VISHAY 6CUT10-E

VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
I-PAK (TO-251AA)
D-PAK (TO-252AA)
Base
common
cathode
4
Base
common
cathode
4
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
1
Anode
2
Common
cathode
2
Common
1 cathode 3
Anode
Anode
3
Anode
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
VS-6CUT10-E
VS-6CWT10FN-E
• Specific for PV cells bypass diode
• High efficiency SMPS
PRODUCT SUMMARY
Package
D-PAK (TO-252AA),
I-PAK (TO-251AA)
IF(AV)
2x3A
VR
100 V
VF at IF
0.63 V
IRM max.
1 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
12 mJ
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VALUES
UNITS
100
VF
3 Apk, TJ = 125 °C (typical, per leg)
TJ
Range
V
0.6
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Document Number: 94662
Revision: 05-Jan-11
VR
TEST CONDITIONS
TJ = 25 °C
VS-6CUT10-E
VS-6CWT10FN-E
UNITS
100
V
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VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
per leg
Maximum average
forward current
IF(AV)
per device
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
6
Following any rated load
condition and with rated
VRRM applied
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 4 A, L = 1.5 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse.
See fig. 8
10 ms sine or 6 ms rect. pulse
UNITS
3
A
440
70
12
mJ
IAS at
TJ max.
A
TYP.
MAX.
UNITS
0.720
0.79
0.825
0.91
0.60
0.63
0.69
0.74
0.3
30
μA
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Forward voltage drop per leg
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
V
0.3
1
mA
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
114
-
pF
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/μs
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
TEST CONDITIONS
VALUES
UNITS
- 55 to 175
°C
4.7
RthJC
DC operation
0.3
RthCS
Approximate weight
Marking device
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2
°C/W
2.35
0.3
g
0.01
oz.
Case style I-PAK
6CUT10
Case style D-PAK
6CWT10FN
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94662
Revision: 05-Jan-11
VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
100
Vishay Semiconductors
10
10
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
175 °C
TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
150 °C
1
125 °C
100 °C
0.1
75 °C
0.01
50 °C
0.001
25 °C
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(Thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94662
Revision: 05-Jan-11
For technical questions within your region, please contact one of the following:
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VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay Semiconductors
2.5
175
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
DC
165
160
155
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
150
145
270°
180°
120°
90°
72°
2
DC
1.5
1
RMS limit
0.5
0
0
1
2
3
3
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge
Current (A)
1000
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94662
Revision: 05-Jan-11
VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay Semiconductors
Avalanche Current (A)
100
10
TJ = 25 °C
TJ = 125 °C
1
TJ = 175 °C
0.1
1
100
10
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
10
1
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94662
Revision: 05-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
6
C
U
T
10
FN
TRL
-E
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (2 x 3 A)
3
-
Circuit configuration:
C = Common cathode
4
-
Package:
U = I-PAK
W = D-PAK
5
-
T = Trench
6
-
Voltage rating (10 = 100 V)
7
-
TO-252AA (D-PAK)
8
-
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
Environmental digit:
-E = RoHS compliant and terminations lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95024
Part marking information
www.vishay.com/doc?95097
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94662
Revision: 05-Jan-11
Outline Dimensions
Vishay Semiconductors
I-PAK - S, D-PAK
DIMENSIONS FOR I-PAK - S in millimeters
E
A
b3
E1
c2
3
2
1
L
L5
L4
H
D
D1
4
b2
e
c
e
SYMBOL
DIMENSIONAL REQUIREMENTS
MIN.
NOM.
MAX.
E
6.40
6.60
6.70
L
3.98
4.13
4.28
L4
0.66
0.76
0.86
L5
1.96
2.16
2.36
D
6.00
6.10
6.20
H
11.05
11.25
11.45
b
0.64
0.76
0.88
b2
0.77
0.84
1.14
b3
5.21
5.34
5.46
b4
0.41
0.51
0.61
e
A
Document Number: 95024
Revision: 05-Jan-11
b3
b
2.286 BSC
2.20
2.30
2.38
c
0.40
0.50
0.60
c2
0.40
0.50
0.60
D1
5.30
-
-
E1
4.40
-
-
For technical questions within your region, please contact one of the following:
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Outline Dimensions
I-PAK - S, D-PAK
Vishay Semiconductors
DIMENSIONS FOR D-PAK in millimeters and inches
(5)
A
E
b3
(3)
Pad layout
C
A
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
2
b
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
MILLIMETERS
MIN.
1
A
c
b2
SYMBOL
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
INCHES
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.29 BSC
MAX.
L1
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
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For technical questions within your region, please contact one of the following:
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Document Number: 95024
Revision: 05-Jan-11
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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