DIODES DMP2160UW

DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
NEW PRODUCT
•
•
•
•
•
•
•
•
Mechanical Data
•
•
Low On-Resistance
•
100 mΩ @ VGS = -4.5V
•
120 mΩ @ VGS = -2.5V
•
160 mΩ @ VGS = -1.8V
Very Low Gate Threshold Voltage VGS(th) ≤ 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
•
•
•
•
•
•
Drain
SOT-323
D
Gate
G
S
Source
TOP VIEW
Maximum Ratings
Internal Schematic
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Units
V
V
IDM
Value
-20
±12
-1.5
-1.2
-10
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Symbol
PD
RθJA
Value
350
360
Units
mW
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current
TA = 25°C
TA = 70°C
ID
A
A
Thermal Characteristics
Notes:
1.
2.
3.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
DMP2160UW
Document number: DS31521 Rev. 3 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP2160UW
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±100
±800
V
μA
-0.4
-0.6
-0.9
V
RDS (ON)
⎯
75
90
120
100
120
160
mΩ
gFS
VSD
⎯
⎯
4
⎯
⎯
-1.0
S
V
Ciss
Coss
Crss
⎯
⎯
⎯
627
64
53
⎯
⎯
⎯
pF
pF
pF
TJ = 25°C
IGSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
4.
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -1.5A
VGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1A
VDS = -10V, ID = -1.5A
VGS = 0V, IS = -1.0A
VDS = -10V, VGS = 0V
f = 1.0MHz
10
VDS = -5V
VGS = 3.0V
VGS = 3.0V
8
-ID, DRAIN CURRENT (A)
8
ID, DRAIN CURRENT (A)
nA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
Short duration pulse test used to minimize self-heating effect.
10
VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
6
4
VGS = 1.5V
2
6
4
TA = 150°C
2
TA = 125°C
TA = 85°C
TA = 25°C
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
5
TA = -55°C
0
0.5
1
1.5
2
2.5
-VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
1,200
1.6
f = 1MHz
VGS = 0V
1,000
1.4
VGS = -2.5V
ID = -2A
1.2
C, CAPACITANCE (pF)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
Gate-Source Leakage
Test Condition
VGS = -4.5V
ID = -4.5A
1.0
0.8
800
600
Ciss
400
200
0.6
-50
Document number: DS31521 Rev. 3 - 2
Crss
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance Variation with Temperature
DMP2160UW
Coss
2 of 4
www.diodes.com
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
20
November 2008
© Diodes Incorporated
DMP2160UW
10
0.9
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.8
0.7
ID = 1mA
0.6
0.5
ID = 250µA
0.4
8
6
4
T A = 25°C
2
0.3
0.2
-50
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
0
0.2 0.4 0.6 0.8
1
1.2
1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 6 Diode Forward Voltage vs. Current
1.6
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 338°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 7 Transient Thermal Response
Ordering Information
(Note 5)
Case
SOT-323
Part Number
DMP2160UW-7
Notes:
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMF
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
DMP2160UW
Document number: DS31521 Rev. 3 - 2
2009
W
Feb
2
Mar
3
YM
NEW PRODUCT
1
DMF = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2010
X
Apr
4
2011
Y
May
5
Jun
6
3 of 4
www.diodes.com
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
November 2008
© Diodes Incorporated
DMP2160UW
Package Outline Dimensions
A
B C
TOP VIEW
NEW PRODUCT
SOT-323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65
F
0.30
0.40 0.425
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
α
All Dimensions in mm
G
H
K
M
J
D
F
L
Suggested Pad Layout
Y
Z
C
X
E
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP2160UW
Document number: DS31521 Rev. 3 - 2
4 of 4
www.diodes.com
November 2008
© Diodes Incorporated