ASI SD1407

SD1407
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1407 is a class AB
common Emitter Transistor Designed
for broadband amplifier operations up
to 30 MHz.
PACKAGE STYLE .500 4L FLG
FEATURES:
.112x45°
A
• PG = 15 dB min. at 125 W/30 MHz
• High linear power output
• IMD3 = -30 dBc max. at 125 W (PEP)
• Omnigold™ Metalization System
E
L
C
FULL R
Ø.125 NOM.
C
B
B
E
H
E
D
G
F
I J
MAXIMUM RATINGS
IC
VCBO
20 A
65 V
VCEO
36 V
VEBO
4.0 V
PDISS
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
E
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.65 °C/W
MAXIMUM
DIM
B
270 W @ TC = 25 °C
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
CHARACTERISTICS
L
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
K
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 100 mA
35
V
BVCES
IC = 100 mA
65
V
BVCBO
IC = 100 mA
65
BVEBO
IE = 10 mA
4.0
ICES
VCE = 30 V
hFE
VCE = 5.0 V
Cob
VCB = 30 V
GP
VCE = 28 V
IMD3
VCE = 28 V
IC = 5.0 A
V
10
f = 1.0 MHz
---
250
PIN = 3.95 W
f = 30 MHz
15
16
ICQ = 100 mA
f = 30 MHz
-34
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
15
mA
200
---
---
pF
dB
-30
dBc
REV. B
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