Data Sheet PIN diode RN142S Dimensions (Unit : mm) Applications High frequency switching 0.12±0.05 0.8 0.6 0.8±0.05 Land size figure (Unit : mm) 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity. EMD2 Construction Silicon epitaxial planar 0.3±0.05 Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 0 8.0±0.15 0.6 1.25 1.3±0.06 0.06 0 0 2.40±0.05 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (DC) VR IF Forward current (DC) Pd Power dissipation Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 4.0±0.1 空ポケット Empty pocket Limits 2.0±0.05 0.76±0.05 0.75±0.05 Unit V mA mW °C °C 60 100 150 150 -55 to +150 Min. Typ. Max. Unit - - 1.00 V Conditions IF=10mA Reverse current Capacitance between terminals IR - - 0.1 μA VR=60V Ct - - 0.45 pF VR=1.0V , f=1MHz Forward resistance Rf www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. - - 3 Ω IF=3mA,f=100MHz - - 2 Ω IF=10mA,f=100MHz 1/2 2011.03 - Rev.D Data Sheet RN142S 100 1000 Ta=150℃ 100 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ 10 Ta=125℃ Ta=25℃ Ta=75℃ Ta=-25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Ta=-25℃ 0.1 0.01 0.01 0 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 0 80 1 100 FORWARD VOLTAGE:VF(mV) f=10MHz 10 f=100MHz 1 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 850 Ta=25℃ VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1 0.1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS FORWARD OPERATING RESISTANCE:rf(Ω) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=25℃ IF=10mA n=30pcs 840 830 820 810 AVE:825.4mV 0.1 1 10 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 7 VF DISPERSION MAP 2 6 5 4 3 AVE:0.4448nA 0.8 0.7 0.6 1.8 1.7 1.5 0.4 1.4 0.3 0.2 Ta=25℃ f=100MHz IF=3mA n=10pcs 1.9 1.6 0.5 1.3 1.2 AVE:0.364pF 1 0.1 1.1 0 0 1 IR DISPERSION MAP Ct DISPERSION MAP AVE:1.206Ω FORWARD CURRENT:IF(mA) rf DISPERSION MAP 5 Ta=25℃ f=100MHz IF=3mA n=10pcs 1.8 1.7 1.6 1.5 AVE:1.206Ω 1.3 1.2 1.1 1 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 2 1.9 FORWARD OPERATING RESISTANCE:rf(Ω) 1000 Ta=25℃ f=1MHz VR=1V n=10pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 8 1.4 10 100 FREQUENCY(MHz) Ct-f CHARACTERISTICS 1 Ta=25℃ VR=60V n=30pcs 9 2 800 FORWARD OPERATING RESISTANCE:rf(Ω) 0.1 0.1 4 2 AVE:0.71kV 1 0 FORWARD CURRENT:IF(mA) rf DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. AVE:2.01kV 3 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/2 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A