DIODES DZT955-13

DZT955
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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NEW PRODUCT
Features
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Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-223
Mechanical Data
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Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
Maximum Ratings
COLLECTOR
2,4
3 E
C 4
2 C
1
BASE
1 B
3
EMITTER
TOP VIEW
Schematic and Pin Configuration
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-6
V
IC
-4
A
ICM
-10
A
Symbol
Value
Unit
PD
1
W
RθJA
125
°C/W
Tj, TSTG
-55 to +150
°C
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31280 Rev. 2 - 2
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DZT955
© Diodes Incorporated
Electrical Characteristics
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-180
-140
-6
⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
Collector Cutoff Current
ICBO
⎯
⎯
-50
-1
nA
μA
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
⎯
⎯
-10
nA
⎯
⎯
⎯
⎯
⎯
⎯
100
100
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
-60
-120
-150
-370
-1110
-950
⎯
300
⎯
⎯
fT
⎯
150
⎯
MHz
Cobo
⎯
40
⎯
pF
ton
toff
⎯
⎯
85
430
⎯
⎯
ns
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
Test Condition
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -150V, IE = 0
VCB = -150V, IE = 0,
TA = 100°C
VEB = - 6V, IC = 0
B
IC = -100mA, IB = -5mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -3A, IB = -300mA
IC = -3A, VCE = -5V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
B
mV
B
B
B
mV
mV
⎯
B
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
Notes:
IC = -100mA, VCE = -10V,
f = 100MHz
VCB = -20V, f = 1MHz
IC = -1A, IB1 = -100mA
IB2 = 100mA, VCC = -50V
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
4.
0.8
1.0
IB = -5mA
-IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@TA = 25°C unless otherwise specified
0.8
0.6
0.4
0.2
0.6
IB = -4mA
IB = -3mA
0.4
IB = -2mA
0.2
IB = -1mA
0
0
25
50
150
100
125
75
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
DS31280 Rev. 2 - 2
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
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DZT955
© Diodes Incorporated
350
0.3
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
300
250
NEW PRODUCT
200
150
100
0.2
0.1
50
0.1
1
1.2
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
100
10
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
DS31280 Rev. 2 - 2
0
0.001
10
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0.01
fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0
0.001
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
200
150
VCE = -10V
f = 100MHz
100
50
0
20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
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DZT955
© Diodes Incorporated
Ordering Information (Note 5)
Device
DZT955-13
NEW PRODUCT
Notes:
5.
Packaging
SOT-223
Shipping
2500/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
YWW
P414
P414 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout: (Dimensions in mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31280 Rev. 2 - 2
4 of 4
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DZT955
© Diodes Incorporated