VISHAY 30ETH06FP-N3

New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Reduced Qrr and soft recovery
• 175 °C TJ maximum
• For PFC CRM/CCM operation
1
Cathode
• Fully isolated package (VINS = 2500 VRMS)
3
Anode
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
TO-220 FULL-PAK
• Designed
and
JEDEC-JESD47
qualified
according
to
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
TO-220FP
IF(AV)
30 A
VR
600 V
VF at IF
2.6 V
trr (typ.)
23 ns
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
TJ max.
175 °C
Diode variation
Single die
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 37 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
220
Operating junction and storage temperatures
TJ, TStg
A
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
2.00
2.60
IF = 30 A, TJ = 150 °C
-
1.34
1.75
VR = VR rated
-
0.3
50
TJ = 150 °C, VR = VR rated
-
60
500
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
33
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 16-Nov-11
μA
Document Number: 93403
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
IRRM
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
28
35
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
23
30
TJ = 25 °C
-
31
-
-
77
-
-
3.5
-
-
7.7
-
TJ = 125 °C
Peak recovery current
MIN.
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
65
-
TJ = 125 °C
-
345
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
2.85
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-
0.2
-
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Revision: 16-Nov-11
Case style TO-220 FULL-PAK
°C/W
-
2
-
g
-
0.07
-
oz.
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
30ETH06FP
Document Number: 93403
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
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Vishay Semiconductors
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
10
TJ = 175 °C
100
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
1000
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0001
1
0
0.5
1
1.5
2
3
2.5
0
3.5
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 16-Nov-11
Document Number: 93403
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
Vishay Semiconductors
180
90
160
80
140
70
120
100
80
60
50
40
30
40
20
Square wave (D = 0.50)
Rated VR applied
20
See note (1)
10
0
0
5
10
15
20
25
30
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
35
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
90
1200
RMS limit
80
1000
70
VR = 200 V
TJ = 125 °C
TJ = 25 °C
800
60
50
Qrr (nC)
Average Power Loss (W)
IF = 30 A
IF = 15 A
60
DC
trr (ns)
Allowable Case Temperature (°C)
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D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
30
20
10
600
IF = 30 A
IF = 15 A
400
200
DC
0
0
5
10
15
20
25
30
35
40
45
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 16-Nov-11
Document Number: 93403
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 16-Nov-11
Document Number: 93403
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-30ETH06FP-F3, VS-30ETH06FP-N3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
E
T
H
06
FP
-F3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (30 A)
3
-
E = Single diode
4
-
T = TO-220
5
-
H = Hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FULL-PAK
8
-
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30ETH06FP-F3
50
1000
Antistatic plastic tube
VS-30ETH06FP-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95005
Part marking information
www.vishay.com/doc?95440
Revision: 16-Nov-11
Document Number: 93403
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters
10.6
10.4
Hole Ø
3.4
3.1
2.8
2.6
3.7
3.2
7.31
6.91
16.0
15.8
16.4
15.4
10°
3.3
3.1
13.56
13.05
2.54 TYP.
0.9
0.7
0.61
0.38
2.54 TYP.
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
Revision: 20-Jul-11
5° ± 0.5°
1.4
1.3
2.85
2.65
1.15
TYP.
1.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95005
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000