 f (MHz) 40 Idd 10 20 2 0 0 20 Idd 0 5 10 15 20 Pin(dBm) 25 0.0 30 Vdd-Po CHARACTERISTICS @f=527MHz Po(W) 20 15 Po 10 0.6 10 5 Ta=+25°C f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm Po 4 8 3 6 3 4 2 2 Po(W) Ta=+25°C f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm 0.4 Pin(W) Vgg-Po CHARACTERISTICS @f=527MHz 5 Idd(A) 25 0.2 0 0.8 4 Idd 5 0 3 4 5 6 7 Vdd(V) 8 9 Idd 1 2 0 0 10 1 0 0 RD07MUS2B 0.4 0.8 1.2 Vgg(V) 1.6 2 23 Dec 2010 4/17 Idd(A) 0 Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS ( 763-870MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) f-Po CHARACTERISTICS @f=763-870MHz f-Po CHARACTERISTICS @f=763-870MHz 100 10 100 80 30 60 Ta=+25°C Vdd=7.2V Pin=0.5W Idq=250mA 20 ηｄ Po 8 40 Pout(W) , Idd(A) 40 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 20 80 6 60 ηd 4 40 Gp 10 Ta=+25°C Vdd=7.2V Pin=0.5W Idq=250mA ηd(%) 50 Idd 2 20 Idd Ta=+25°C f =870MHz Vdd=7.2V Idq=250mA 40 Po 30 100 10 80 8 60 ηｄ 20 40 Gp Pout(W) , Idd(A) Pin-Po CHARACTERISTICS @f=870MHz ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz) Pin-Po CHARACTERISTICS @f=870MHz 80 Po 6 60 ηd 4 Idd 10 20 2 0 0 100 Ta=+25°C f =870MHz Vdd=7.2V Idq=250mA 40 20 Idd 0 0 5 10 15 20 Pin(dBm) 25 0 0.0 30 0.2 0.4 Pin(W) 0.6 0.8 Vdd-Po CHARACTERISTICS @f=870MHz 25 5 Ta=+25°C f=870MHz Pin=0.5W Idq=250mA Zg=ZI=50 ohm 15 4 3 Idd 10 5 Idd(A) Po(W) 20 2 1 Po 0 0 3 4 5 6 7 Vdd(V) 8 9 10 RD07MUS2B 23 Dec 2010 5/17 ηd(%) 0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz) Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS ( Vds=3.6V ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) 6 Po 40 Idd 2 20 80 Po 30 60 20 40 Gp 10 20 Po(dBm) , Gp(dB) , Idd(A) 40 ηｄ ηd(%) Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=520MHz Vdd=3.6V Idq=250mA 4 50 Idd 810 820 0 10 15 20 Pin(dBm) 20 830 840 f (MHz) 850 0 870 860 Pin-Po CHARACTERISTICS @f=870MHz 100 Ta=+25°C f=870MHz Vdd=3.6V Idq=250mA 40 80 Po 30 60 ηｄ 20 40 Gp 10 20 Idd 0 5 40 Po Idd 0 60 ηd 0 800 Pin-Po CHARACTERISTICS @f=520M Hz 100 80 6 2 0 0 450 460 470 480 490 500 510 520 530 f (MHz) 50 Ta=+25°C Vdd=3.6V Pin=0.5W Idq=250mA 8 60 4 100 ηd(%) 80 ηd(%) Pout(W) , Idd(A) 8 ηd 10 Pout(W) , Idd(A) Ta=+25°C Vdd=3.6V Pin=0.3W Idq=250mA f-Po CHARACTERISTICS @f=800-870MHz 100 ηd(%) f-Po CHARACTERISTICS @f=450-530MHz 10 25 0 30 0 0 5 10 15 20 Pin(dBm) 25 30 Application note : AN-900-041 The detail of this application is shown in application note. RD07MUS2B 23 Dec 2010 6/17 Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TYPICAL CHARACTERISTICS ( 380-430MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) Ta=+25°C f =380MHz Vdd=7.2V Idq=250mA 40 80 Po 30 60 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Pin-Po CHARACTERISTICS @f=380-430M Hz 50 100 ηｄ 20 40 Gp 10 20 Idd 0 0 0 5 10 15 20 Pin(dBm) 25 30 Po-ACP characteris tic 0 80 Ta=+25°C f=380MHz Vdd=7.2V Idq=250mA ACP (dBc) -20 60 ηd 40 Gain -30 20 ACP_1L -40 0 Gain (dB), ηd (%) -10 ACP_1H -50 -20 -60 -40 20 25 30 35 40 Po (dBm) The detail of this application is shown in application note(AN-UHF-105.) RD07MUS2B 23 Dec 2010 7/17 Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TEST CIRCUIT(f=135-175MHz) Vdd Vgg C2 C1 22uF,50V 21mmW W 21mm 3.5mm 1.5mm L5 (f=135-175MHz) RD07MUS2B 4.7K Ohm L4 4.5mm 5mm 5.5mm 3mm L1 100pF 9.5mm RF-in RF-out 7.5mm 1mm 100pF L2 L3 3mm 3.5mm 7.5mm 3mm 2.5mm 4.5mm 2.2 Ohm 56pF 100pF 22pF 22pF 43pF 20pF Note:Board material- Glass-Epoxy Substrate L1,L2 : 31.0nH, Enameled wire 6Turns,D:0.23mm,1.66mmO.D Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm L3,L5 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.66mmO.D L4 : 10.8nH, Enameled wire 4Turns,D:0.43mm,1.66mmO.D W:Line width=1.0mm C1,C2 : 1000pF,0.022uF in parallel TEST CIRCUIT(f=450-527MHz) Vdd Vgg C2 C1 22uF,50V 21mm W W 21mm (f=450-527MHz) RD07MUS2B 4.7K Ohm 4mm 10mm 4mm 5mm 5.5mm 1mm RF-in L1 L2 100pF 1mm RF-out 3mm 4.5mm 6mm 0.5mm 2.5mm 7.5mm 5.5mm 100pF 12pF 8pF 8pF 12pF 24pF 54pF 24pF 9pF 8pF Note:Board material- Glass-Epoxy Substrate L1 : 34.5nH, Enameled wire 5Turns,D:0.43mm,2.46mmO.D Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm L2 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.60mmO.D C1,C2 : 1000pF,0.022uF in parallel W:Line width=1.0mm RD07MUS2B 23 Dec 2010 8/17 Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W TEST CIRCUIT(f=763-870MHz) Vdd Vgg C2 C1 22uF,50V 21mm W W 21mm 10pF 4.7K Ohm 19mm 9mm 8pF (f=763-870MHz) RD07MUS2B L1 150pF 2.5mm 1mm 1.5mm RF-in RF-out 0.5mm 1mm 12mm 1mm 1mm 16.5mm 150pF 1pF 6pF 10pF 12pF 8pF 6pF 1pF L1 : 37.8nH, Enameled wire 7Turns,D:0.23mm,1.6mmO.D C1,C2 : 1000pF,100pF in parallel Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm RD07MUS2B 23 Dec 2010 9/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W Input / Output Impedance VS. Frequency Characteristics f=175MHz @Pin=0.3W, Vdd=7.2V, Idq=250mA(Vgg adj.) f=155MHz f Zout* (MHz) (ohm) 135 3.50-j5.54 155 2.57-j2.57 175 2.06+j0.62 f=135MHz Zo=10ohm Zout* ( f=135, 155, 175MHz) Zout*: Complex conjugate of output impedance @Pin=0.3W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zin* ( f=135, 155, 175MHz) Zo=10ohm f=175MHz f=155MHz f Zin* (MHz) (ohm) 135 5.58+j2.43 155 5.25+j5.60 175 5.01+j8.65 f=135MHz Zin*: Complex conjugate of input impedance RD07MUS2B 23 Dec 2010 10/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=450, 490, 520, 527MHz) @Pin=0.4W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zo=10ohm f (MHz) 450 490 520 527 Zout* (ohm) 2.80+j1.07 2.25+j0.75 1.51+j1.04 1.36+j1.20 f=527MHz f=450MHz f=520MHz f=485MHz Zout*: Complex conjugate of output impedance @Pin=0.4W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zin* ( f=450, 490, 520, 527MHz) Zo=10ohm f=520MHz f=527MHz f=490MHz f (MHz) 450 490 520 527 Zin* (ohm) 2.62+j2.02 2.90+j3.07 3.29+j3.70 3.40+j3.81 f=450MHz Zin*: Complex conjugate of input impedance RD07MUS2B 23 Dec 2010 11/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=763, 806, 817, 870MHz) @Pin=0.5W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zo=10ohm f (MHz) 763 806 817 870 f=817MHz f=763MHz Zout* (ohm) 2.01+j0.43 2.16+j0.80 2.17+j0.85 2.17+j1.07 f=870MHz f=806MHz Zout*: Complex conjugate of output impedance f=870MHz @Pin=0.5W, Vdd=7.2V, Idq=250mA(Vgg adj.) f=817MHz f=806MHz f=763MHz f (MHz) 763 806 817 870 Zin* (ohm) 1.72-j1.54 1.55-j0.50 1.46-j0.23 1.28+j0.95 Zo=10ohm Zin* ( f=763, 806, 817, 870MHz) Zin*: Complex conjugate of input impedance RD07MUS2B 23 Dec 2010 12/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W RD07MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=250mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.857 0.858 0.863 0.871 0.881 0.889 0.903 0.910 0.918 0.927 0.928 0.929 0.931 0.934 0.940 0.943 0.946 0.948 0.950 0.951 0.950 0.950 0.955 0.952 0.956 0.957 0.960 0.961 (ang) -170.8 -173.2 -173.7 -174.6 -175.4 -176.8 -178.1 -179.0 -180.0 178.8 177.7 177.2 177.2 176.7 175.6 174.4 173.5 172.6 172.3 171.5 171.7 171.3 170.8 170.6 170.0 169.2 168.4 167.7 167.1 S21 (mag) (ang) 10.060 79.2 7.300 73.1 6.509 70.7 5.435 66.9 4.687 63.5 3.556 56.7 2.791 51.2 2.261 45.7 1.861 40.9 1.559 36.7 1.320 33.0 1.236 31.5 1.212 31.2 1.130 29.5 0.974 26.5 0.848 23.4 0.745 20.9 0.660 18.6 0.638 18.0 0.587 16.5 0.578 16.3 0.563 15.8 0.522 14.5 0.502 13.8 0.471 12.9 0.427 11.1 0.387 9.7 0.353 8.1 0.323 6.9 RD07MUS2B S12 (mag) 0.016 0.016 0.015 0.015 0.014 0.013 0.013 0.011 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 S22 (ang) -9.1 -14.2 -15.2 -18.8 -23.8 -27.4 -32.8 -36.7 -39.7 -41.9 -44.9 -45.1 -44.2 -46.4 -46.4 -48.0 -46.0 -45.9 -44.9 -42.0 -45.4 -43.6 -41.8 -39.4 -33.7 -26.6 -17.3 -7.4 8.9 (mag) 0.745 0.759 0.763 0.773 0.781 0.806 0.825 0.843 0.859 0.874 0.888 0.893 0.894 0.896 0.909 0.915 0.921 0.928 0.931 0.931 0.931 0.933 0.934 0.935 0.941 0.943 0.943 0.949 0.949 (ang) -168.8 -169.5 -170.0 -170.7 -170.6 -171.0 -171.7 -172.4 -173.2 -173.9 -174.5 -174.8 -174.9 -175.4 -176.0 -176.5 -177.4 -177.8 -178.0 -178.3 -178.3 -178.6 -178.8 -178.9 -179.2 -179.5 179.9 179.7 179.6 23 Dec 2010 13/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W RD07MUS2B S-PARAMETER DATA (@Vdd=3.6V, Id=250mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.855 0.856 0.862 0.869 0.881 0.887 0.901 0.909 0.917 0.927 0.929 0.926 0.929 0.933 0.937 0.944 0.945 0.947 0.949 0.949 0.951 0.949 0.953 0.952 0.957 0.959 0.960 0.960 S21 (ang) -172.3 -174.2 -174.7 -175.3 -176.2 -177.4 -178.5 -179.5 179.6 178.6 177.5 177.0 176.9 176.4 175.3 174.2 173.4 172.5 172.2 171.6 171.5 171.4 170.8 170.5 169.9 169.2 168.2 167.7 167.0 (mag) 8.581 6.239 5.564 4.661 4.030 3.057 2.400 1.945 1.606 1.345 1.139 1.068 1.048 0.975 0.841 0.732 0.644 0.571 0.552 0.508 0.502 0.488 0.454 0.436 0.408 0.370 0.335 0.306 0.280 S12 (ang) 78.7 73.0 70.6 66.8 63.5 56.8 51.3 46.0 41.2 37.2 33.2 31.9 31.6 29.9 26.9 23.8 21.4 19.2 18.4 17.0 16.8 16.2 15.0 14.3 13.3 11.8 10.3 8.6 7.4 RD07MUS2B (mag) 0.016 0.016 0.016 0.015 0.015 0.014 0.013 0.012 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.003 0.003 0.003 0.003 0.002 0.002 0.002 S22 (ang) -9.3 -13.3 -17.3 -20.0 -23.1 -28.7 -32.8 -36.0 -40.7 -42.4 -45.0 -45.4 -44.5 -45.1 -47.2 -47.4 -46.7 -44.2 -44.2 -43.7 -42.8 -42.3 -40.8 -37.7 -32.1 -25.2 -18.0 -6.7 6.9 (mag) 0.782 0.793 0.797 0.806 0.812 0.831 0.849 0.863 0.877 0.890 0.902 0.904 0.907 0.909 0.918 0.925 0.931 0.935 0.939 0.938 0.938 0.940 0.941 0.940 0.946 0.949 0.949 0.955 0.954 (ang) -171.0 -171.6 -172.0 -172.5 -172.7 -173.0 -173.6 -174.3 -175.0 -175.5 -176.2 -176.3 -176.4 -176.9 -177.4 -178.0 -178.6 -179.0 -179.1 -179.3 -179.5 -179.6 -179.8 -180.0 179.8 179.5 179.0 178.8 178.7 23 Dec 2010 14/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W APPLICATION-NOTE Typical Characteristics Table (Application For Example) (These are only typical value and devices are not necessarily guaranteed at these values.) RD07MUS2B Single-stage amplifier for analog radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ AN-VHF-047 135 to 175MHz 7.2V 0.3W 7W 13.7ｄB 65% AN-VHF-046 170 to 205MHz 7.2V 0.3W 7W 13.7ｄB 70% AN-UHF-096 450 to 527MHz 7.2V 0.4W 7W 12.4dB 66% AN-UHF-098 400 to 470MHz 7.2V 0.4W 7W 12.5ｄB 60% AN-900-039 763 to 870MHz 7.2V 0.5W 6.5W 11.1dB 53% Single-stage amplifier for digital radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ ACP AN-UHF-105 380 to 430MHz 7.2V 0.03W 3W 19.7dB 35% -39ｄBc AN-UHF-106 350 to 400MHz 7.2V 0.03W 3W 19.5dB 32% -40dBc AN-900-041 800 to 870MHz 3.6V 0.04W 1W 12.2ｄB 32% -34dBc RD01MUS2 RD07MUS2B or RD01MUS1 2stage（RD07MUS2B with dirver PA) amplifier for analog radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ AN-VHF-053 135 to 175MHz 7.2V 0.03W 7.1W 23.7dB 47% AN-UHF-097 400 to 470MHz 7.2V 0.03W 7W 23.6ｄB 55% AN-UHF-115 450 to 530MHz 7.2V 0.03W 7.4W 23.9dB 45% AN-900-040 763 to 870MHz 7.2V 0.03W 7.2W 23.8ｄB 53% 2stage（RD07MUS2B with dirver PA) amplifier for digital radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ ACP AN-UHF-116 380 to 430MHz 7.2V 0.001W 3W 34.9dB 32% -39dBc RD07MUS2B 23 Dec 2010 15/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD07MUS2B 23 Dec 2010 16/17 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD07MUS2B 23 Dec 2010 17/17